Robert J. Kaplar, Ph.D.
Affiliations: | 2002 | Ohio State University, Columbus, Columbus, OH |
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Condensed Matter PhysicsGoogle:
"Robert Kaplar"Parents
Sign in to add mentor| Steven A. Ringel | grad student | 2002 | Ohio State | |
| (Characterization of deep-level defects in indium-gallium-arsenic-nitride.) | ||||
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Publications
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| Gallagher JC, Ebrish MA, Porter MA, et al. (2022) Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques. Scientific Reports. 12: 658 |
| Baca AG, Armstrong AM, Klein BA, et al. (2020) Al-rich AlGaN based transistors Journal of Vacuum Science and Technology. 38: 20803 |
| Lundh JS, Song Y, Chatterjee B, et al. (2020) Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics Journal of Electronic Packaging. 142: 31113 |
| Ebrish MA, Anderson TJ, Koehler AD, et al. (2020) A study on the impact of mid-gap defects on vertical GaN diodes Ieee Transactions On Semiconductor Manufacturing. 1-1 |
| Chatterjee B, Lundh JS, Song Y, et al. (2020) Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs Ieee Electron Device Letters. 41: 461-464 |
| Sabbar A, Madhusoodhanan S, Al-Kabi S, et al. (2020) Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications Ieee Journal of Emerging and Selected Topics in Power Electronics. 8: 845-853 |
| Sabbar A, Madhusoodhanan S, Al-Kabi S, et al. (2019) High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules. Scientific Reports. 9: 16758 |
| Reza S, Klein BA, Baca AG, et al. (2019) High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study Japanese Journal of Applied Physics. 58: SCCD04 |
| Madhusoodhanan S, Sabbar A, Al-Kabi S, et al. (2019) High-Temperature Optical Characterization of Wide Band Gap Light Emitting Diodes and Photodiodes for Future Power Module Application Advances in Science, Technology and Engineering Systems Journal. 4: 17-22 |
| Carey PH, Pearton SJ, Ren F, et al. (2019) Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors Ieee Transactions On Semiconductor Manufacturing. 32: 473-477 |