Year |
Citation |
Score |
2018 |
Hansen KR, Peterson JR, Perego A, Shelley M, Olsen CR, Perez LD, Hogg HL, Watt RK, Colton JS. Lead sulfide quantum dots inside ferritin: synthesis and application to photovoltaics Applied Nanoscience. 8: 1687-1699. DOI: 10.1007/S13204-018-0849-Y |
0.304 |
|
2017 |
Olsen C, Embley J, Hansen K, Henrichsen A, Peterson J, Colton JS, Watt R. Tuning Ferritin's Band Gap through Mixed Metal Oxide Nanoparticle Formation. Nanotechnology. PMID 28332485 DOI: 10.1088/1361-6528/Aa68B0 |
0.356 |
|
2017 |
Olsen C, Smith T, Embley J, Maxfield J, Hansen K, Peterson J, Henrichsen A, Erickson S, Buck D, Colton JS, Watt R. Permanganate-Based Synthesis of Manganese Oxide Nanoparticles in Ferritin. Nanotechnology. PMID 28332483 DOI: 10.1088/1361-6528/Aa68Ae |
0.345 |
|
2015 |
Erickson SD, Smith TJ, Moses LM, Watt RK, Colton JS. Non-native Co-, Mn-, and Ti-oxyhydroxide nanocrystals in ferritin for high efficiency solar energy conversion. Nanotechnology. 26: 015703. PMID 25490522 DOI: 10.1088/0957-4484/26/1/015703 |
0.387 |
|
2015 |
Bair N, Hancock JM, Simonson CJ, Thalman SW, Colton JS, Asplund MC, Harrison RG. Assemblies composed of oligothiophene-ruthenium complexes bound to CdSe nanoparticles Journal of Luminescence. 158: 501-509. DOI: 10.1016/J.Jlumin.2014.10.056 |
0.323 |
|
2014 |
Colton JS, Erickson SD, Smith TJ, Watt RK. Sensitive detection of surface- and size-dependent direct and indirect band gap transitions in ferritin. Nanotechnology. 25: 135703. PMID 24583827 DOI: 10.1088/0957-4484/25/13/135703 |
0.374 |
|
2014 |
Park TD, Colton JS, Farrer JK, Yang H, Kim DJ. Annealing-induced change in quantum dot chain formation mechanism Aip Advances. 4. DOI: 10.1063/1.4905053 |
0.344 |
|
2014 |
Yang H, Kim DJ, Colton JS, Park T, Meyer D, Jones AM, Thalman S, Smith D, Clark K, Brown S. Growth and temperature dependent photoluminescence of InGaAs quantum dot chains Applied Surface Science. 296: 8-14. DOI: 10.1016/J.Apsusc.2013.12.176 |
0.525 |
|
2012 |
Colton JS, Meyer D, Clark K, Craft D, Cutler J, Park T, White P. Long-lived electron spins in a modulation doped (100) GaAs quantum well Journal of Applied Physics. 112. DOI: 10.1063/1.4759320 |
0.393 |
|
2012 |
Colton JS, Clark K, Meyer D, Park T, Smith D, Thalman S. Universal scheme for measuring the electron T 1 in semiconductors and application to a lightly-doped n-GaAs sample Solid State Communications. 152: 410-413. DOI: 10.1016/J.Ssc.2011.11.045 |
0.347 |
|
2010 |
Heaton B, Colton JS, Jenson DN, Johnson MJ, Bracker AS. Nuclear effects in Kerr rotation-detected magnetic resonance of electrons in GaAs Solid State Communications. 150: 244-247. DOI: 10.1016/J.Ssc.2009.11.019 |
0.346 |
|
2007 |
Colton JS, Heeb ME, Schroeder P, Stokes A, Wienkes LR, Bracker AS. Anomalous magnetic field dependence of the T1 spin lifetime in a lightly doped GaAs sample Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.205201 |
0.324 |
|
2004 |
Colton JS, Kennedy TA, Bracker AS, Gammon D. Microsecond spin-flip times in n-GaAs measured by time-resolved polarization of photoluminescence Physical Review B - Condensed Matter and Materials Physics. 69: 1213071-1213074. DOI: 10.1103/Physrevb.69.121307 |
0.309 |
|
2004 |
Colton JS, Kennedy TA, Bracker AS, Miller JB, Gammon D. Dependence of optically oriented and detected electron spin resonance on donor concentration in n-GaAs Solid State Communications. 132: 613-616. DOI: 10.1016/J.Ssc.2004.08.039 |
0.38 |
|
2003 |
Colton JS, Kennedy TA, Bracker AS, Gammon D, Miller JB. Optically oriented and detected electron spin resonance in a lightly doped n-GaAs layer Physical Review B - Condensed Matter and Materials Physics. 67: 1653151-1653155. DOI: 10.1103/Physrevb.67.165315 |
0.354 |
|
2002 |
Colton JS, Kennedy TA, Bracker AS, Gammon D. Spin lifetime measurements in MBE-grown GaAs epilayers Physica Status Solidi (B) Basic Research. 233: 445-452. DOI: 10.1002/1521-3951(200210)233:3<445::Aid-Pssb445>3.0.Co;2-J |
0.37 |
|
2002 |
Kennedy TA, Charnock FT, Colton JS, Butler JE, Linares RC, Doering PJ. Single-qubit operations with the nitrogen-vacancy center in diamond Physica Status Solidi (B) Basic Research. 233: 416-426. DOI: 10.1002/1521-3951(200210)233:3<416::Aid-Pssb416>3.0.Co;2-R |
0.349 |
|
2001 |
Colton JS, Yu PY. What determines the emission peak energy of the blue luminescence in highly Mg-doped p-GaN? Applied Physics Letters. 78: 2500-2502. DOI: 10.1063/1.1367904 |
0.555 |
|
2000 |
Colton JS, Yu PY. Selectively excited blue luminescence in heavily Mg doped p-type GaN Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 2000: 11-14. DOI: 10.1109/Sim.2000.939188 |
0.559 |
|
1999 |
Colton JS, Yu PY, Teo KL, Weber ER, Perlin P, Grzegory I, Uchida K. Selective excitation and thermal quenching of the yellow luminescence of GaN Applied Physics Letters. 75: 3273-3275. DOI: 10.1063/1.125322 |
0.384 |
|
1999 |
Colton JS, Yu PY, Teo KL, Perlin P, Weber ER, Grzegory I, Uchida K. Selective excitation of the yellow luminescence of GaN Physica B: Condensed Matter. 273: 75-79. DOI: 10.1016/S0921-4526(99)00410-X |
0.555 |
|
1998 |
Teo KL, Colton JS, Yu PY, Weber ER, Li MF, Liu W, Uchida K, Tokunaga H, Akutsu N, Matsumoto K. An analysis of temperature dependent photoluminescence line shapes in InGaN Applied Physics Letters. 73: 1697-1699. DOI: 10.1063/1.122249 |
0.394 |
|
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