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Isaac H. Wildeson, Ph.D.

Affiliations: 
2011 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Nanotechnology, Electronics and Electrical Engineering, Materials Science Engineering
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Timothy D. Sands grad student 2011 Purdue
 (Selective-area nanoheteroepitaxy for light emitting diode (LED) applications.)

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Publications

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Zhao Z, Singh A, Chesin J, et al. (2019) Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures Applied Physics Express. 12: 034003
Goodman SA, Syaranamual GJ, Chung JY, et al. (2019) Effects of Beam-Induced Carbon Deposition on Electron Energy-Loss Spectroscopy Analysis of Compositional Fluctuations in InGaN/GaN Quantum Well LEDs Microscopy and Microanalysis. 25: 652-653
Armstrong AM, Crawford MH, Koleske DD, et al. (2017) Spatial and compositional dependence of deep-level defects in InGaN LEDs (Conference Presentation) Proceedings of Spie. 10124
Bhardwaj J, Cesaratto JM, Wildeson IH, et al. (2017) Progress in high-luminance LED technology for solid-state lighting Physica Status Solidi (a). 214: 1600826
Liang Z, Wildeson IH, Colby R, et al. (2011) Built-in electric field minimization in (In, Ga)N nanoheterostructures. Nano Letters. 11: 4515-9
Wildeson IH, Ewoldt DA, Colby R, et al. (2011) Controlled growth of ordered nanopore arrays in GaN. Nano Letters. 11: 535-40
Montgomery KH, Allen CR, Wildeson IH, et al. (2011) Gettered GaP substrates for improved multijunction solar cell devices Journal of Electronic Materials. 40: 1457-1460
Colby R, Liang Z, Wildeson IH, et al. (2010) Dislocation filtering in GaN nanostructures. Nano Letters. 10: 1568-73
Liang Z, Colby R, Wildeson IH, et al. (2010) Publisher's Note: “GaN nanostructure design for optimal dislocation filtering” [J. Appl. Phys. 108, 074313 (2010)] Journal of Applied Physics. 108: 109901
Liang Z, Colby R, Wildeson IH, et al. (2010) GaN nanostructure design for optimal dislocation filtering Journal of Applied Physics. 108
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