Year |
Citation |
Score |
2003 |
Cheng K, Lyding JW. Corrections to "An analytical model to project MOS transistor lifetime improvement by deuterium passivation of interface traps" Ieee Electron Device Letters. 24: 710-710. DOI: 10.1109/Led.2003.820017 |
0.315 |
|
2003 |
Cheng K, Lyding JW. An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps Ieee Electron Device Letters. 24: 655-657. DOI: 10.1109/Led.2003.817377 |
0.565 |
|
2003 |
Cheng K, Lyding JW. Hot-carrier stress effects on gate-induced-drain leakage current in n-channel MOSFETs studied by hydrogen/deuterium isotope effect Ieee Electron Device Letters. 24: 487-489. DOI: 10.1109/Led.2003.815003 |
0.586 |
|
2002 |
Cheng K, Lee J, Hess K, Lyding JW, Kim YK, Kim YW, Suh KP. Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces Ieee Transactions On Electron Devices. 49: 529-531. DOI: 10.1109/16.987128 |
0.623 |
|
2001 |
Cheng K, Lee J, Chen Z, Shah SA, Hess K, Leburton JP, Lyding JW. Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1119-1123. DOI: 10.1116/1.1385687 |
0.58 |
|
2001 |
Cheng K, Hess K, Lyding JW. Deuterium passivation of interface traps in MOS devices Ieee Electron Device Letters. 22: 441-443. DOI: 10.1109/55.944333 |
0.593 |
|
2001 |
Chen Z, Cheng K, Lee J, Lyding JW, Hess K, Chetlur S. Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study Ieee Transactions On Electron Devices. 48: 813-815. DOI: 10.1109/16.915732 |
0.527 |
|
2001 |
Hess K, Haggag A, McMahon W, Cheng K, Lee J, Lyding J. The physics of determining chip reliability Ieee Circuits and Devices Magazine. 17: 33-38. DOI: 10.1109/101.933789 |
0.519 |
|
2001 |
Cheng K, Hess K, Lyding JW. Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces Journal of Applied Physics. 90: 6536-6538. DOI: 10.1063/1.1412265 |
0.579 |
|
2001 |
Cheng K, Leburton JP, Hess K, Lyding JW. On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 79: 863-865. DOI: 10.1063/1.1389318 |
0.601 |
|
2001 |
Cheng K, Lee J, Hess K, Lyding JW. Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect Applied Physics Letters. 78: 1882-1884. DOI: 10.1063/1.1359143 |
0.608 |
|
2001 |
Cheng K, Lee J, Chen Z, Shah S, Hess K, Lyding JW, Kim YK, Kim YW, Suh KP. Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices Microelectronic Engineering. 56: 353-358. DOI: 10.1016/S0167-9317(01)00572-X |
0.558 |
|
2000 |
Jinju L, Cheng K, Chen Z, Hess K, Lyding JW, Young-Kwang K, Seung L, Young-Wug K, Kwang-Pyuk S. Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors Ieee Electron Device Letters. 21: 221-223. DOI: 10.1109/55.841302 |
0.558 |
|
2000 |
Cheng K, Lee J, Lyding JW. Experimental evidence of Si-H bond energy variation at SiO2-Si interface Applied Physics Letters. 77: 3388-3390. DOI: 10.1063/1.1327277 |
0.345 |
|
2000 |
Cheng K, Lee J, Lyding JW. Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices Applied Physics Letters. 77: 2358-2360. DOI: 10.1063/1.1317546 |
0.423 |
|
1993 |
Skala SL, Hubacek JS, Tucker JR, Lyding JW, Chou ST, Cheng K. Structure of GaAs(100)-c(8 x 2) determined by scanning tunneling microscopy. Physical Review. B, Condensed Matter. 48: 9138-9141. PMID 10007140 |
0.42 |
|
1993 |
Skala SL, Hubacek JS, Tucker JR, Lyding JW, Chou ST, Cheng KY. Structure of GaAs(100)-c(8×2) determined by scanning tunneling microscopy Physical Review B. 48: 9138-9141. DOI: 10.1103/PhysRevB.48.9138 |
0.447 |
|
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