Kuang Sheng
Affiliations: | Graduate School - New Brunswick | Rutgers University, New Brunswick, New Brunswick, NJ, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Kuang Sheng"
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Publications
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Wang B, Xu H, Ren N, et al. (2023) A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique. Micromachines. 14 |
Xu H, Ren N, Wu J, et al. (2021) The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes. Materials (Basel, Switzerland). 14 |
Zhang M, Ren N, Guo Q, et al. (2019) Modeling and Analysis of vgs Characteristics for Upper-Side and Lower-Side Switches at Turn-on Transients for a 1200V/200A Full-SiC Power Module. Micromachines. 11 |
Li H, Wang J, Ren N, et al. (2019) Investigation of 1200 V SiC MOSFETs' Surge Reliability. Micromachines. 10 |
Ren N, Hu H, Lyu X, et al. (2019) Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT Solid-State Electronics. 152: 33-40 |
Wang H, Wang J, Liu L, et al. (2018) Trench Termination With SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices Ieee Electron Device Letters. 39: 1900-1903 |
Han S, Yang S, Sheng K. (2018) High-Voltage and High- $I_{\text {ON}}/I_{\text {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination Ieee Electron Device Letters. 39: 572-575 |
Sheng K, Yang S, Guo Q, et al. (2017) Recent Progress in SiC and GaN Power Devices Ecs Transactions. 80: 37-51 |
Hong WC, Ku CJ, Li R, et al. (2016) MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics. Scientific Reports. 6: 34169 |
Chen S, Liu A, He J, et al. (2016) Design and Application of High-Voltage SiC JFET and Its Power Modules Ieee Journal of Emerging and Selected Topics in Power Electronics. 4: 780-789 |