Hung Ta Wang
Affiliations: | 2008 | Chemical Engineering | University of Florida, Gainesville, Gainesville, FL, United States |
2008-2011 | Chemistry | University of California, Berkeley, Berkeley, CA, United States | |
2011-2016 | Chemical and Biological Engineering | The University of Alabama, Tuscaloosa, AL | |
2016- | Physical Science and Technology | ShanghaiTech University |
Website:
http://hr.shanghaitech.edu.cn/2018/1206/c4789a37895/page.htmGoogle:
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Parents
Sign in to add mentorFan Ren | grad student | 2008 | UF Gainesville | |
(abrication, and Characterization of Zinc Oxide and Gallium Nitride Based Sensors) |
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Publications
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Anderson T, Ren F, Pearton S, et al. (2009) Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices. Sensors (Basel, Switzerland). 9: 4669-94 |
Lee J, Kang BS, Hicks B, et al. (2008) The control of cell adhesion and viability by zinc oxide nanorods. Biomaterials. 29: 3743-9 |
Wang HT, Nafday OA, Haaheim JR, et al. (2008) Toward conductive traces: Dip Pen Nanolithography® of silver nanoparticle-based inks Applied Physics Letters. 93 |
Chen KH, Kang BS, Wang HT, et al. (2008) C-erbB-2 sensing using AlGaNGaN high electron mobility transistors for breast cancer detection Applied Physics Letters. 92 |
Kang BS, Wang HT, Ren F, et al. (2007) Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors Applied Physics Letters. 91: 252103 |
Wang HT, Kang BS, Ren F, et al. (2007) Electrical detection of kidney injury molecule-1 with AlGaN∕GaN high electron mobility transistors Applied Physics Letters. 91: 222101 |
Kang BS, Wang HT, Lele TP, et al. (2007) Prostate specific antigen detection using AlGaNGaN high electron mobility transistors Applied Physics Letters. 91 |
Wang HT, Kang BS, Chancellor TF, et al. (2007) Fast electrical detection of Hg(II) ions with AlGaN/GaN high electron mobility transistors Applied Physics Letters. 91 |
Kang BS, Wang HT, Ren F, et al. (2007) pH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region Applied Physics Letters. 91: 012110 |
Wang H, Anderson TJ, Kang BS, et al. (2007) Stable hydrogen sensors from AlGaN∕GaN heterostructure diodes with TiB2-based Ohmic contacts Applied Physics Letters. 90: 252109 |