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Hong Wu, Ph.D.

Affiliations: 
2003 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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"Hong Wu"
Mean distance: 16.2
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Lester F. Eastman grad student 2003 Cornell
 (Design and fabrication of gallium nitride/silicon carbide heterojunction bipolar transistors.)

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Publications

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Hofstetter D, Baumann E, Giorgetta FR, et al. (2009) Photodetectors based on intersubband transitions using III-nitride superlattice structures. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 174208
Wang Z, Reimann K, Woerner M, et al. (2006) Ultrafast hole burning in intersubband absorption lines of GaN/AlN superlattices Applied Physics Letters. 89
Cha HOY, Chen X, Wu H, et al. (2006) Ohmic contact using the Si nano-interiayer for undoped-AIGaN/GaN heterostructures Journal of Electronic Materials. 35: 406-410
Baumann E, Giorgetta FR, Hofstetter D, et al. (2005) Tunneling effects and intersubband absorption in AlN/GaN superlattices Applied Physics Letters. 86: 1-3
Baumann E, Giorgetta FR, Hofstetter D, et al. (2005) Resonant tunnelling and intersubband absorption in AlN - GaN superlattices Physica Status Solidi C: Conferences. 2: 1014-1018
Furis M, Cartwright AN, Wu H, et al. (2003) Emission Mechanisms in UV Emitting GaN/AlN Multiple Quantum Well Structures Mrs Proceedings. 798
Furis M, Cartwright AN, Wu H, et al. (2003) Room-temperature ultraviolet emission from GaN/AlN multiple-quantum-well heterostructures Applied Physics Letters. 83: 3486-3488
Mkhoyan KA, Silcox J, Wu H, et al. (2003) Nonuniformities in GaN/AlN quantum wells Applied Physics Letters. 83: 2668-2670
Hofstetter D, Schad SS, Wu H, et al. (2003) GaN/AlN-based quantum-well infrared photodetector for 1.55 μm Applied Physics Letters. 83: 572-574
Wu H, Schaff WJ, Koley G, et al. (2002) Molecular Beam Epitaxial Growth of AlN/GaN Multiple Quantum Wells Mrs Proceedings. 743: 375-380
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