Mark K. Behbehani, Ph.D.

Affiliations: 
2004 North Carolina State University, Raleigh, NC 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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Donald W. Brenner grad student 2004 NCSU
 (Study of phase separation and ordering in indium gallium nitride and aluminium indium gallium nitride: Experimental and computer modeling.)
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Publications

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El-Masry NA, Behbehani MK, LeBoeuf SF, et al. (2001) Self-assembled AlInGaN quaternary superlattice structures Applied Physics Letters. 79: 1616-1618
Joshkin VA, Roberts JC, Piner EL, et al. (1997) Growth and characterization of In-based nitride compounds and their double heterostructures Materials Research Society Symposium - Proceedings. 468: 13-21
Joshkin VA, Roberts JC, McIntosh FG, et al. (1997) Optical memory effect in GaN epitaxial films Applied Physics Letters. 71: 234-236
Piner EL, Behbehani MK, El-Masry NA, et al. (1997) Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films Applied Physics Letters. 71: 2023-2025
Piner EL, Behbehani MK, El-Masry NA, et al. (1997) Effect of hydrogen on the indium incorporation in InGaN epitaxial films Applied Physics Letters. 70: 461-463
McIntosh FG, Piner EL, Roberts JC, et al. (1997) Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system Applied Surface Science. 112: 98-101
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