Sansaptak Dasgupta, Ph.D.
Affiliations: | 2011 | Electrical & Computer Engineering | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Sansaptak Dasgupta"Parents
Sign in to add mentor| Umesh Mishra | grad student | 2011 | UC Santa Barbara | |
| (Growth, Fabrication and Characterization of III-Nitride Hot Electron Transistors.) | ||||
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Publications
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| Devabharathi N, Mondal SK, Dasgupta S. (2019) Inkjet-printed co-continuous mesoporous oxides for high-current power transistors. Nanoscale |
| Garlapati SK, Marques GC, Gebauer J, et al. (2018) High performance printed oxide field-effect transistors processed using photonic curing. Nanotechnology |
| Dasgupta S, Lu J, Nidhi, et al. (2013) Estimation of hot electron relaxation time in GaN using hot electron transistors Applied Physics Express. 6 |
| Dasgupta S, Nidhi, Wu F, et al. (2012) Growth and characterization of n-polar GaN films on Si(111) by plasma assisted molecular beam epitaxy Japanese Journal of Applied Physics. 51 |
| Nidhi, Dasgupta S, Lu J, et al. (2012) Scaled self-aligned N-Polar GaN/AlGaN MIS-HEMTs with f T of 275 GHz Ieee Electron Device Letters. 33: 961-963 |
| Denninghoff DJ, Dasgupta S, Lu J, et al. (2012) Design of high-aspect-ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High f max Ieee Electron Device Letters. 33: 785-787 |
| Nidhi, Dasgupta S, Lu J, et al. (2012) Self-aligned N-Polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm Ieee Electron Device Letters. 33: 794-796 |
| Dasgupta S, Nidhi, Choi S, et al. (2011) Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy Applied Physics Express. 4: 45502 |
| Singisetti U, Wong MH, Dasgupta S, et al. (2011) Enhancement-mode N-polar GaN metal-insulator-semiconductor field effect transistors with current gain cutoff frequency of 120GHz Applied Physics Express. 4 |
| Kaun SW, Wong MH, Dasgupta S, et al. (2011) Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors Applied Physics Express. 4: 24101 |