Se-Hoon Lee, Ph.D.
Affiliations: | 2011 | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Nanotechnology, Electronics and Electrical EngineeringGoogle:
"Se-Hoon Lee"Parents
Sign in to add mentor| Sanjay K. Banerjee | grad student | 2011 | UT Austin | |
| (Process Integration and Performance Evaluation of Germanium-based Quantum Well Channel MOSFETs for Sub-22nm Node Digital CMOS Logic Technology.) | ||||
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Publications
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| Oh J, Jeon K, Lee SH, et al. (2012) High mobility CMOS transistors on Si/SiGe heterostructure channels Microelectronic Engineering. 97: 26-28 |
| Oh J, Huang J, Ok I, et al. (2011) High transport Si/SiGe heterostructures for CMOS transistors with orientation and strain enhanced mobility Ieice Transactions On Electronics. 712-716 |
| Lee SH, Majhi P, Ferrer DA, et al. (2011) Impact of millisecond flash-assisted rapid thermal annealing on SiGe heterostructure channel pMOSFETs with a high-k/metal gate Ieee Transactions On Electron Devices. 58: 2917-2923 |
| Lee SH, Nainani A, Oh J, et al. (2011) On-state performance enhancement and channel-direction-dependent performance of a biaxial compressive strained Si |
| Oh J, Huang J, Chen YT, et al. (2011) Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors Thin Solid Films. 520: 442-444 |
| Li F, Lee S, Fang Z, et al. (2010) Flicker-Noise Improvement in 100-nm $L_{g}\ \hbox{Si}_{0.50}\hbox{Ge}_{0.50}$ Strained Quantum-Well Transistors Using Ultrathin Si Cap Layer Ieee Electron Device Letters. 31: 47-49 |
| Lee SH, Majhi P, Oh J, et al. (2008) Demonstration of Lg ∼ nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high Ion/Ioff (>5 × 104, and controlled short channel effects (SCEs) Ieee Electron Device Letters. 29: 1017-1020 |
| Dey S, Lee S, Joshi SV, et al. (2007) Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate Mrs Proceedings. 995 |
| Kelly DQ, Lee S, Kalra P, et al. (2007) Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs Microelectronic Engineering. 84: 2054-2057 |