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Jieying Kong, Ph.D.

Affiliations: 
2012 Electrical Engineering University of California, Riverside, Riverside, CA, United States 
Area:
learning and memory
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"Jieying Kong"
Mean distance: 16.73 (cluster 6)
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li Liu grad student 2012 UC Riverside
 (Development of Zinc Oxide Based Light Emitting Diodes and Laser Diodes.)

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Publications

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Kong J, Chu S, Huang J, et al. (2013) Use of distributed Bragg reflectors to enhance Fabry-Pérot lasing in vertically aligned ZnO nanowires Applied Physics a: Materials Science and Processing. 110: 23-28
Huang J, Chu S, Kong J, et al. (2013) ZnO p-n Homojunction Random Laser Diode Based on Nitrogen-Doped p-type Nanowires Advanced Optical Materials. 1: 179-185
Zuo Z, Zhou H, Olmedo MJ, et al. (2012) Strong room-temperature ferromagnetism of high-quality lightly Mn-doped ZnO grown by molecular beam epitaxy Journal of Applied Physics. 112
Kong J, Chu S, Zuo Z, et al. (2012) Low-threshold ZnO random lasing in a homojunction diode with embedded double heterostructure Applied Physics a: Materials Science and Processing. 107: 971-975
Chu S, Wang G, Zhou W, et al. (2011) Electrically pumped waveguide lasing from ZnO nanowires. Nature Nanotechnology. 6: 506-10
Chu S, Zhao J, Zuo Z, et al. (2011) Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode Journal of Applied Physics. 109
Yang Z, Chu S, Chen WV, et al. (2010) ZnO:Sb/ZnO:Ga light emitting diode on c-plane sapphire by molecular beam epitaxy Applied Physics Express. 3
Kong J, Li L, Yang Z, et al. (2010) Ultraviolet light emissions in MgZnO/ZnO double heterojunction diodes by molecular beam epitaxy Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28
Chu S, Olmedo M, Yang Z, et al. (2008) Electrically pumped ultraviolet ZnO diode lasers on Si Applied Physics Letters. 93
Kong J, Chu S, Olmedo M, et al. (2008) Dominant ultraviolet light emissions in packed ZnO columnar homojunction diodes Applied Physics Letters. 93
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