Jiangjiang Gu, Ph.D.
Affiliations: | 2013 | Electrical and Computer Engineering | Purdue University, West Lafayette, IN, United States |
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Electronics and Electrical EngineeringGoogle:
"Jiangjiang Gu"Mean distance: (not calculated yet)
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Publications
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| Akbulut MB, Gu J, Pap A, et al. (2017) Investigation of 3D photoresist profile effect in self-aligned patterning through virtual fabrication Proceedings of Spie. 10147 |
| Li S, Luo W, Gu J, et al. (2015) Large, tunable magnetoresistance in non-magnetic III-V nanowires. Nano Letters |
| Shin S, Wahab MA, Masuduzzaman M, et al. (2015) Direct Observation of Self-Heating in III-V Gate-All-Around Nanowire MOSFETs Ieee Transactions On Electron Devices |
| Si M, Conrad NJ, Shin S, et al. (2015) Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs Ieee Transactions On Electron Devices. 62: 3508-3515 |
| Wu H, Si M, Dong L, et al. (2015) Germanium nMOSFETs with recessed channel and S/D: Contact, scalability, interface, and drain current exceeding 1 A/mm Ieee Transactions On Electron Devices. 62: 1419-1426 |
| Neal AT, Liu H, Gu J, et al. (2013) Magneto-transport in MoS2: phase coherence, spin-orbit scattering, and the hall factor. Acs Nano. 7: 7077-82 |
| Conrad N, Shin S, Gu J, et al. (2013) Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs Ieee Transactions On Device and Materials Reliability. 13: 489-496 |
| Wang C, Xu M, Gu J, et al. (2012) GaSb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited HfAlO as Gate Dielectric Electrochemical and Solid-State Letters. 15: H51 |
| Liu H, Gu J, Ye PD. (2012) $\hbox{MoS}_{2}$ Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming Ieee Electron Device Letters. 33: 1273-1275 |
| Shen T, Neal AT, Bolen ML, et al. (2012) Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001) Journal of Applied Physics. 111 |