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Nutan Gautam, Ph.D.

Affiliations: 
2012 Electrical Engineering University of New Mexico, Albuquerque, NM, United States 
Area:
Infrared imaging
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Parents

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Sanjay Krishna grad student 2012 Univ. of New Mexico
 (Unipolar Barrier Strained Layer Superlattice Infrared Photodiodes: Physics and Barrier Engineering.)

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Publications

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Das S, Das U, Gautam N, et al. (2016) Type-II InAs/GaSb photodiode array pixel isolation by femto-second laser anneal Infrared Physics and Technology. 78: 162-166
Das S, Das U, Gautam N, et al. (2015) Pixel isolation in Type-II InAs/GaSb superlattice photodiodes by femto-second laser annealing Proceedings of Spie - the International Society For Optical Engineering. 9516
Gopal V, Gautam N, Plis E, et al. (2015) Modelling of current-voltage characteristics of infrared photo-detectors based on type - II InAs/GaSb super-lattice diodes with unipolar blocking layers Aip Advances. 5
Klein B, Gautam N, Plis E, et al. (2014) Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32
Tian ZB, DeCuir EA, Gautam N, et al. (2013) Hetero-engineering infrared detectors with type-II superlattices Proceedings of Spie - the International Society For Optical Engineering. 8868
Tian Z, Eric AD, Priyalal SW, et al. (2013) Low dark current structures for long-wavelength Type-II strained layer superlattice photodiodes Proceedings of Spie - the International Society For Optical Engineering. 8704
Plis E, Klein B, Myers S, et al. (2013) Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31
Plis E, Klein B, Myers S, et al. (2013) High operating temperature midwave infrared InAs/GaSb superlattice photodetectors on (111) GaSb substrates Ieee Electron Device Letters. 34: 426-428
Gautam N, Myers S, Barve AV, et al. (2013) Barrier engineered infrared photodetectors based on type-ii inas/gasb strained layer superlattices Ieee Journal of Quantum Electronics. 49: 211-217
Gautam N, Myers S, Barve AV, et al. (2013) Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices Infrared Physics and Technology. 59: 72-77
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