Saurabh V. Lodha, Ph.D.
Affiliations: | 2004 | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Saurabh Lodha"Parents
Sign in to add mentor| David B. Janes | grad student | 2004 | Purdue | |
| (An experimental study of molecular electronic devices.) | ||||
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Publications
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| Varghese A, Saha D, Thakar K, et al. (2020) Near-direct bandgap WSe/ReS type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics. Nano Letters |
| Dev S, Pradhan N, Variam N, et al. (2020) Impact of N 2 Coimplant on Phosphorus Diffusion and Activation for n + /p Ge Junctions Ieee Transactions On Electron Devices. 67: 419-423 |
| Dev S, Khiangte KR, Lodha S. (2020) Wafer-scale mono-crystalline GeSn alloy on Ge by sputtering and solid phase epitaxy Journal of Physics D. 53 |
| Goyal N, Mackenzie DMA, Panchal V, et al. (2020) Enhanced thermally aided memory performance using few-layer ReS 2 transistors Applied Physics Letters. 116: 52104 |
| Goyal N, Parihar N, Jawa H, et al. (2019) Accurate Threshold Voltage Reliability Evaluation of Thin AlO Top-Gated Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses. Acs Applied Materials & Interfaces. 11: 23673-23680 |
| Dev S, Lodha S. (2019) Process Variation-Induced Contact Resistivity Variability in Nanoscale MS and MIS Contacts Ieee Transactions On Electron Devices. 66: 4320-4325 |
| Biswas J, Pradhan N, Biswas D, et al. (2019) Impact of Punch-through Stop Implants on Channel Doping and Junction Leakage for Ge |
| Tyagi A, Ghosh K, Kottantharayil A, et al. (2019) An Analytical Model for the Electrical Characteristics of Passivated Carrier- Selective Contact (CSC) Solar Cell Ieee Transactions On Electron Devices. 66: 1377-1385 |
| Xia Z, Xue H, Joishi C, et al. (2019) $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Ieee Electron Device Letters. 40: 1052-1055 |
| McGlone JF, Xia Z, Joishi C, et al. (2019) Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs Applied Physics Letters. 115: 153501 |