Kenneth E. Gonsalves
Affiliations: | 2001-2011 | Chemistry | University of North Carolina, Charlotte, Charlotte, NC, United States |
| 2012- | Indian Institute of Technology Mandi |
Area:
Polymer chemistryWebsite:
http://opticscenter.uncc.edu/kenneth-e-gonsalves-ph-dGoogle:
"Kenneth Emmanuel Gonsalves"Bio:
http://www.iitmandi.ac.in/news/articles/profken.html
https://www.linkedin.com/pub/ken-gonsalves/45/197/7b0
Mean distance: 6.65 | S | N | B | C | P |
Parents
Sign in to add mentor| Marvin D. Rausch | grad student | 1985 | U Mass Amherst | |
| (Cationic and condensation polymerization of organometallic monomers) | ||||
| George M. Whitesides | research scientist | 1997 | Harvard | |
| (Visiting Scholar) | ||||
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Publications
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| Satyanarayana VS, Kessler F, Singh V, et al. (2014) Radiation-sensitive novel polymeric resist materials: iterative synthesis and their EUV fragmentation studies. Acs Applied Materials & Interfaces. 6: 4223-32 |
| Satyanarayana VSV, Singh V, Kalyani V, et al. (2014) A hybrid polymeric material bearing a ferrocene-based pendant organometallic functionality: Synthesis and applications in nanopatterning using EUV lithography Rsc Advances. 4: 59817-59820 |
| Gonsalves KE, Wang M, Lee CT, et al. (2009) Novel chemically amplified resists incorporating anionic photoacid generator functional groups for sub-50-nm half-pitch lithography Journal of Materials Chemistry. 19: 2797-2802 |
| Wang M, Lee CT, Henderson CL, et al. (2008) Fullerene grafted photoacid generator(PAG) bound polymer resists Journal of Photopolymer Science and Technology. 21: 747-751 |
| Gonsalves KE, Wang M, Pujari NS. (2008) High refractive-index resists composed of anionic photoacid generator (PAG) bound polymers for 193 nm immersion lithography Proceedings of Spie - the International Society For Optical Engineering. 6923 |
| Wang M, Lee CT, Henderson CL, et al. (2008) Synthesis and properties of new anionic photoacid generators bound polymer resists for e-beam and EUV lithography Proceedings of Spie - the International Society For Optical Engineering. 6923 |
| Wang M, Lee CT, Henderson CL, et al. (2008) Incorporation of ionic photoacid generator (PAG) and base quencher into the resist polymer main chain for sub-50 nm resolution patterning Journal of Materials Chemistry. 18: 2704-2708 |
| Lee CT, Henderson CL, Wang M, et al. (2008) The effect of direct PAG incorporation into the polymer main chain on reactive ion etch resistance of 193 nm and EUV chemically amplified resists Microelectronic Engineering. 85: 963-965 |
| Wang M, Yueh W, Gonsalves KE. (2008) Fluorine-contained photoacid generators (PAGs) and corresponding polymer resists Journal of Fluorine Chemistry. 129: 607-612 |
| Wang M, Tang M, Her TH, et al. (2007) Synthesis, characterization and lithography performance of novel anionic photoacid generator (PAG) bound polymers Journal of Photopolymer Science and Technology. 20: 793-797 |