Year |
Citation |
Score |
2016 |
Chaudhuri S, Bhoj AN, Bhattacharya D, Jha NK. Fast FinFET Device Simulation under Process-Voltage Variations Using an Assisted Speed-Up Mechanism Proceedings of the Ieee International Conference On Vlsi Design. 2016: 300-305. DOI: 10.1109/VLSID.2016.34 |
0.652 |
|
2015 |
Bhattacharya D, Bhoj AN, Jha NK. Design of efficient content addressable memories in high-performance FinFET technology Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 23: 963-967. DOI: 10.1109/Tvlsi.2014.2319192 |
0.568 |
|
2015 |
Joshi RV, Kim K, Kanj R, Bhoj AN, Ziegler MM, Oldiges P, Kerber P, Wong R, Hook T, Saroop S, Radens C, Yeh CC. Super fast physics-based methodology for accurate memory yield prediction Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 23: 534-543. DOI: 10.1109/Tvlsi.2014.2313815 |
0.446 |
|
2014 |
Bhoj AN, Jha NK. Parasitics-aware design of symmetric and asymmetric gate-workfunction finFET SRAMs Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 22: 548-561. DOI: 10.1109/Tvlsi.2013.2252031 |
0.488 |
|
2013 |
Bhoj AN, Jha NK. Design of logic gates and flip-flops in high-performance finFET technology Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 21: 1975-1988. DOI: 10.1109/Tvlsi.2012.2227850 |
0.557 |
|
2013 |
Bhoj AN, Joshi RV, Jha NK. 3-D-TCAD-based parasitic capacitance extraction for emerging multigate devices and circuits Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 21: 2094-2105. DOI: 10.1109/Tvlsi.2012.2227848 |
0.551 |
|
2013 |
Bhoj AN, Joshi RV, Jha NK. Efficient methodologies for 3-D TCAD modeling of emerging devices and circuits Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 32: 47-58. DOI: 10.1109/TCAD.2012.2210421 |
0.377 |
|
2012 |
Bhoj AN, Simsir MO, Jha NK. Fault models for logic circuits in the multigate era Ieee Transactions On Nanotechnology. 11: 182-193. DOI: 10.1109/Tnano.2011.2169807 |
0.585 |
|
2012 |
Bhoj AN, Joshi RV. Transport-analysis-based 3-D TCAD capacitance extraction for sub-32-nm SRAM structures Ieee Electron Device Letters. 33: 158-160. DOI: 10.1109/LED.2011.2175359 |
0.305 |
|
2011 |
Bhoj AN, Jha NK. Design of ultra-low-leakage logic gates and flip-flops in high-performance FinFET technology Proceedings of the 12th International Symposium On Quality Electronic Design, Isqed 2011. 695-702. DOI: 10.1109/ISQED.2011.5770805 |
0.397 |
|
2010 |
Bhoj AN, Jha NK. Gated-diode FinFET DRAMs: Device and circuit design-considerations Acm Journal On Emerging Technologies in Computing Systems. 6. DOI: 10.1145/1877745.1877746 |
0.579 |
|
2010 |
Simsir MO, Bhoj A, Jha NK. Fault modeling for FinFET circuits Proceedings of the 2010 Ieee/Acm International Symposium On Nanoscale Architectures, Nanoarch 2010. 41-46. DOI: 10.1109/NANOARCH.2010.5510927 |
0.604 |
|
2010 |
Mishra P, Bhoj AN, Jha NK. Die-level leakage power analysis of FinFET circuits considering process variations Proceedings of the 11th International Symposium On Quality Electronic Design, Isqed 2010. 347-355. DOI: 10.1109/ISQED.2010.5450554 |
0.446 |
|
2009 |
Bhoj AN, Jha NK. Pragmatic design of gated-diode finFET DRAMs Proceedings - Ieee International Conference On Computer Design: Vlsi in Computers and Processors. 390-397. DOI: 10.1109/ICCD.2009.5413127 |
0.503 |
|
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