Yidan Wei
Affiliations: | Harbin Institute of Technology, PR China |
Google:
"Yidan Wei"Mean distance: (not calculated yet)
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Wei Y, Wang T, Zhang Y, et al. (2020) Effects of carbon related defects on opto-electronic properties of β-Ga2O3: The first principle calculation Results in Physics. 17: 103060 |
| Yang J, Gao Y, Jiao Q, et al. (2020) Effect of electric field on radiation defects in NPN transistors Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 467: 114-117 |
| Wei Y, Liu C, Wang T, et al. (2020) Electronegativity regulation on opt-electronic properties of non van der Waals two-dimensional material: Ga2O3 Computational Materials Science. 179: 109692 |
| Li H, Liu C, Zhang Y, et al. (2019) Electron radiation effects on structural and electrical properties of MoS2 Field Effect Transistor. Nanotechnology |
| Wei Y, Liu C, Zhang Y, et al. (2019) Modulation of electronic and optical properties by surface vacancies in low-dimensional β-GaO. Physical Chemistry Chemical Physics : Pccp |
| Li H, Liu C, Zhang Y, et al. (2019) Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations Semiconductor Science and Technology. 34: 095010 |
| Wei Y, Li X, Liu C, et al. (2019) Atomic and electron analyzing of irradiation damage in Si/SiO 2 interfaces caused by irradiation: First-principle calculation Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 451: 89-92 |
| Liu C, Zhang Y, Qi C, et al. (2019) Evolution of radiation defects in NPN bipolar junction transistors irradiated by 3 MeV protons Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 444: 50-53 |
| Li X, Yang J, Fleetwood DM, et al. (2018) Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors Ieee Transactions On Nuclear Science. 65: 1271-1276 |