| Year |
Citation |
Score |
| 2024 |
Wu X, Khan AI, Lee H, Hsu CF, Zhang H, Yu H, Roy N, Davydov AV, Takeuchi I, Bao X, Wong HP, Pop E. Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory. Nature Communications. 15: 13. PMID 38253559 DOI: 10.1038/s41467-023-42792-4 |
0.328 |
|
| 2023 |
Lin Q, Gilardi C, Su SK, Zhang Z, Chen E, Bandaru P, Kummel A, Radu I, Mitra S, Pitner G, Wong HP. Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors. Acs Nano. PMID 37910857 DOI: 10.1021/acsnano.3c04346 |
0.376 |
|
| 2023 |
Oh IK, Khan AI, Qin S, Lee Y, Wong HP, Pop E, Bent SF. Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices. Acs Applied Materials & Interfaces. PMID 37656599 DOI: 10.1021/acsami.3c05822 |
0.316 |
|
| 2022 |
Franklin AD, Hersam MC, Wong HP. Carbon nanotube transistors: Making electronics from molecules. Science (New York, N.Y.). 378: 726-732. PMID 36395207 DOI: 10.1126/science.abp8278 |
0.357 |
|
| 2022 |
Sun Z, Pang CS, Wu P, Hung TYT, Li MY, Liew SL, Cheng CC, Wang H, Wong HP, Li LJ, Radu I, Chen Z, Appenzeller J. Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS. Acs Nano. PMID 36094410 DOI: 10.1021/acsnano.2c05902 |
0.321 |
|
| 2019 |
Akinwande D, Huyghebaert C, Wang CH, Serna MI, Goossens S, Li LJ, Wong HP, Koppens FHL. Graphene and two-dimensional materials for silicon technology. Nature. 573: 507-518. PMID 31554977 DOI: 10.1038/s41586-019-1573-9 |
0.638 |
|
| 2019 |
Desai SB, Fahad HM, Lundberg T, Pitner G, Kim H, Chrzan D, Wong HP, Javey A. Gate Quantum Capacitance Effects in Nanoscale Transistors. Nano Letters. PMID 31532995 DOI: 10.1021/Acs.Nanolett.9B02660 |
0.767 |
|
| 2019 |
Bohaichuk SM, Kumar S, Pitner G, McClellan CJ, Jeong J, Samant MG, Wong HP, Parkin SSP, Williams RS, Pop E. Fast Spiking of a Mott VO2-Carbon Nanotube Composite Device. Nano Letters. PMID 31433663 DOI: 10.1021/Acs.Nanolett.9B01554 |
0.431 |
|
| 2019 |
Bohaichuk SM, Muñoz Rojo M, Pitner G, McClellan CJ, Lian F, Li J, Jeong J, Samant MG, Parkin SSP, Wong HP, Pop E. Localized Triggering of the Insulator-Metal Transition in VO Using a Single Carbon Nanotube. Acs Nano. PMID 31393698 DOI: 10.1021/Acsnano.9B03397 |
0.763 |
|
| 2019 |
Zhou F, Zhou Z, Chen J, Choy TH, Wang J, Zhang N, Lin Z, Yu S, Kang J, Wong HP, Chai Y. Optoelectronic resistive random access memory for neuromorphic vision sensors. Nature Nanotechnology. PMID 31308498 DOI: 10.1038/S41565-019-0501-3 |
0.691 |
|
| 2019 |
Lei T, Shao LL, Zheng YQ, Pitner G, Fang G, Zhu C, Li S, Beausoleil R, Wong HP, Huang TC, Cheng KT, Bao Z. Low-voltage high-performance flexible digital and analog circuits based on ultrahigh-purity semiconducting carbon nanotubes. Nature Communications. 10: 2161. PMID 31089127 DOI: 10.1038/S41467-019-10145-9 |
0.771 |
|
| 2019 |
Pitner G, Hills G, Llinas JP, Persson KM, Park RS, Bokor J, Mitra S, Wong HP. Low-Temperature Side-Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length. Nano Letters. PMID 30677297 DOI: 10.1021/Acs.Nanolett.8B04370 |
