Bénédicte Balland

University of Geneva, Geneva, Switzerland 
"Bénédicte Balland"
Mean distance: 15.08 (cluster 40)
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Balland B, Bureau JC, Botton R, et al. (1993) Physicochemical characterization by means of IR absorption spectroscopy of Si3N4 thin films obtained by chemical vapour deposition assisted by in situ electrical disharge Materials Science and Engineering B. 20: 153-156
Garcia V, Glachant A, Bureau JC, et al. (1993) Nitridation of thin SiO2 films induced by low energy (3-100 eV) electron bombardment Microelectronic Engineering. 22: 73-76
Balland B, Glachant A, Bureau JC, et al. (1990) Nitridation of SiO2 thin films at low ammonia pressures: Composition and electrical properties Thin Solid Films. 190: 103-128
Balland B, Lemiti M, Audisio S, et al. (1990) Thermally stimulated current properties of alkaline ions in CVD Si3N4 Journal of the Electrochemical Society. 137: 2845-2849
Bureau JC, Glachant A, Balland B. (1990) Thermal nitridation of SiO2 thin films in NH3 + H2O (or O2) mixtures Physica Status Solidi (a) Applied Research. 120: 507-517
Bureau JC, Amri Z, Claudy P, et al. (1989) Comparative study of lithium and sodium hexahydrido- and hexadeuteridoaluminates. V - Electric conduction in Li3AlH6 and Na3AlH6 | Etude comparative des hexahydrido- et des hexadeuteridoaluminates de lithium et de sodium. V - Conduction electrique dans Li3AlH6 et Na3AlH6 Materials Research Bulletin. 24: 653-660
Glachant A, Balland B, Ronda A, et al. (1988) Nitridation of Sio2thin films in low ammonia pressures: An AES, SIMS, XPS and Raman spectroscopy investigation Surface Science. 205: 287-310
Glachant A, Balland B, Ronda A, et al. (1988) Superficial-enhanced thermal nitridation of SiO2 thin films European Solid-State Device Research Conference. C4413-C4416
Lubowiecki V, Ledys JL, Plossu C, et al. (1987) REFRACTORY METAL GATE APPROACH FOR MICRONIC CMOS TECHNOLOGY. . 169-176
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