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Charles C. Fulton, Ph.D. - Publications

Affiliations: 
North Carolina State University, Raleigh, NC 
Area:
ultra-thin Si oxyitride devices
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30 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 Strzhemechny YM, Bataiev M, Tumakha SP, Goss SH, Hinkle CL, Fulton CC, Lucovsky G, Brillson LJ. Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2- SiO2-Si stacks Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 232-243. DOI: 10.1116/1.2830692  0.677
2007 Fleming L, Fulton CC, Lucovsky G, Rowe JE, Ulrich MD, Lüning J. Local bonding analysis of the valence and conduction band features of TiO2 Journal of Applied Physics. 102. DOI: 10.1063/1.2764004  0.665
2007 Lucovsky G, Fulton CC, Ju BS, Stoute NA, Seo H, Aspnes DE, Lüning J. Corrigendum to: "Suppression of Jahn-Teller term-split band edge states in the X-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3". [Radiat. Phys. Chem. 75 (2006) 1591-1595] (DOI:10.1016/j.radphyschem.2006.05.004) Radiation Physics and Chemistry. 76: 907. DOI: 10.1016/J.Radphyschem.2007.01.001  0.662
2006 Zeman MC, Fulton CC, Lucovsky G, Nemanich RJ, Yang W. Publisher’s Note: “Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy” [J. Appl. Phys. 99, 023519 (2006)] Journal of Applied Physics. 99: 109902. DOI: 10.1063/1.2201707  0.498
2006 Fulton CC, Lucovsky G, Nemanich RJ. Electronic properties of the Zr-ZrO 2-SiO 2-Si (100) gate stack structure Journal of Applied Physics. 99. DOI: 10.1063/1.2181282  0.644
2006 Zeman MC, Fulton CC, Lucovsky G, Nemanich RJ, Yang WC. Thermal stability of TiO 2, ZrO 2, or Hf O 2 on Si(100) by photoelectron emission microscopy Journal of Applied Physics. 99. DOI: 10.1063/1.2163984  0.575
2006 Lucovsky G, Fulton CC, Ju BS, Stoute NA, Tao S, Aspnes DE, Lüning J. Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3 Radiation Physics and Chemistry. 75: 1591-1595. DOI: 10.1016/J.Radphyschem.2006.05.004  0.654
2006 Lucovsky G, Hinkle CL, Fulton CC, Stoute NA, Seo H, Lüning J. Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2 Radiation Physics and Chemistry. 75: 2097-2101. DOI: 10.1016/J.Radphyschem.2005.07.062  0.763
2006 Fulton CC, Edge LF, Lucovsky G, Lüning J. A study of conduction band edge states in complex oxides by X-ray absorption spectroscopy Radiation Physics and Chemistry. 75: 1934-1938. DOI: 10.1016/J.Radphyschem.2005.07.045  0.561
2005 Lucovsky G, Fulton CC, Zhang Y, Zou Y, Luning J, Edge LF, Whitten JL, Nemanich RJ, Ade H, Schlom DG, Afanase'v VV, Stesmans A, Zollner S, Triyoso D, Rogers BR. Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect Ieee Transactions On Device and Materials Reliability. 5: 65-83. DOI: 10.1109/Tdmr.2005.845804  0.65
2005 Coppa BJ, Fulton CC, Kiesel SM, Davis RF, Pandarinath C, Burnette JE, Nemanich RJ, Smith DJ. Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n -type ZnO{0001} surfaces Journal of Applied Physics. 97. DOI: 10.1063/1.1898436  0.388
2005 Lucovsky G, Fulton CC, Zhang Y, Luning J, Edge L, Whitten JL, Nemanich RJ, Schlom DG, Afanase'V VV. Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings Thin Solid Films. 486: 129-135. DOI: 10.1016/J.Tsf.2004.11.233  0.654
2005 Lucovsky G, Hong JG, Fulton CC, Stoute NA, Zou Y, Nemanich RJ, Aspnes DE, Ade H, Schlom DG. Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra Microelectronics Reliability. 45: 827-830. DOI: 10.1016/J.Microrel.2004.11.038  0.779
2005 Lucovsky G, Zhang Y, Fulton CC, Zou Y, Nemanich RJ, Ade H, Whitten JL. Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: Comparisons between experiment and ab initio calculations Journal of Electron Spectroscopy and Related Phenomena. 144: 917-919. DOI: 10.1016/J.Elspec.2005.01.251  0.667
