John D. Cressler
Affiliations: | 1992-2002 | Electrical engineering | Auburn University, Auburn, AL, United States |
2002- | Electrical and Computer Engineering | Georgia Institute of Technology, Atlanta, GA |
Area:
Electronics and Electrical Engineering, Computer EngineeringWebsite:
https://ece.gatech.edu/directory/john-d-cresslerGoogle:
"John Cressler"Bio:
Parents
Sign in to add mentorEdward S. Yang | grad student | 1990 | Columbia | |
(The Low Temperature Static and Dynamic Properties of High-Performance Silicon Bipolar Transistors) |
Children
Sign in to add traineeGeorge Tzintzarov | grad student | 2017- | Georgia Tech |
Zhenrong Jin | grad student | 2004 | Georgia Tech |
Qingqing Liang | grad student | 2004 | Georgia Tech |
Wei-Min Kuo | grad student | 2006 | Georgia Tech |
Enhai Zhao | grad student | 2006 | Georgia Tech |
Ramkumar Krithivasan | grad student | 2007 | Georgia Tech |
Chendong Zhu | grad student | 2007 | Georgia Tech |
Xiangtao Li | grad student | 2008 | Georgia Tech |
Joel Andrews | grad student | 2009 | Georgia Tech |
Marco Bellini | grad student | 2009 | Georgia Tech |
Curtis M. Grens | grad student | 2009 | Georgia Tech |
Laleh Najafizadeh | grad student | 2009 | Georgia Tech |
Aravind Appaswamy | grad student | 2010 | Georgia Tech |
Tushar K. Thrivikraman | grad student | 2010 | Georgia Tech |
Jiahui Yuan | grad student | 2010 | Georgia Tech |
Stephen J. Horst | grad student | 2011 | Georgia Tech |
Chung H. Poh | grad student | 2011 | Georgia Tech |
Kurt A. Moen | grad student | 2012 | Georgia Tech |
Sachin Seth | grad student | 2012 | Georgia Tech |
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Publications
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Song I, Ryu G, Jung SH, et al. (2023) Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking. Sensors (Basel, Switzerland). 23 |
Sarker MAR, Jung S, Ildefonso A, et al. (2020) Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits. Sensors (Basel, Switzerland). 20 |
Nergui D, Ildefonso A, Tzintzarov GN, et al. (2020) Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam Ieee Transactions On Nuclear Science. 67: 91-98 |
Ildefonso A, Warner JH, Cressler JD, et al. (2020) Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI Ieee Transactions On Nuclear Science. 67: 71-80 |
Goley PS, Dodds NA, Frounchi M, et al. (2020) Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage Ieee Transactions On Nuclear Science. 67: 296-304 |
Frounchi M, Cressler JD. (2020) Dual-Band Millimeter-Wave Quadrature LO Generation With a Common-Centroid Floorplan Ieee Transactions On Circuits and Systems Ii: Express Briefs. 67: 260-264 |
Cheon CD, Cho M, Rao SG, et al. (2020) A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch Ieee Microwave and Wireless Components Letters. 1-4 |
Coen CT, Frounchi M, Lourenco NE, et al. (2020) A 60-GHz SiGe Radiometer Calibration Switch Utilizing a Coupled Avalanche Noise Source Ieee Microwave and Wireless Components Letters. 30: 417-420 |
Ju I, Gong Y, Cressler JD. (2020) Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifiers With a Compact 2nd-Harmonic-Shorted Four-Way Transformer and a Thermally Compensating Dynamic Bias Circuit Ieee Journal of Solid-State Circuits. 55: 2356-2370 |
Wang Z, Ying H, Chern W, et al. (2020) Cryogenic characterization of a ferroelectric field-effect-transistor Applied Physics Letters. 116: 042902 |