| Year |
Citation |
Score |
| 2020 |
Hsiao FC, Liang CT, Chang YC, Dallesasse JM. Effective bond-orbital model of III-nitride wurtzite structures based on modified interaction parameters of zinc-blende structures Computer Physics Communications. 252: 107139. DOI: 10.1016/J.Cpc.2020.107139 |
0.311 |
|
| 2019 |
Carlson JA, Williams CG, Ganjoo M, Dallesasse JM. Epitaxial bonding and transfer processes for large-scale heterogeneously integrated electronic-photonic circuitry Journal of the Electrochemical Society. 166. DOI: 10.1149/2.0201901Jes |
0.536 |
|
| 2018 |
Su P, Hsiao F, O'Brien T, Dallesasse JM. Wafer-Scale Method of Controlling Impurity-Induced Disordering for Optical Mode Engineering in High-Performance VCSELs Ieee Transactions On Semiconductor Manufacturing. 31: 447-453. DOI: 10.1109/Tsm.2018.2866065 |
0.337 |
|
| 2018 |
Chen K, Hsiao FC, Joy B, Dallesasse JM. Control of radiative base recombination in the quantum cascade light-emitting transistor using quantum state overlap Applied Physics B. 124: 129. DOI: 10.1007/S00340-018-6985-Y |
0.389 |
|
| 2017 |
O'Brien TR, Kesler B, Dallesasse JM. Transverse mode selection in vertical-cavity surface-emitting lasers via deep impurity-induced disordering Proceedings of Spie. 10122. DOI: 10.1117/12.2253396 |
0.359 |
|
| 2017 |
Kesler B, O'Brien T, Dallesasse JM. Transverse mode control in proton-implanted and oxide-confined VCSELs via patterned dielectric anti-phase filters Proceedings of Spie. 10122. DOI: 10.1117/12.2253300 |
0.331 |
|
| 2017 |
Chen K, Hsiao FC, Joy B, Dallesasse JM. Quantum structures for recombination control in the light-emitting transistor Proceedings of Spie. 10123: 1012318. DOI: 10.1117/12.2252796 |
0.406 |
|
| 2017 |
O'Brien T, Kesler B, Mulla SA, Dallesasse JM. Mode Behavior of VCSELs With Impurity-Induced Disordering Ieee Photonics Technology Letters. 29: 1179-1182. DOI: 10.1109/Lpt.2017.2701647 |
0.322 |
|
| 2017 |
Frost T, Su G, Hazari A, Dallesasse JM, Bhattacharya P. Red and Near-Infrared III-Nitride Quantum Dot Lasers Ieee Journal of Selected Topics in Quantum Electronics. 23: 1-9. DOI: 10.1109/Jstqe.2017.2754368 |
0.419 |
|
| 2017 |
Hazari A, Hsiao FC, Yan L, Heo J, Millunchick JM, Dallesasse JM, Bhattacharya P. $1.3~\mu $ m Optical Interconnect on Silicon: A Monolithic III-Nitride Nanowire Photonic Integrated Circuit Ieee Journal of Quantum Electronics. 53: 1-9. DOI: 10.1109/Jqe.2017.2708526 |
0.448 |
|
| 2017 |
Lin Z, Chen K, Hsiao FC, Wang Z, Dallesasse JM, Leburton JP. Modeling of the electrically-tunable transistor-injected quantum cascade laser Journal of Applied Physics. 122: 235701. DOI: 10.1063/1.4999751 |
0.383 |
|
| 2016 |
Kesler B, O'Brien T, Su GL, Dallesasse JM. Facilitating Single-Transverse-Mode Lasing in VCSELs via Patterned Dielectric Anti-Phase Filters Ieee Photonics Technology Letters. 28: 1497-1500. DOI: 10.1109/Lpt.2016.2555294 |
0.349 |
|
| 2015 |
Su GL, Frost T, Bhattacharya P, Dallesasse JM. Physical model for high indium content InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red wavelengths (λ ~ 630 nm). Optics Express. 23: 12850-65. PMID 26074539 DOI: 10.1364/Oe.23.012850 |
0.407 |
|
| 2015 |
Dallesasse J, Kesler B, O'Brien T, Su GL, Carlson J. Hybrid Photonic Integration Frontiers in Optics. DOI: 10.1364/Fio.2015.Fth4B.2 |
0.326 |
