Sheyum G. Syed, Ph.D.
Affiliations: | 2004 | Columbia University, New York, NY |
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"Sheyum Syed"Mean distance: 15.1 | S | N | B | C | P |
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Sign in to add mentor| Horst L. Störmer | grad student | 2004 | Columbia | |
| (Transport parameters of electrons at the interface of gallium nitride and aluminum gallium nitride.) | ||||
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| Henriksen EA, Syed S, Wang YJ, et al. (2006) Disorder-mediated splitting of the cyclotron resonance in two-dimensional electron systems Physical Review B - Condensed Matter and Materials Physics. 73 |
| Henriksen EA, Syed S, Wang YJ, et al. (2006) Splitting of the cyclotron resonance in two-dimensional electron systems Physica E: Low-Dimensional Systems and Nanostructures. 34: 318-320 |
| Henriksen EA, Syed S, Ahmadian Y, et al. (2005) Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field-effect transistor Applied Physics Letters. 86: 1-3 |
| Syed S, Wang YJ, Stormer HL, et al. (2004) Large cyclotron-resonance line splitting of two-dimensional electrons in AlGaN/GaN and AlGaAs/GaAs heterostructures International Journal of Modern Physics B. 18: 3761-3768 |
| Syed S, Manfra MJ, Wang YJ, et al. (2004) Electron scattering in AlGaN/GaN structures Applied Physics Letters. 84: 1507-1509 |
| Syed S, Manfra MJ, Wang YJ, et al. (2003) Large splitting of the cyclotron-resonance line inAlxGa1−xN/GaNheterostructures Physical Review B. 67 |
| Syed S, Heroux JB, Wang YJ, et al. (2003) Nonparabolicity of the conduction band of wurtzite GaN Applied Physics Letters. 83: 4553-4555 |
| Manfra MJ, Weimann NG, Hsu JWP, et al. (2002) High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy Journal of Applied Physics. 92: 338-345 |
| Jurkovic MJ, Li L, Turk B, et al. (2000) High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer Mrs Internet Journal of Nitride Semiconductor Research. 5: 459-466 |
| Li LK, Turk B, Wang WI, et al. (2000) Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1472-1475 |