Year |
Citation |
Score |
2020 |
Chen Z, Zhang Y, Chu S, Sun R, Wang J, Chen J, Wei B, Zhang X, Zhou W, Shi Y, Wang Z. Grain Boundary Induced Ultralow Threshold Random Laser in a Single GaTe Flake. Acs Applied Materials & Interfaces. PMID 32337969 DOI: 10.1021/Acsami.0C03419 |
0.302 |
|
2018 |
Liu H, Ma X, Chen Z, Li Q, Lin Z, Liu H, Zhao L, Chu S. Controllable Synthesis of [11-2-2] Faceted InN Nanopyramids on ZnO for Photoelectrochemical Water Splitting. Small (Weinheim An Der Bergstrasse, Germany). e1703623. PMID 29611622 DOI: 10.1002/smll.201703623 |
0.301 |
|
2017 |
Li Q, Ma X, Liu H, Chen Z, Chen H, Chu S. Self-organized Growth of Two-dimensional GaTe Nanosheet on ZnO Nanowires for Heterojunctional Water Splitting Applications. Acs Applied Materials & Interfaces. PMID 28525707 DOI: 10.1021/acsami.7b04199 |
0.339 |
|
2016 |
Wang G, Chen X, Liu S, Wong CP, Chu S. Mechanical Chameleon through Dynamic Real-Time Plasmonic Tuning. Acs Nano. PMID 26760215 DOI: 10.1021/acsnano.5b07472 |
0.393 |
|
2016 |
Liu M, Liu HQ, Chu S, Peng RF, Chu SJ. [0001]-Oriented InN nanoleaves and nanowires: Synthesis, growth mechanism and optical properties Acta Metallurgica Sinica (English Letters). 29: 820-826. DOI: 10.1007/s40195-016-0456-4 |
0.311 |
|
2015 |
Wang B, Ren T, Chen S, Zhang B, Zhang R, Qi J, Chu S, Huang J, Liu J. Resistive switching in Ga- and Sb-doped ZnO single nanowire devices Journal of Materials Chemistry C. 3: 11881-11885. DOI: 10.1039/C5Tc02102B |
0.351 |
|
2014 |
Lai B, Chen Z, Zhang J, Chu S, Chu G, Peng R. Bandgap-engineered CdxZn1-xO nanowires as active regions for green-light-emitting diodes. Nanotechnology. 25: 355201. PMID 25116031 DOI: 10.1088/0957-4484/25/35/355201 |
0.342 |
|
2014 |
Chen Z, Lai B, Zhang J, Wang G, Chu S. Hybrid material based on plasmonic nanodisks decorated ZnO and its application on nanoscale lasers. Nanotechnology. 25: 295203. PMID 24990516 DOI: 10.1088/0957-4484/25/29/295203 |
0.499 |
|
2014 |
Liu H, Chu S, Peng R, Jin B. ZnO three-dimensional hedgehog-like nanostructure: Synthesis, growth mechanism and optical enhancement Applied Physics a: Materials Science and Processing. 116: 39-44. DOI: 10.1007/s00339-014-8476-2 |
0.346 |
|
2013 |
Qi J, Huang J, Paul D, Ren J, Chu S, Liu J. Current self-complianced and self-rectifying resistive switching in Ag-electroded single Na-doped ZnO nanowires. Nanoscale. 5: 2651-4. PMID 23456175 DOI: 10.1039/C3Nr00027C |
0.478 |
|
2013 |
Huang J, Chu S, Kong J, Liu J. ZnO p-n homojunction random laser based on nitrogen doped p-type nanowires 2013 Ieee Photonics Conference, Ipc 2013. 155-156. DOI: 10.1109/IPCon.2013.6656419 |
0.469 |
|
2013 |
Ren J, Yan D, Chu S, Liu J. Non-volatile memory effect of a high-density NiSi nano-dots floating gate memory using single triangular-shaped Si nanowire channel Applied Physics a: Materials Science and Processing. 111: 719-724. DOI: 10.1007/S00339-013-7641-3 |
0.506 |
|
2013 |
Kong J, Chu S, Huang J, Olmedo M, Zhou W, Zhang L, Chen Z, Liu J. Use of distributed Bragg reflectors to enhance Fabry-Pérot lasing in vertically aligned ZnO nanowires Applied Physics a: Materials Science and Processing. 110: 23-28. DOI: 10.1007/S00339-012-7330-7 |
0.741 |
|
2013 |
Huang J, Chu S, Kong J, Zhang L, Schwarz CM, Wang G, Chernyak L, Chen Z, Liu J. ZnO p-n Homojunction Random Laser Diode Based on Nitrogen-Doped p-type Nanowires Advanced Optical Materials. 1: 179-185. DOI: 10.1002/Adom.201200062 |
0.75 |
|
2012 |
Huang J, Li Z, Chu S, Liu J. P-type behavior of Sb doped ZnO from p-n-p memory structure Applied Physics Letters. 101. DOI: 10.1063/1.4769097 |
0.418 |
|
2012 |
Ren J, Hu H, Liu F, Chu S, Liu J. Strain-less directed self-assembly of Si nanocrystals on patterned SiO 2 substrate Journal of Applied Physics. 112. DOI: 10.1063/1.4749269 |
0.477 |
|
2012 |
Chu S, Ren J, Yan D, Huang J, Liu J. Noble metal nanodisks epitaxially formed on ZnO nanorods and their effect on photoluminescence Applied Physics Letters. 101. DOI: 10.1063/1.4739516 |
0.492 |
