Kuang Sheng

Affiliations: 
Graduate School - New Brunswick Rutgers University, New Brunswick, New Brunswick, NJ, United States 
Area:
Electronics and Electrical Engineering
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"Kuang Sheng"
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Publications

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Wang B, Xu H, Ren N, et al. (2023) A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique. Micromachines. 14
Xu H, Ren N, Wu J, et al. (2021) The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes. Materials (Basel, Switzerland). 14
Zhang M, Ren N, Guo Q, et al. (2019) Modeling and Analysis of vgs Characteristics for Upper-Side and Lower-Side Switches at Turn-on Transients for a 1200V/200A Full-SiC Power Module. Micromachines. 11
Li H, Wang J, Ren N, et al. (2019) Investigation of 1200 V SiC MOSFETs' Surge Reliability. Micromachines. 10
Ren N, Hu H, Lyu X, et al. (2019) Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT Solid-State Electronics. 152: 33-40
Wang H, Wang J, Liu L, et al. (2018) Trench Termination With SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices Ieee Electron Device Letters. 39: 1900-1903
Han S, Yang S, Sheng K. (2018) High-Voltage and High- $I_{\text {ON}}/I_{\text {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination Ieee Electron Device Letters. 39: 572-575
Sheng K, Yang S, Guo Q, et al. (2017) Recent Progress in SiC and GaN Power Devices Ecs Transactions. 80: 37-51
Hong WC, Ku CJ, Li R, et al. (2016) MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics. Scientific Reports. 6: 34169
Chen S, Liu A, He J, et al. (2016) Design and Application of High-Voltage SiC JFET and Its Power Modules Ieee Journal of Emerging and Selected Topics in Power Electronics. 4: 780-789
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