Zhichao Lu, Ph.D.
Affiliations: | 2010 | University of Florida, Gainesville, Gainesville, FL, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Zhichao Lu"Parents
Sign in to add mentor| Jerry G. Fossum | grad student | 2010 | UF Gainesville | |
| (Physical analysis and design of nanoscale floating-body dram cells.) | ||||
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Publications
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| Wu Q, Chen J, Lu Z, et al. (2012) Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded Memories Ieee Electron Device Letters. 33: 743-745 |
| Lu Z, Fossum JG, Zhou Z. (2011) A Floating-Body/Gate DRAM Cell Upgraded for Long Retention Time Ieee Electron Device Letters. 32: 731-733 |
| Aoulaiche M, Collaert N, Degraeve R, et al. (2010) BJT-Mode Endurance on a 1T-RAM Bulk FinFET Device Ieee Electron Device Letters. 31: 1380-1382 |
| Zhou Z, Fossum JG, Lu Z. (2009) Physical Insights on BJT-Based 1T DRAM Cells Ieee Electron Device Letters. 30: 565-567 |
| Lu Z, Fossum JG, Yang J, et al. (2009) A Simplified Superior Floating-Body/Gate DRAM Cell Ieee Electron Device Letters. 30: 282-284 |
| Lu Z, Fossum JG, Zhang W, et al. (2008) A Novel Two-Transistor Floating-Body/Gate Cell for Low-Power Nanoscale Embedded DRAM Ieee Transactions On Electron Devices. 55: 1511-1518 |
| Fossum JG, Lu Z, Trivedi VP. (2007) New Insights on “Capacitorless” Floating-Body DRAM Cells Ieee Electron Device Letters. 28: 513-516 |
| Lu Z, Fossum JG. (2007) Short-Channel Effects in Independent-Gate FinFETs Ieee Electron Device Letters. 28: 145-147 |