Year |
Citation |
Score |
2012 |
Lei ZQ, Zeng T, Feng G, Chen PJ, Lai PT, Pong PWT. Angular dependence of low-frequency noise in Al 2 O 3-based magnetic tunnel junction sensors with conetic alloy Ieee Transactions On Magnetics. 48: 3712-3714. DOI: 10.1109/TMAG.2012.2196688 |
0.314 |
|
2012 |
Diao Z, Decorde N, Stamenov P, Rode K, Feng G, Coey JMD. Magnetization processes in micron-scale (CoFe/Pt) n multilayers with perpendicular anisotropy: First-order reversal curves measured by extraordinary Hall effect Journal of Applied Physics. 111. DOI: 10.1063/1.3679143 |
0.582 |
|
2010 |
Diao Z, Nowak ER, Feng G, Coey JM. Magnetic noise in structured hard magnets. Physical Review Letters. 104: 047202. PMID 20366735 DOI: 10.1103/Physrevlett.104.047202 |
0.549 |
|
2010 |
Chen JY, Feng JF, Diao Z, Feng G, Coey JMD, Han XF. Magnetic properties of exchange-biased [Co/Pt]n multilayer with perpendicular magnetic anisotropy Ieee Transactions On Magnetics. 46: 1401-1404. DOI: 10.1109/TMAG.2010.2041192 |
0.544 |
|
2010 |
Feng JF, Chen JY, Venkatesan M, Feng G, Han XF, Coey JMD. Superparamagnetism in MgO-based magnetic tunnel junctions with a thin pinned ferromagnetic electrode Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.205212 |
0.35 |
|
2010 |
Diao Z, Feng JF, Kurt H, Feng G, Coey JMD. Reduced low frequency noise in electron beam evaporated MgO magnetic tunnel junctions Applied Physics Letters. 96. DOI: 10.1063/1.3431620 |
0.49 |
|
2010 |
Feng JF, Diao Z, Feng G, Nowak ER, Coey JMD. Magnetic noise in MgO-based magnetic tunnel junction rings Applied Physics Letters. 96. DOI: 10.1063/1.3295707 |
0.532 |
|
2010 |
Ma QL, Feng JF, Feng G, Oguz K, Han XF, Coey JMD. Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer Journal of Magnetism and Magnetic Materials. 322: 108-111. DOI: 10.1016/j.jmmm.2009.08.038 |
0.535 |
|
2010 |
Polovy H, Guerrero R, Scola J, Pannetier-Lecoeur M, Fermon C, Feng G, Fahy K, Cardoso S, Almeida J, Freitas PP. Noise of MgO-based magnetic tunnel junctions Journal of Magnetism and Magnetic Materials. 322: 1624-1627. DOI: 10.1016/j.jmmm.2009.05.060 |
0.301 |
|
2010 |
Feng G, Feng JF, Coey JMD. The effect of magnetic annealing on barrier asymmetry in Co40Fe40B20/MgO magnetic tunnel junctions Journal of Magnetism and Magnetic Materials. 322: 1456-1459. DOI: 10.1016/j.jmmm.2009.04.059 |
0.336 |
|
2009 |
Feng JF, Feng G, Ma QL, Han XF, Coey JMD. Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions Journal of Magnetism and Magnetic Materials. 321: 3046-3048. DOI: 10.1016/j.jmmm.2009.04.069 |
0.3 |
|
2008 |
Oguz K, Jivrajka P, Venkatesan M, Feng G, Coey JMD. Magnetic dead layers in sputtered Co40 Fe40 B20 films Journal of Applied Physics. 103. DOI: 10.1063/1.2838851 |
0.511 |
|
2007 |
Feng JF, Feng G, Coey JMD, Han XF, Zhan WS. High inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions Applied Physics Letters. 91. DOI: 10.1063/1.2779241 |
0.347 |
|
2007 |
Scola J, Polovy H, Fermon C, Pannetier-Lecœur M, Feng G, Fahy K, Coey JMD. Low-frequency noise in CoFeB/MgO/CoFeB magnetic tunnel junctions Aip Conference Proceedings. 922: 289-293. DOI: 10.1063/1.2759685 |
0.329 |
|
2007 |
Scola J, Polovy H, Fermon C, Pannetier-Lecœur M, Feng G, Fahy K, Coey JMD. Noise in MgO barrier magnetic tunnel junctions with CoFeB electrodes: Influence of annealing temperature Applied Physics Letters. 90. DOI: 10.1063/1.2749433 |
0.314 |
|
2005 |
Nakajima K, Feng G, Coey JMD. Magnetoresistance in magnetic tunnel junctions with amorphous electrodes Ieee Transactions On Magnetics. 41: 2609-2611. DOI: 10.1109/TMAG.2005.854717 |
0.311 |
|
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