Zachary M. Griffith, Ph.D.
Affiliations: | 2005 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Zachary Griffith"Parents
Sign in to add mentor| Mark J. W. Rodwell | grad student | 2005 | UC Santa Barbara | |
| (Ultrahigh speed indium gallium arsenide/indium phosphide DHBT devices and circuits.) | ||||
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Publications
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| Griffith Z, Urteaga M, Rowell P. (2020) A $W$ -Band SSPA With 100–140-mW $P_{\text{out}}$ , >20% PAE, and 26–30-dB $S_{21}$ Gain Across 88–104 GHz Ieee Microwave and Wireless Components Letters. 30: 189-192 |
| Griffith Z, Urteaga M, Rowell P. (2019) A Compact 140-GHz, 150-mW High-Gain Power Amplifier MMIC in 250-nm InP HBT Ieee Microwave and Wireless Components Letters. 29: 282-284 |
| Field M, Kimura T, Atkinson J, et al. (2018) Development of a 100-W 200-GHz High Bandwidth mm-Wave Amplifier Ieee Transactions On Electron Devices. 65: 2122-2128 |
| Griffith Z, Urteaga M, Rowell P. (2017) A 190-GHz High-Gain, 3-dBm OP1dB Low DC-Power Amplifier in 250-nm InP HBT Ieee Microwave and Wireless Components Letters. 27: 1128-1130 |
| Field M, Hillman C, Stupar P, et al. (2015) Vanadium dioxide phase change switches Proceedings of Spie - the International Society For Optical Engineering. 9479 |
| Griffith Z, Urteaga M, Rowell P, et al. (2015) A 6-10 mW power amplifier at 290-307.5 GHz in 250 nm InP HBT Ieee Microwave and Wireless Components Letters. 25: 597-599 |
| Hillman C, Stupar PA, Griffith Z. (2015) VO2 Switches for Millimeter and Submillimeter-Wave Applications 2015 Ieee Compound Semiconductor Integrated Circuit Symposium, Csics 2015 |
| Rollin JM, Miller D, Urteaga M, et al. (2015) A Polystrata® 820 mW G-Band Solid State Power Amplifier 2015 Ieee Compound Semiconductor Integrated Circuit Symposium, Csics 2015 |
| Griffith Z, Urteaga M, Rowell P, et al. (2015) 340-440mW Broadband, High-Efficiency E-Band PA's in InP HBT 2015 Ieee Compound Semiconductor Integrated Circuit Symposium, Csics 2015 |
| Griffith Z, Urteaga M, Rowell P, et al. (2015) 190-260GHz High-Power, Broadband PA's in 250nm InP HBT 2015 Ieee Compound Semiconductor Integrated Circuit Symposium, Csics 2015 |