Tyler A. Growden
Affiliations: | 2019- | U.S. Naval Research Laboratory, Washington, DC, United States |
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| Storm DF, Growden TA, Cornuelle EM, et al. (2020) Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire Journal of Vacuum Science & Technology B. 38: 032214 |
| Zhang W, Growden TA, Storm DF, et al. (2020) Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models Ieee Transactions On Electron Devices. 67: 75-79 |
| Cornuelle EM, Growden TA, Storm DF, et al. (2020) Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 Aip Advances. 10: 055307 |
| Growden TA, Storm DF, Cornuelle EM, et al. (2020) Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes Applied Physics Letters. 116: 113501 |
| Growden TA, Cornuelle EM, Storm DF, et al. (2019) 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template Applied Physics Letters. 114: 203503 |
| Growden TA, Zhang W, Brown ER, et al. (2018) Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures. Light, Science & Applications. 7: 17150 |
| Growden TA, Zhang W, Brown ER, et al. (2018) 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes Applied Physics Letters. 112: 033508 |
| Storm DF, Growden TA, Zhang W, et al. (2017) AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 02B110 |
| Zhang W, Brown ER, Growden TA, et al. (2016) A Nonlinear Circuit Simulation of Switching Process in Resonant-Tunneling Diodes Ieee Transactions On Electron Devices. 63: 4993-4997 |
| Growden TA, Storm DF, Zhang W, et al. (2016) Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy Applied Physics Letters. 109 |