|
| 2014 |
Su GL, Frost T, Bhattacharya P, Dallesasse JM, Chuang SL. Detailed model for the In0.18Ga0.82N/GaN self-assembled quantum dot active material for λ = 420 nm emission. Optics Express. 22: 22716-29. PMID 25321741 DOI: 10.1364/Oe.22.022716 |
0.349 |
|
| 2014 |
Creazzo T, Marchena E, Krasulick SB, Yu PKL, Van Orden D, Spann JY, Blivin CC, He L, Cai H, Dallesasse JM, Stone RJ, Mizrahi A. Composite-CMOS integrated photonics for high bandwidth WDM optical interconnects Proceedings of Spie - the International Society For Optical Engineering. 8991. DOI: 10.1117/12.2044277 |
0.376 |
|
| 2014 |
Bambery R, Wang C, Dallesasse JM, Feng M, Holonyak N. Effect of the energy barrier in the base of the transistor laser on the recombination lifetime Applied Physics Letters. 104: 81117. DOI: 10.1063/1.4866778 |
0.305 |
|
| 2013 |
Creazzo T, Marchena E, Krasulick SB, Yu PK, Van Orden D, Spann JY, Blivin CC, He L, Cai H, Dallesasse JM, Stone RJ, Mizrahi A. Integrated tunable CMOS laser. Optics Express. 21: 28048-53. PMID 24514318 DOI: 10.1364/Oe.21.028048 |
0.392 |
|
| 2013 |
Bambery R, Tan F, Feng M, Dallesasse JM, Holonyak N. Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature Ieee Photonics Technology Letters. 25: 859-862. DOI: 10.1109/Lpt.2013.2252887 |
0.333 |
|
| 2013 |
Dallesasse JM, Holonyak N. Oxidation of Al-bearing III-V materials: A review of key progress Journal of Applied Physics. 113: 51101. DOI: 10.1063/1.4769968 |
0.38 |
|
| 1994 |
Busta H, Dallesasse J, Smith S, Pogemiller J, Zimmerman B, Mathius R. Light emission from an AlGaAs single-quantum-well heterostructure by electron excitation from a micromachined field emitter source Journal of Micromechanics and Microengineering. 4: 55-59. DOI: 10.1088/0960-1317/4/2/002 |
0.375 |
|
| 1993 |
Papen GC, Murphy GM, Brady DJ, Howe AT, Dallesasse JM, Dejule RY, Holmgren DJ. Multiple-wavelength operation of a laser-diode array coupled to an external cavity. Optics Letters. 18: 1441-3. PMID 19823408 DOI: 10.1364/Ol.18.001441 |
0.338 |
|
| 1992 |
Maranowski SA, Kish FA, Caracci SJ, Holonyak N, Dallesasse JM, Bour DP, Treat DW. Native‐oxide defined In0.5(AlxGa1−x)0.5P quantum well heterostructure window lasers (660 nm) Applied Physics Letters. 61: 1688-1690. DOI: 10.1063/1.108452 |
0.402 |
|
| 1992 |
Kish FA, Caracci SJ, Holonyak N, Hsieh KC, Baker JE, Maranowski SA, Sugg AR, Dallesasse JM, Fletcher RM, Kuo CP, Osentowski TD, Craford MG. Properties and use on In 0.5 (Al x Ga 1-x ) 0.5 P and Al x Ga 1-x As native oxides in heterostructure lasers Journal of Electronic Materials. 21: 1133-1139. DOI: 10.1007/Bf02667606 |
0.314 |
|
| 1991 |
El-Zein N, Holonyak N, Kish FA, Sugg AR, Richard TA, Dallesasse JM, Smith SC, Burnham RD. Native-oxide-masked Si impurity-induced layer disordering of AlxGa1−xAs-AlyGa1−yAs-AlzGa1−zAs quantum-well heterostructures Journal of Applied Physics. 70: 2031-2034. DOI: 10.1063/1.350354 |
0.382 |
|
| 1991 |
Kish FA, Caracci SJ, Holonyak N, Dallesasse JM, Hsieh KC, Ries MJ. Planar native‐oxide index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers Applied Physics Letters. 59: 1755-1757. DOI: 10.1063/1.106240 |
0.415 |
|
| 1991 |
Kish FA, Caracci SJ, Holonyak N, Dallesasse JM, Sugg AR, Fletcher RM, Kuo CP, Osentowski TD, Craford MG. Native‐oxide stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P heterostructure laser diodes Applied Physics Letters. 59: 354-356. DOI: 10.1063/1.105593 |
