Christophe A. Hurni, Ph.D.
Affiliations: | 2012 | Materials | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Christophe Hurni"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| James Stephen Speck | grad student | 2012 | UC Santa Barbara | |
| (Characterization of Polar, Semi-Polar, and Non-Polar p-n Homo and Hetero-junctions grown by Ammonia Molecular Beam Epitaxy.) | ||||
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Publications
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| David A, Young NG, Hurni CA, et al. (2019) Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap Physical Review Applied. 11 |
| David A, Hurni CA, Young NG, et al. (2017) Field-assisted Shockley-Read-Hall recombinations in III-nitride quantum wells Applied Physics Letters. 111: 233501 |
| David A, Young NG, Hurni CA, et al. (2017) All-optical measurements of carrier dynamics in bulk-GaN LEDs: Beyond the ABC approximation Applied Physics Letters. 110: 253504 |
| David A, Hurni CA, Young NG, et al. (2016) Erratum: “Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures” [Appl. Phys. Lett. 109, 033504 (2016)] Applied Physics Letters. 109: 99902 |
| David A, Hurni CA, Young NG, et al. (2016) Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling Applied Physics Letters. 109 |
| David A, Hurni CA, Young NG, et al. (2016) Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures Applied Physics Letters. 109 |
| Yeluri R, Lu J, Hurni CA, et al. (2015) Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction Applied Physics Letters. 106 |
| Hurni CA, David A, Cich MJ, et al. (2015) Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation Applied Physics Letters. 106 |
| David A, Hurni CA, Aldaz RI, et al. (2014) High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes Applied Physics Letters. 105 |
| Hurni CA, Kroemer H, Mishra UK, et al. (2014) M-plane (1010) and (2021) GaN/AlxGa1-xN conduction band offsets measured by capacitance-voltage profiling Applied Physics Letters. 105 |