Purushothaman Srinivasan, Ph.D.
Affiliations: | 2007 | New Jersey Institute of Technology, Newark, NJ, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Purushothaman Srinivasan"Parents
Sign in to add mentor| Cor Claeys | grad student | 2007 | NJIT | |
| (Characterization and modeling of low-frequency noise in hafnium-based high-kappa dielectrics for future CMOS applications.) | ||||
| Durgamadhab Misra | grad student | 2007 | NJIT | |
| (Characterization and modeling of low-frequency noise in hafnium-based high-kappa dielectrics for future CMOS applications.) | ||||
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Publications
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| Siddiqui S, Galatage R, Zhao W, et al. (2020) High quality interfacial layer formation for Si0.75Ge0.25 (100) high-k metal gate stack Microelectronic Engineering. 223: 111219 |
| Ding YM, Misra DD, Srinivasan P. (2017) Flicker Noise Performance on Thick and Thin Oxide FinFETs Ieee Transactions On Electron Devices. 64: 2321-2325 |
| Samnakay R, Balandin AA, Srinivasan P. (2017) Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability Solid-State Electronics. 135: 37-42 |
| Yamaguchi S, Bayindir Z, He X, et al. (2017) Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices Microelectronics Reliability. 72: 80-84 |
| Kerber A, Srinivasan P. (2014) Impact of stress mode on stochastic BTI in scaled MG/HK CMOS devices Ieee Electron Device Letters. 35: 431-433 |
| Chandra N, Chandrashekhar S, Francis R, et al. (2014) High speed Bias Temperature Instability measurements on 20 nm RMG HKMG MOSFETs Solid-State Electronics. 101: 18-22 |
| Iqbal Mahmud M, Celik-Butler Z, Hao P, et al. (2013) A physics-based analytical 1/f noise model for RESURF LDMOS transistors Ieee Transactions On Electron Devices. 60: 677-683 |
| Mahmud MI, Çelik-Butler Z, Hao P, et al. (2012) Effect of stress-induced degradation in LDMOS 1/f noise characteristics Ieee Electron Device Letters. 33: 107-109 |
| Wirth G, Vasileska D, Ashraf N, et al. (2012) Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants Microelectronics Reliability. 52: 2955-2961 |
| Ashraf N, Vasileska D, Wirth G, et al. (2011) Accurate model for the threshold voltage fluctuation estimation in 45-nm channel length MOSFET devices in the presence of random traps and random dopants Ieee Electron Device Letters. 32: 1044-1046 |