Nassim Rahimi, Ph.D.
Affiliations: | 2014 | Optical Science and Engineering | University of New Mexico, Albuquerque, NM, United States |
Area:
Materials Science Engineering, Energy, General EngineeringGoogle:
"Nassim Rahimi"Mean distance: 26.42 | S | N | B | C | P |
Parents
Sign in to add mentorLuke F. Lester | grad student | 2014 | Univ. of New Mexico | |
(Design, fabrication and characterization of epitaxial and non-epitaxial thermophotovoltaic cells.) |
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Publications
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Abdallah SA, Herrera DJ, Conlon BP, et al. (2015) Emitter thickness optimization for GaSb thermophotovoltaic cells grown by Molecular Beam Epitaxy Proceedings of Spie - the International Society For Optical Engineering. 9562 |
Rahimi N, Herrera DJ, Aragon A, et al. (2015) GaSb thermophotovoltaics: Current challenges and solutions Proceedings of Spie - the International Society For Optical Engineering. 9358 |
Rahimi N, Henera DJ, Abdallah S, et al. (2015) Epitaxial and non-epitaxial large area GaSb-based thermophotovoltaic (TPV) cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015 |
Vaughan EI, Rahimi N, Balakrishnan G, et al. (2015) Thin-Film Gallium Antimonide for Room-Temperature Radiation Detection Journal of Electronic Materials. 44: 3288-3293 |
Rahimi N, Behzadirad M, Renteria EJ, et al. (2014) Beryllium implant activation and damage recovery study in n-type GaSb Proceedings of Spie - the International Society For Optical Engineering. 8981 |
Rahimi N, Aragon AA, Shima DM, et al. (2014) Characterization of surface defects on Be-implanted GaSb Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32 |
Rahimi N, Aragon AA, Romero OS, et al. (2014) Low resistance palladium/molybdenum based ohmic contacts to n-GaSb grown on GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32 |
Romero OS, Aragon AA, Rahimi N, et al. (2014) Transmission electron microscopy-based analysis of electrically conductive surface defects in large area GaSb homoepitaxial diodes grown using molecular beam epitaxy Journal of Electronic Materials. 43: 926-930 |
Rahimi N, Aragon AA, Romero OS, et al. (2013) Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique Proceedings of Spie - the International Society For Optical Engineering. 8620 |
Rahimi N, Aragon AA, Romero OS, et al. (2013) Ultra-low resistance NiGeAu and PdGeAu ohmic contacts on N-GaSb grown on GaAs Conference Record of the Ieee Photovoltaic Specialists Conference. 2123-2126 |