0.329 |
|
| 1991 |
Sugg AR, Holonyak N, Baker JE, Kish FA, Dallesasse JM. Native oxide stabilization of AlAs‐GaAs heterostructures Applied Physics Letters. 58: 1199-1201. DOI: 10.1063/1.105213 |
0.309 |
|
| 1991 |
Dallesasse JM, Holonyak N. Native‐oxide stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers Applied Physics Letters. 58: 394-396. DOI: 10.1063/1.104645 |
0.426 |
|
| 1991 |
Dallesasse JM, Holonyak N, Hall DC, El-Zein N, Sugg AR, Smith SC, Burnham RD. Native-oxide-defined coupled-stripe AlxGa1-xAs-GaAs quantum well heterostructure lasers Applied Physics Letters. 58: 834-836. DOI: 10.1063/1.104504 |
0.42 |
|
| 1991 |
Dallesasse JM, Holonyak N, El‐Zein N, Richard TA, Kish FA, Sugg AR, Burnham RD, Smith SC. Native‐oxide masked impurity‐induced layer disordering of AlxGa1−xAs quantum well heterostructures Applied Physics Letters. 58: 974-976. DOI: 10.1063/1.104460 |
0.401 |
|
| 1990 |
Dallesasse JM, El-Zein N, Holonyak N, Fletcher RM, Kuo CP, Osentowski TD, Craford MG. Hydrogenation-Defined Stripe-Geometry In0.5(Alxga1-X)0.5P Quantum-Well Lasers Journal of Applied Physics. 68: 5871-5873. DOI: 10.1063/1.346962 |
0.409 |
|
| 1990 |
Dallesasse JM, Szafranek I, Baillargeon JN, El‐Zein N, Holonyak N, Stillman GE, Cheng KY. Hydrogenation of Si- and Be-doped InGaP Journal of Applied Physics. 68: 5866-5870. DOI: 10.1063/1.346961 |
0.589 |
|
| 1990 |
Dallesasse JM, El-Zein N, Holonyak N, Hsieh KC, Burnham RD, Dupuis RD. Environmental degradation of AlxGa1−xAs‐GaAs quantum‐well heterostructures Journal of Applied Physics. 68: 2235-2238. DOI: 10.1063/1.346527 |
0.519 |
|
| 1990 |
Dallesasse JM, Holonyak N, Sugg AR, Richard TA, El‐Zein N. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices Applied Physics Letters. 57: 2844-2846. DOI: 10.1063/1.103759 |
0.368 |
|
| 1990 |
Dallesasse JM, Gavrilovic P, Holonyak N, Kaliski RW, Nam DW, Vesely EJ, Burnham RD. Stability of AlAs in AlxGa1-xAs-AlAs-GaAs quantum well heterostructures Applied Physics Letters. 56: 2436-2438. DOI: 10.1063/1.102902 |
0.357 |
|
| 1989 |
Dallesasse JM, Plano WE, Nam DW, Hsieh KC, Baker JE, Holonyak N, Kuo CP, Fletcher RM, Osentowski TD, Craford MG. Impurity-induced layer disordering in In0.5(Alx Ga1-x)0.5P-InGaP quantum-well heterostructures: Visible-spectrum-buried heterostructure lasers Journal of Applied Physics. 66: 482-487. DOI: 10.1063/1.343562 |
0.451 |
|
| 1988 |
Deppe DG, Plano WE, Dallesasse JM, Hall DC, Guido LJ, Holonyak N. Buried heterostructure AlxGa1-xAs-GaAs quantum well lasers by Ge diffusion from the vapor Applied Physics Letters. 52: 825-827. DOI: 10.1063/1.99296 |
0.673 |
|
| 1988 |
Deppe DG, Holonyak N, Plano WE, Robbins VM, Dallesasse JM, Hsieh KC, Baker JE. Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures Journal of Applied Physics. 64: 1838-1844. DOI: 10.1063/1.341759 |
0.541 |
|
| 1988 |
Dallesasse JM, Nam DW, Deppe DG, Holonyak N, Fletcher RM, Kuo CP, Osentowski TD, Craford MG. Short-wavelength (≲6400 Å) room-temperature continuous operation of p-n In0.5(AlxGa1-x)0.5P quantum well lasers Applied Physics Letters. 53: 1826-1828. DOI: 10.1063/1.100388 |
0.534 |
|
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