John D. Cressler

Affiliations: 
1992-2002 Electrical engineering Auburn University, Auburn, AL, United States 
 2002- Electrical and Computer Engineering Georgia Institute of Technology, Atlanta, GA 
Area:
Electronics and Electrical Engineering, Computer Engineering
Website:
https://ece.gatech.edu/directory/john-d-cressler
Google:
"John Cressler"
Bio:

https://www.apam.columbia.edu/dissertation-index

Parents

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Edward S. Yang grad student 1990 Columbia
 (The Low Temperature Static and Dynamic Properties of High-Performance Silicon Bipolar Transistors)

Children

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George Tzintzarov grad student 2017- Georgia Tech
Zhenrong Jin grad student 2004 Georgia Tech
Qingqing Liang grad student 2004 Georgia Tech
Wei-Min Kuo grad student 2006 Georgia Tech
Enhai Zhao grad student 2006 Georgia Tech
Ramkumar Krithivasan grad student 2007 Georgia Tech
Chendong Zhu grad student 2007 Georgia Tech
Xiangtao Li grad student 2008 Georgia Tech
Joel Andrews grad student 2009 Georgia Tech
Marco Bellini grad student 2009 Georgia Tech
Curtis M. Grens grad student 2009 Georgia Tech
Laleh Najafizadeh grad student 2009 Georgia Tech
Aravind Appaswamy grad student 2010 Georgia Tech
Tushar K. Thrivikraman grad student 2010 Georgia Tech
Jiahui Yuan grad student 2010 Georgia Tech
Stephen J. Horst grad student 2011 Georgia Tech
Chung H. Poh grad student 2011 Georgia Tech
Kurt A. Moen grad student 2012 Georgia Tech
Sachin Seth grad student 2012 Georgia Tech
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Publications

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Song I, Ryu G, Jung SH, et al. (2023) Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking. Sensors (Basel, Switzerland). 23
Sarker MAR, Jung S, Ildefonso A, et al. (2020) Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits. Sensors (Basel, Switzerland). 20
Nergui D, Ildefonso A, Tzintzarov GN, et al. (2020) Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam Ieee Transactions On Nuclear Science. 67: 91-98
Ildefonso A, Warner JH, Cressler JD, et al. (2020) Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI Ieee Transactions On Nuclear Science. 67: 71-80
Goley PS, Dodds NA, Frounchi M, et al. (2020) Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage Ieee Transactions On Nuclear Science. 67: 296-304
Frounchi M, Cressler JD. (2020) Dual-Band Millimeter-Wave Quadrature LO Generation With a Common-Centroid Floorplan Ieee Transactions On Circuits and Systems Ii: Express Briefs. 67: 260-264
Cheon CD, Cho M, Rao SG, et al. (2020) A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch Ieee Microwave and Wireless Components Letters. 1-4
Coen CT, Frounchi M, Lourenco NE, et al. (2020) A 60-GHz SiGe Radiometer Calibration Switch Utilizing a Coupled Avalanche Noise Source Ieee Microwave and Wireless Components Letters. 30: 417-420
Ju I, Gong Y, Cressler JD. (2020) Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifiers With a Compact 2nd-Harmonic-Shorted Four-Way Transformer and a Thermally Compensating Dynamic Bias Circuit Ieee Journal of Solid-State Circuits. 55: 2356-2370
Wang Z, Ying H, Chern W, et al. (2020) Cryogenic characterization of a ferroelectric field-effect-transistor Applied Physics Letters. 116: 042902
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