Bei Li, Ph.D.
Affiliations: | 2010 | Electrical Engineering | University of California, Riverside, Riverside, CA, United States |
Area:
learning and memoryGoogle:
"Bei Li"Mean distance: 16.73 (cluster 6) | S | N | B | C | P |
Parents
Sign in to add mentor| li Liu | grad student | 2010 | UC Riverside | |
| (Novel nonvolatile memories with engineered nanocrystal floating gate.) | ||||
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Publications
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| Ren J, Li B, Zheng JG, et al. (2012) Nonplanar NiSi nanocrystal floating-gate memory based on a triangular-shaped Si nanowire array for extending nanocrystal memory scaling limit Ieee Electron Device Letters. 33: 1390-1392 |
| Ren J, Li B, Zheng JG, et al. (2012) High-density NiSi nanocrystals embedded in Al 2O 3/SiO 2 double-barrier for robust retention of nonvolatile memory Solid-State Electronics. 67: 23-26 |
| Li B, Liu J, Gann RD, et al. (2011) Vapor-solid-solid growth of NiSi |
| Zhou H, Li B, Yang Z, et al. (2011) TiSi2 nanocrystal metal oxide semiconductor field effect transistor memory Ieee Transactions On Nanotechnology. 10: 499-505 |
| Li B, Liu J. (2011) Nonvolatile Memory With Ge/Si Heteronanocrystals as Floating Gate Ieee Transactions On Nanotechnology. 10: 284-290 |
| Li B, Ren J, Liu J. (2010) Synthesis of high-density PtSi nanocrystals for memory application Applied Physics Letters. 96 |
| Li B, Liu J. (2010) Self-assembled Ge/Si hetero-nanocrystals for nonvolatile memory application Thin Solid Films. 518 |
| Li B, Liu J. (2009) VSS-induced NiSi 2 Nanocrystal Memory Mrs Proceedings. 1160 |
| Li B, Ren J, Liu J. (2009) Pt-induced high density PtSi nanocrystals and their application in nonvolatile memory 2009 International Semiconductor Device Research Symposium, Isdrs '09 |
| Zhu Y, Li B, Liu J. (2007) Self-aligned TiSi2/Si Hetero-nanocrystal Nonvolatile Memory Mrs Proceedings. 997 |