Year |
Citation |
Score |
2015 |
Xu N, Takeuchi H, Hytha M, Cody NW, Stephenson RJ, Kwak B, Cha SY, Mears RJ, King Liu TJ. Electron mobility enhancement in (100) oxygen-inserted silicon channel Applied Physics Letters. 107. DOI: 10.1063/1.4931431 |
0.462 |
|
2013 |
Chen Y, Nathanael R, Yaung J, Hutin L, King Liu TJ. Reliability of MEM relays for zero leakage logic Proceedings of Spie - the International Society For Optical Engineering. 8614. DOI: 10.1117/12.2005719 |
0.718 |
|
2011 |
Damrongplasit N, Shin C, Kim SH, Vega RA, King Liu TJ. Study of random dopant fluctuation effects in Germanium-source tunnel FETs Ieee Transactions On Electron Devices. 58: 3541-3548. DOI: 10.1109/Ted.2011.2161990 |
0.555 |
|
2011 |
King Liu TJ, Matheu P, Jacobson Z, Kim SH. Steep-subthreshold-slope devices on SOI Proceedings - Ieee International Soi Conference. DOI: 10.1109/SOI.2011.6081702 |
0.712 |
|
2010 |
Lee D, Tran H, King Liu TJ. Characterization of nanometer-scale gap formation Journal of the Electrochemical Society. 157: H94-H98. DOI: 10.1149/1.3253546 |
0.697 |
|
2010 |
Pott V, Kam H, Nathanael R, Jeon J, Alon E, King Liu TJ. Mechanical computing redux: Relays for integrated circuit applications Proceedings of the Ieee. 98: 2076-2094. DOI: 10.1109/JPROC.2010.2063411 |
0.732 |
|
2010 |
Jeon J, Pott V, Kam H, Nathanael R, Alon E, King Liu TJ. Seesaw relay logic and memory circuits Journal of Microelectromechanical Systems. 19: 1012-1014. DOI: 10.1109/Jmems.2010.2049826 |
0.667 |
|
2010 |
Chen F, Spencer M, Nathanael R, Wang C, Fariborzi H, Gupta A, Kam H, Pott V, Jeon J, King Liu TJ, Markovic D, Stojanovic V, Alon E. Demonstration of integrated micro-electro-mechanical switch circuits for VLSI applications Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 53: 150-151. DOI: 10.1109/ISSCC.2010.5434010 |
0.74 |
|
2010 |
Kam H, Alon E, King Liu TJ. A predictive contact reliability model for MEM logic switches Technical Digest - International Electron Devices Meeting, Iedm. 16.4.1-16.4.4. DOI: 10.1109/IEDM.2010.5703375 |
0.631 |
|
2008 |
Sun X, Lu Q, Moroz V, Takeuchi H, Gebara G, Wetzel J, Ikeda S, Shin C, King Liu TJ. Tri-gate bulk MOSFET design for CMOS scaling to the end of the roadmap Ieee Electron Device Letters. 29: 491-493. DOI: 10.1109/Led.2008.919795 |
0.644 |
|
2007 |
Lee D, Seidel T, Dalton J, King Liu TJ. ALD refill of vanometer-scale gaps with high- κ dielectric for advanced CMOS technologies Electrochemical and Solid-State Letters. 10: 257-259. DOI: 10.1149/1.2749331 |
0.7 |
|
2007 |
Sun X, Lu Q, Takeuchi H, Balasubramanian S, King Liu TJ. Selective enhancement of SiO2 etch rate by Ar-ion implantation for improved etch depth control Electrochemical and Solid-State Letters. 10: 89-91. DOI: 10.1149/1.2748634 |
0.55 |
|
2007 |
Padilla A, Shin K, King Liu TJ, Hyun JW, Yoo I, Park Y. Dual-bit gate-sidewall storage FinFET NVM and new method of charge detection Ieee Electron Device Letters. 28: 502-505. DOI: 10.1109/Led.2007.896786 |
0.495 |
|
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