2005 Fulton CC, Lucovsky G, Zhang Y, Zou Y, Nemanich RJ, Ade H, Whitten JL. Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)x(TiOx)1-x and other complex oxides Journal of Electron Spectroscopy and Related Phenomena. 144: 913-916. DOI: 10.1016/J.Elspec.2005.01.098  0.617
2004 Cook TE, Fulton CC, Mecouch WJ, Davis RF, Lucovsky G, Nemanich RJ. Electronic properties of GaN (0001) - Dielectric interfaces International Journal of High Speed Electronics and Systems. 14: 107-125. DOI: 10.1142/S0129156404002260  0.635
2004 Lucovsky G, Hong JG, Fulton CC, Zou Y, Nemanich RJ, Ade H. X-ray absorption spectra for transition metal high-κ dielectrics: Final state differences for intra- and inter-atomic transitions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2132-2138. DOI: 10.1116/1.1771670  0.76
2004 Fulton CC, Cook TE, Lucovsky G, Nemanich RJ. Interface instabilities and electronic properties of ZrO 2 on silicon (100) Journal of Applied Physics. 96: 2665-2673. DOI: 10.1063/1.1776313  0.665
2004 Coppa BJ, Fulton CC, Hartlieb PJ, Davis RF, Rodriguez BJ, Shields BJ, Nemanich RJ. In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces Journal of Applied Physics. 95: 5856-5864. DOI: 10.1063/1.1695596  0.356
2004 Fulton CC, Lucovsky G, Nemanich RJ. Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100) Applied Physics Letters. 84: 580-582. DOI: 10.1063/1.1639944  0.694
2004 Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO 2 (ZrO2) layers sandwiched between thicker SiO2 layers Surface Science. 566: 1185-1189. DOI: 10.1016/J.Susc.2004.06.084  0.745
2004 Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices Microelectronic Engineering. 72: 257-262. DOI: 10.1016/J.Mee.2003.12.047  0.738
2004 Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO 2 layers sandwiched between thicker SiO2 layers Applied Surface Science. 234: 240-245. DOI: 10.1016/J.Apsusc.2004.05.076  0.742
2004 Lucovsky G, Hong JG, Fulton CC, Zou Y, Nemanich RJ, Ade H, Scholm DG, Freeouf JL. Spectroscopic studies of metal high-k dielectrics: Transition metal oxides and silicates, and complex rare earth/transition metal oxides Physica Status Solidi (B) Basic Research. 241: 2221-2235. DOI: 10.1002/Pssb.200404938  0.756
2003 Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. Resonant tunneling in stacked dielectrics: A novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics Extended Abstracts of International Workshop On Gate Insulator, Iwgi 2003. 80-85. DOI: 10.1109/IWGI.2003.159189  0.696
2003 Cook TE, Fulton CC, Mecouch WJ, Davis RF, Lucovsky G, Nemanich RJ. Band offset measurements of the GaN (0001)/HfO 2 interface Journal of Applied Physics. 94: 7155-7158. DOI: 10.1063/1.1625579  0.668
2003 Cook TE, Fulton CC, Mecouch WJ, Davis RF, Lucovsky G, Nemanich RJ. Band offset measurements of the Si3N4/GaN (0001) interface Journal of Applied Physics. 94: 3949-3954. DOI: 10.1063/1.1601314  0.639
2003 Cook TE, Fulton CC, Mecouch WJ, Tracy KM, Davis RF, Hurt EH, Lucovsky G, Nemanich RJ. Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001) Journal of Applied Physics. 93: 3995-4004. DOI: 10.1063/1.1559424  0.622
2003 Lucovsky G, Rayner GB, Zhang Y, Fulton CC, Nemanich RJ, Appel G, Ade H, Whitten JL. Electronic structure of transition metal high-k dielectrics: Interfacial band offset energies for microelectronic devices Applied Surface Science. 212: 563-569. DOI: 10.1016/S0169-4332(03)00055-2  0.792
2002 Fulton CC, Lucovsky G, Nemanich RJ. Electronic states at the interface of Ti-Si oxide on Si(100) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1726-1731. DOI: 10.1116/1.1493785  0.699
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