0.771 |
|
| 2017 |
Chortos A, Pochorovski I, Lin P, Pitner G, Yan X, Gao TZ, To JWF, Lei T, Will JW, Wong HP, Bao Z. Universal Selective Dispersion of Semiconducting Carbon Nanotubes from Commercial Sources Using a Supramolecular Polymer. Acs Nano. PMID 28528552 DOI: 10.1021/Acsnano.7B01076 |
0.761 |
|
| 2017 |
Park RS, Hills G, Sohn J, Mitra S, Shulaker MM, Wong HP. Hysteresis-Free Carbon Nanotube Field-Effect Transistors. Acs Nano. PMID 28463503 DOI: 10.1021/Acsnano.7B01164 |
0.349 |
|
| 2016 |
Desai SB, Madhvapathy SR, Sachid AB, Llinas JP, Wang Q, Ahn GH, Pitner G, Kim MJ, Bokor J, Hu C, Wong HP, Javey A. MoS2 transistors with 1-nanometer gate lengths. Science (New York, N.Y.). 354: 99-102. PMID 27846499 DOI: 10.1126/Science.Aah4698 |
0.763 |
|
| 2016 |
Chen Z, Li H, Chen HY, Chen B, Liu R, Huang P, Zhang F, Jiang Z, Ye H, Bin Gao, Liu L, Liu X, Kang J, Wong HP, Yu S. Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array. Nanotechnology. 27: 215204. PMID 27094841 DOI: 10.1088/0957-4484/27/21/215204 |
0.676 |
|
| 2016 |
Lei T, Chen X, Pitner G, Wong HP, Bao Z. Removable and Recyclable Conjugated Polymers for Highly Selective and High-Yield Dispersion and Release of Low-Cost Carbon Nanotubes. Journal of the American Chemical Society. PMID 26731376 DOI: 10.1021/Jacs.5B12797 |
0.729 |
|
| 2015 |
Tian H, Zhao H, Wang XF, Xie QY, Chen HY, Mohammad MA, Li C, Mi WT, Bie Z, Yeh CH, Yang Y, Wong HP, Chiu PW, Ren TL. In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device. Advanced Materials (Deerfield Beach, Fla.). PMID 26500160 DOI: 10.1002/Adma.201503125 |
0.356 |
|
| 2015 |
Ahn C, Fong SW, Kim Y, Lee S, Sood A, Neumann CM, Asheghi M, Goodson KE, Pop E, Wong HP. Energy-Efficient Phase-Change Memory with Graphene as Thermal Barrier. Nano Letters. PMID 26308280 DOI: 10.1021/Acs.Nanolett.5B02661 |
0.725 |
|
| 2015 |
Li L, Chen X, Wang CH, Cao J, Lee S, Tang A, Ahn C, Roy SS, Arnold MS, Wong HP. Vertical and Lateral Cu Transport through Graphene Layers. Acs Nano. PMID 26222951 DOI: 10.1021/Acsnano.5B03038 |
0.707 |
|
| 2015 |
Lei T, Pitner G, Chen X, Hong G, Park S, Hayoz P, Weitz RT, Wong HP, Bao Z. Dispersion of High-Purity Semiconducting Arc-Discharged Carbon Nanotubes Using Backbone Engineered Diketopyrrolopyrrole (DPP)-Based Polymers Advanced Electronic Materials. 2: 1500299. DOI: 10.1002/Aelm.201500299 |
0.756 |
|
| 2012 |
Zhang J, Lin A, Patil N, Wei H, Wei L, Wong HP, Mitra S. Carbon Nanotube Robust Digital VLSI Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 31: 453-471. DOI: 10.1109/Tcad.2012.2187527 |
0.307 |
|
| 2011 |
Chai Y, Wu Y, Takei K, Chen H, Yu S, Chan PCH, Javey A, Wong HP. Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon Ieee Transactions On Electron Devices. 58: 3933-3939. DOI: 10.1109/Ted.2011.2164615 |
0.346 |
|
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