Steven Chuang, Ph.D.
Affiliations: | 2014 | Electrical Engineering | University of California, Berkeley, Berkeley, CA, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Steven Chuang"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Ali Javey | grad student | 2014 | UC Berkeley | |
| (Low Dimensional Materials for Next Generation Electronics.) | ||||
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Publications
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| Chen K, Kapadia R, Harker A, et al. (2016) Direct growth of single-crystalline III-V semiconductors on amorphous substrates. Nature Communications. 7: 10502 |
| Ha TJ, Chen K, Chuang S, et al. (2015) Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films. Nano Letters. 15: 392-7 |
| McDonnell S, Azcatl A, Addou R, et al. (2014) Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments. Acs Nano. 8: 6265-72 |
| Tosun M, Chuang S, Fang H, et al. (2014) High-gain inverters based on WSe2 complementary field-effect transistors. Acs Nano. 8: 4948-53 |
| Chuang S, Battaglia C, Azcatl A, et al. (2014) MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts. Nano Letters. 14: 1337-42 |
| Chuang S, Gao Q, Kapadia R, et al. (2013) Ballistic InAs nanowire transistors. Nano Letters. 13: 555-8 |
| Chuang S, Kapadia R, Fang H, et al. (2013) Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes Applied Physics Letters. 102 |
| Fang H, Chuang S, Chang TC, et al. (2012) High-performance single layered WSe₂ p-FETs with chemically doped contacts. Nano Letters. 12: 3788-92 |
| Takei K, Madsen M, Fang H, et al. (2012) Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors. Nano Letters. 12: 2060-6 |
| Fang H, Chuang S, Takei K, et al. (2012) Ultrathin-body high-mobility InAsSb-on-insulator field-effect transistors Ieee Electron Device Letters. 33: 504-506 |