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Abhijit Pethe, Ph.D. - Publications

Affiliations: 
2007 Stanford University, Palo Alto, CA 
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14 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Lee A, Pethe A, Joshi A, Bouche G, Koh S, Nimii H, Mujumdar S, Hong Z, Fuchigami N, Lim I, Bodke A, Raymond M, Besser P, Barstow S. Impact of thermal treatments on the schottky barrier height reduction at the Ti-TiOx-Si interface for contact resistance reduction 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348552  0.603
2009 Kuzum D, Pethe AJ, Krishnamohan T, Saraswat KC. Ge (100) and (111) N- and P-FETs with high mobility and low-T mobility characterization Ieee Transactions On Electron Devices. 56: 648-655. DOI: 10.1109/Ted.2009.2014198  0.705
2008 Kuzum D, Krishnamohan T, Pethe A, Oshima Y, Sun Y, McVittie J, Pianetta PA, McIntyre PC, Saraswat KC. Ge interface passivation techniques and their thermal stability Ecs Transactions. 16: 1025-1029. DOI: 10.1149/1.2986865  0.605
2008 Saraswat KC, Kim D, Krishnamohan T, Kuzum D, Okyay AK, Pethe A, Yu HY. Germanium for high performance MOSFETs and optical interconnects Ecs Transactions. 16: 3-12. DOI: 10.1149/1.2986748  0.753
2008 Kuzum D, Krishnamohan T, Pethe AJ, Okyay AK, Oshima Y, Sun Y, McVittie JP, Pianetta PA, McIntyre PC, Saraswat KC. Ge-interface engineering with ozone oxidation for low interface-state density Ieee Electron Device Letters. 29: 328-330. DOI: 10.1109/Led.2008.918272  0.716
2007 Okyay AK, Pethe AJ, Kuzum D, Latif S, Miller DA, Saraswat KC. SiGe optoelectronic metal-oxide semiconductor field-effect transistor. Optics Letters. 32: 2022-4. PMID 17632630 DOI: 10.1364/Ol.32.002022  0.692
2007 Saraswat KC, Kim D, Krishnamohan T, Pethe A. Performance limitations of Si bulk CMOS and alternatives for future ULSI Ecs Transactions. 8: 9-14. DOI: 10.1149/1.2767279  0.753
2007 Okyay AK, Pethe AJ, Kuzum D, Latif S, Miller DAB, Saraswat KC. Novel Si-based CMOS optoelectronic switching device operating in the near infrared Ofc/Nfoec 2007 - Optical Fiber Communication and the National Fiber Optic Engineers Conference 2007. DOI: 10.1109/OFC.2007.4348424  0.648
2007 Kuzum D, Pethe AJ, Krishnamohan T, Oshima Y, Sun Y, McVittie JP, Pianetta PA, McIntyre PC, Saraswat KC. Interface-engineered Ge (100) and (111), N- and P-FETs with high mobility Technical Digest - International Electron Devices Meeting, Iedm. 723-726. DOI: 10.1109/IEDM.2007.4419048  0.642
2007 Pethe A, Saraswat K. High - Mobility, low parasitic resistance Si/Ge/Si heterostructure channel Schottky Source/Drain PMOSFETs 65th Drc Device Research Conference. 55-56. DOI: 10.1109/DRC.2007.4373649  0.448
2007 Okyay AK, Pethe AJ, Kuzum D, Latif S, Miller DAB, Saraswat KC. Novel Si-based optoelectronic switching device: Light to latch Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4452611  0.676
2006 Saraswat KC, Chui CO, Kim D, Krishnamohan T, Pethe A. High mobility materials and novel device structures for high performance nanoscale MOSFETs Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346871  0.754
2006 Saraswat K, Chui CO, Krishnamohan T, Kim D, Nayfeh A, Pethe A. High performance germanium MOSFETs Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 135: 242-249. DOI: 10.1016/J.Mseb.2006.08.014  0.738
2005 Pethe A, Krishnamohan T, Kim D, Oh S, Wong HSP, Nishi Y, Saraswat KC. Investigation of the performance limits of III-V double-gate n-MOSFETs Technical Digest - International Electron Devices Meeting, Iedm. 2005: 605-608.  0.691
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