Bahniman Ghosh, Ph.D.
Affiliations: | 2007 | Electrical and Computer Engineering | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Electronics and Electrical EngineeringGoogle:
"Bahniman Ghosh"Parents
Sign in to add mentor| Leonard F. Register | grad student | 2007 | UT Austin | |
| (Semiclassical Monte Carlo simulation of nano-scaled semiconductor devices.) | ||||
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Publications
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| Surana N, Ghosh B, Akram MW, et al. (2019) Differentially Graded Junctionless Transistor International Journal of Nanoscience. 18: 1850016 |
| Goswami Y, Asthana P, Ghosh B. (2017) Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications Journal of Semiconductors. 38: 54002 |
| Ghosh B, Dey R, Register LF, et al. (2017) A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator Journal of Computational Electronics. 16: 120-126 |
| Agrawal P, Kumar R, Ghosh B. (2016) Multi-Layer Defect Characterization in Quantum-Dot Cellular Automata Circuits Quantum Matter. 5: 812-818 |
| Asthana PK, Goswami Y, Ghosh B. (2016) A novel sub 20 nm single gate tunnel field effect transistor with intrinsic channel for ultra low power applications Journal of Semiconductors. 37: 54002 |
| Kumary TB, Ghosh B, Awadhiya B, et al. (2016) Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys Journal of Semiconductors. 37: 14003 |
| Ghosh B, Dey R, Register LF, et al. (2016) Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications Journal of Applied Physics. 120: 034303 |
| Goswami Y, Asthana P, Basak S, et al. (2015) Junctionless tunnel field effect transistor with nonuniform doping International Journal of Nanoscience. 14 |
| Ghosh B, Solanki G. (2015) Voltage assisted control of spin-transfer nano-oscillators Journal of Semiconductors. 36 |
| Gupta S, Ghosh B, Rahi SB. (2015) Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect Journal of Semiconductors. 36 |