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Ajeet Rohatgi

Affiliations:

Electrical and Computer Engineering

Georgia Institute of Technology, Atlanta, GA

Area:

Electronics and Electrical Engineering

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"Ajeet Rohatgi"

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Parents

Children

Ji-Weon Jeong	grad student	2002	Georgia Tech
Jed Brody	grad student	2003	Georgia Tech
Vijay Yelundur	grad student	2003	Georgia Tech
Ben M. Damiani	grad student	2004	Georgia Tech
Aleksandar Pregelj	grad student	2004	Georgia Tech
Mohamed M. Hilali	grad student	2005	Georgia Tech
Kenta Nakayashiki	grad student	2007	Georgia Tech
Vichai Meemongkolkiat	grad student	2008	Georgia Tech
Alan H. Ristow	grad student	2008	Georgia Tech
Manav Sheoran	grad student	2009	Georgia Tech
Saptharishi Ramanathan	grad student	2012	Georgia Tech

Collaborators

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Publications

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Das U, Theisen R, Hua A, et al. (2021) Efficient passivation of n-type and p-type silicon surface defects by hydrogen sulfide gas reaction. Journal of Physics. Condensed Matter : An Institute of Physics Journal
Wilkes GC, Upadhyaya AD, Rohatgi A, et al. (2020) Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells Ieee Journal of Photovoltaics. 10: 1283-1289
Rohatgi A, Zhu K, Tong J, et al. (2020) 26.7% Efficient 4-Terminal Perovskite–Silicon Tandem Solar Cell Composed of a High-Performance Semitransparent Perovskite Cell and a Doped Poly-Si/SiOx Passivating Contact Silicon Cell Ieee Journal of Photovoltaics. 10: 417-422
Madani K, Rohatgi A, Min KH, et al. (2020) Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al2O3 with SiNx capping Solar Energy Materials and Solar Cells. 218: 110718
Huang Y, Ok Y, Madani K, et al. (2020) Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact Solar Energy Materials and Solar Cells. 214: 110585
Yoon W, Scheiman D, Ok Y, et al. (2020) Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem solar cells Solar Energy Materials and Solar Cells. 210: 110482
Chou HC, Rohatgi A, Thomas EW, et al. (2019) Effects of Cu on CdTe / CdS Heterojunction Solar Cells with Au/Cu Contacts Journal of the Electrochemical Society. 142: 254-259
Ok Y, Tam AM, Huang Y, et al. (2018) Screen printed, large area bifacial N-type back junction silicon solar cells with selective phosphorus front surface field and boron doped poly-Si/SiOx passivated rear emitter Applied Physics Letters. 113: 263901
Ryu K, Madani K, Rohatgi A, et al. (2018) High efficiency screen-printed n-type silicon solar cell using co-diffusion of APCVD boron emitter and POCl 3 back surface field Current Applied Physics. 18: 231-235
Yoon W, Moore JE, Cho E, et al. (2017) Hole-selective molybdenum oxide as a full-area rear contact to crystalline p-type Si solar cells Japanese Journal of Applied Physics. 56: 08MB18

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