Ralph Bray
Affiliations: | 1949-1989 | Purdue University, West Lafayette, IN, United States |
Area:
semiconductor physicsGoogle:
"Ralph Bray"Bio:
(1921 - 2006)
https://www.gf.org/fellows/all-fellows/ralph-bray/
http://www.physics.purdue.edu/docs/interactions/PhysicsInteractions_2006.pdf
https://www.aip.org/history-programs/niels-bohr-library/oral-histories/4533
https://docs.lib.purdue.edu/dissertations/AAI0014439/
DOI: 10.1103/PhysRev.76.152
Mean distance: (not calculated yet)
Parents
Sign in to add mentorKarl Lark-Horovitz | grad student | 1949 | Purdue | |
(The effects of electric field in germanium) |
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Publications
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Robertson WM, Moretti AL, Bray R. (1987) Surface-plasmon-enhanced Brillouin scattering on silver films: Double-resonance effect Physical Review B. 35: 8919-8928 |
Bray R, Wan K, Parker JC. (1986) Insights into metastable defects in semi-insulating GaAs from electronic Raman studies of nonequilibrium holes Physical Review Letters. 57: 2434-2437 |
Moretti AL, Robertson WM, Fisher B, et al. (1985) Surface-enhanced Brillouin scattering on silver films Physical Review B. 31: 3361-3368 |
Wan K, Bray R. (1985) Electronic Raman spectra of shallow acceptors in semi-insulating GaAs Physical Review B. 32: 5265-5272 |
Bray R, Wan K. (1985) Electronic Raman scattering by compensated shallow acceptors in semi-insulating GaAs Solid State Communications. 53: 1149-1149 |
Bray R, Wan K. (1985) Raman probe studies of Nd: YAlG laser generated non-equilibrium excitations in GaAs Journal of Luminescence. 30: 375-394 |
Chapman LD, Colella R, Bray R. (1983) X-ray-diffraction studies of acoustoelectrically amplified phonons Physical Review B. 27: 2264-2277 |
Tsen K, Abramsohn DA, Bray R. (1983) Raman probe of the large wavevector TA phonon bottleneck in GaAs Physica B-Condensed Matter. 543-545 |
Tsen K, Bray R. (1983) Collision-narrowing of Raman spectrum for spin-density fluctuations of electrons in n-GaAs Solid State Communications. 45: 685-687 |
Abramsohn DA, Tsen K, Bray R. (1982) Critical evaluation of the light-scattering spectrum for single-particle excitations in n-GaAs at 300 K Physical Review B. 26: 6571-6587 |