Hyeon-Kyun Noh
Affiliations: | 2007-2013 | Physics | Korea Advanced Institute of Science and Technology, Daejeon, South Korea |
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| Oh YJ, Noh HK, Chang KJ. (2015) The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In-Ga-Zn-O thin film transistors. Science and Technology of Advanced Materials. 16: 034902 |
| Bhuwalka KK, Wu Z, Noh HK, et al. (2015) In |
| Oh Y, Lee AT, Noh H, et al. (2013) Hybrid functional versus quasiparticle calculations for the Schottky barrier and effective work function at TiN/HfO 2 interface Physical Review B. 87: 75325 |
| Noh HK, Oh YJ, Chang KJ. (2012) Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO 2 and Ni/HfO 2 interfaces Physica B: Condensed Matter. 407: 2907-2910 |
| Oh YJ, Noh HK, Chang KJ. (2012) First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO 2 Physica B: Condensed Matter. 407: 2989-2992 |
| Oh YJ, Hwang J, Noh H, et al. (2012) Ab initio study of boron segregation and deactivation at Si/SiO2 interface Microelectronic Engineering. 89: 120-123 |
| Chang KJ, Ryu B, Noh H, et al. (2011) Electronic Structure of O-vacancy in High-k Dielectrics and Oxide Semiconductors Mrs Proceedings. 1370 |
| Noh H, Chang K, Ryu B, et al. (2011) Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors Physical Review B. 84: 115205-115205 |
| Ryu B, Noh H, Choi E, et al. (2010) O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors Applied Physics Letters. 97: 22108-22108 |
| Noh H, Ryu B, Choi E, et al. (2009) Local bonding effect on the defect states of oxygen vacancy in amorphous HfSiO4 Applied Physics Letters. 95: 082905 |