|
2012 |
Chu S, Wang G. Realization of 479 nm (2.59 eV) emission CdZnO nanorods and the application on solar cells Materials Letters. 85: 149-152. DOI: 10.1016/j.matlet.2012.06.098 |
0.36 |
|
2012 |
Kong J, Chu S, Zuo Z, Ren J, Olmedo M, Liu J. Low-threshold ZnO random lasing in a homojunction diode with embedded double heterostructure Applied Physics a: Materials Science and Processing. 107: 971-975. DOI: 10.1007/S00339-012-6850-5 |
0.745 |
|
2012 |
Liu J, Chu S, Wang G, Zhao J, Kong J, Li L, Ren J. Electrically pumped UV nanowire lasers 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.696 |
|
2011 |
Chu S, Zhao S, Xiong Z, Chu G. MgZnO nanowires based deep ultraviolet heterojunction light emitting diodes. Journal of Nanoscience and Nanotechnology. 11: 8527-31. PMID 22400219 DOI: 10.1166/jnn.2011.4228 |
0.385 |
|
2011 |
Chu S, Wang G, Zhou W, Lin Y, Chernyak L, Zhao J, Kong J, Li L, Ren J, Liu J. Electrically pumped waveguide lasing from ZnO nanowires. Nature Nanotechnology. 6: 506-10. PMID 21725304 DOI: 10.1038/Nnano.2011.97 |
0.752 |
|
2011 |
Chu S, Zhao J, Zuo Z, Kong J, Li L, Liu J. Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light-emitting diode Proceedings of Spie - the International Society For Optical Engineering. 7940. DOI: 10.1117/12.877322 |
0.447 |
|
2011 |
Chu S, Zhao J, Zuo Z, Kong J, Li L, Liu J. Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode Journal of Applied Physics. 109. DOI: 10.1117/12.877322 |
0.674 |
|
2011 |
Schwarz C, Flitsiyan E, Chernyak L, Casian V, Schneck R, Dashevsky Z, Chu S, Liu JL. Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires Journal of Applied Physics. 110. DOI: 10.1063/1.3633224 |
0.378 |
|
2011 |
Wang G, Chu S, Zhan N, Lin Y, Chernyak L, Liu J. ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection Applied Physics Letters. 98. DOI: 10.1063/1.3551628 |
0.721 |
|
2011 |
Lin Y, Shatkhin M, Flitsiyan E, Chernyak L, Dashevsky Z, Chu S, Liu JL. Minority carrier transport in p-ZnO nanowires Journal of Applied Physics. 109. DOI: 10.1063/1.3530732 |
0.4 |
|
2011 |
Chu S, Morshed M, Li L, Huang J, Liu J. Smooth surface, low electron concentration, and high mobility ZnO films on c-plane sapphire Journal of Crystal Growth. 325: 36-40. DOI: 10.1016/J.Jcrysgro.2011.04.036 |
0.418 |
|
2011 |
Wang G, Chu S, Zhan N, Zhou H, Liu J. Synthesis and characterization of Ag-doped p-type ZnO nanowires Applied Physics a: Materials Science and Processing. 103: 951-954. DOI: 10.1007/S00339-011-6390-4 |
0.756 |
|
2010 |
Yang Z, Chu S, Chen WV, Li L, Kong J, Ren J, Yu PKL, Liu J. ZnO:Sb/ZnO:Ga light emitting diode on c-plane sapphire by molecular beam epitaxy Applied Physics Express. 3. DOI: 10.1143/Apex.3.032101 |
0.715 |
|
2008 |
Chu S, Olmedo M, Yang Z, Kong J, Liu J. Electrically pumped ultraviolet ZnO diode lasers on Si Applied Physics Letters. 93. DOI: 10.1063/1.3012579 |
0.769 |
|
2008 |
Kong J, Chu S, Olmedo M, Li L, Yang Z, Liu J. Dominant ultraviolet light emissions in packed ZnO columnar homojunction diodes Applied Physics Letters. 93. DOI: 10.1063/1.2992629 |
0.77 |
|
2008 |
Chu S, Lim JH, Mandalapu LJ, Yang Z, Li L, Liu JL. Sb-doped p-ZnOGa -doped n-ZnO homojunction ultraviolet light emitting diodes Applied Physics Letters. 92. DOI: 10.1063/1.2908968 |
0.546 |
|
2008 |
Mandalapu LJ, Yang Z, Chu S, Liu JL. Ultraviolet emission from Sb-doped p -type ZnO based heterojunction light-emitting diodes Applied Physics Letters. 92. DOI: 10.1063/1.2901018 |
0.534 |
|
2008 |
Chernyak L, Schwarz C, Flitsiyan ES, Chu S, Liu JL, Gartsman K. Electron beam induced current profiling of ZnO p-n homojunctions Applied Physics Letters. 92. DOI: 10.1063/1.2896613 |
0.377 |
|
2008 |
Yang Z, Lim JH, Chu S, Zuo Z, Liu JL. Study of the effect of plasma power on ZnO thin films growth using electron cyclotron resonance plasma-assisted molecular-beam epitaxy Applied Surface Science. 255: 3375-3380. DOI: 10.1016/J.Apsusc.2008.09.068 |
0.383 |
|
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