Yanan Sun
Affiliations: | 2014 | Electronic and Computer Engineering | Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong |
| 2014- | Shanghai Jiao Tong University, Shanghai, Shanghai Shi, China |
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"Yanan Sun"
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Publications
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| Sun Y, He W, Mao Z, et al. (2020) Monolithic 3D Carbon Nanotube Memory for Enhanced Yield and Integration Density Ieee Transactions On Circuits and Systems. 67: 2431-2441 |
| Sun Y, Gu J, He W, et al. (2019) Energy-Efficient Nonvolatile SRAM Design Based on Resistive Switching Multi-Level Cells Ieee Transactions On Circuits and Systems Ii-Express Briefs. 66: 753-757 |
| Wang C, Sun Y, Hu S, et al. (2018) Variation-Aware Global Placement for Improving Timing-Yield of Carbon-Nanotube Field Effect Transistor Circuit Acm Transactions On Design Automation of Electronic Systems. 23: 1-27 |
| Sun Y, He W, Mao Z, et al. (2018) Metallic-CN-Removal-Tolerant High-Yield Six-CN-MOSFET SRAM Cell for Carbon-Based Embedded Memory Ieee Transactions On Electron Devices. 65: 1230-1238 |
| Sun Y, He W, Mao Z, et al. (2017) High-Yield and Robust 9T SRAM Cell Tolerant to Removal of Metallic Carbon Nanotubes Ieee Transactions On Device and Materials Reliability. 17: 20-31 |
| Jin W, He W, Jiang J, et al. (2017) A 0.33 V 2.5 μW cross-point data-aware write structure, read-half-select disturb-free sub-threshold SRAM in 130 nm CMOS Integration. 58: 27-34 |
| Sun Y, He W, Mao Z, et al. (2017) Variable strength keeper for high-speed and low-leakage carbon nanotube domino logic Microelectronics Journal. 62: 12-20 |
| Sun Y, Jiao H, Kursun V. (2014) A Novel Robust and Low-Leakage SRAM Cell With Nine Carbon Nanotube Transistors Ieee Transactions On Very Large Scale Integration (Vlsi) Systems |
| Sun Y, Kursun V. (2014) Carbon nanotubes blowing new life into NP dynamic CMOS circuits Ieee Transactions On Circuits and Systems I: Regular Papers. 61: 420-428 |
| Sun Y, Kursun V. (2011) N-Type carbon-nanotube MOSFET device profile optimization for very large scale integration Transactions On Electrical and Electronic Materials. 12: 43-50 |