Taimur Ahmed
Affiliations: | 2014-2018 | School of Electronic Engineering | Royal Melbourne Institute of Technology (Australia) |
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Sign in to add mentorOmid Kavehei | grad student | 2014-2018 | Royal Melbourne Institute of Technology (Australia) |
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Publications
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Ahmed T, Tahir M, Low MX, et al. (2020) Fully Light-Controlled Memory and Neuromorphic Computation in Layered Black Phosphorus. Advanced Materials (Deerfield Beach, Fla.). e2004207 |
Rahman MA, Tawfik SA, Ahmed T, et al. (2020) Differential work-function enabled bifunctional switching in strontium titanate flexible resistive memories. Acs Applied Materials & Interfaces |
Ahmed T, Walia S, Mayes ELH, et al. (2019) Time and rate dependent synaptic learning in neuro-mimicking resistive memories. Scientific Reports. 9: 15404 |
Ahmed T, Kuriakose S, Mayes ELH, et al. (2019) Optically Stimulated Artificial Synapse Based on Layered Black Phosphorus. Small (Weinheim An Der Bergstrasse, Germany). e1900966 |
Kim J, Nili H, Truong ND, et al. (2019) Nano-Intrinsic True Random Number Generation: A Device to Data Study Ieee Transactions On Circuits and Systems I: Regular Papers. 66: 2615-2626 |
Nirantar S, Ahmed T, Bhaskaran M, et al. (2019) Electron Emission Devices for Energy‐Efficient Systems Advanced Intelligent Systems. 1: 1900039 |
Nirantar S, Mayes E, Rahman MA, et al. (2019) In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a ‐VO x Asymmetric Crossbars Advanced Electronic Materials. 5: 1900605 |
Nirantar S, Ahmed T, Ren G, et al. (2018) Metal-Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics. Nano Letters |
Ahmed T, Walia S, Mayes ELH, et al. (2018) Data related to the nanoscale structural and compositional evolution in resistance change memories. Data in Brief. 21: 18-24 |
Rahman F, Ahmed T, Walia S, et al. (2018) Reversible resistive switching behaviour in CVD grown, large area MoO. Nanoscale |