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Sansaptak Dasgupta, Ph.D. - Publications

Affiliations: 
2011 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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20 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Devabharathi N, Mondal SK, Dasgupta S. Inkjet-printed co-continuous mesoporous oxides for high-current power transistors. Nanoscale. PMID 31310254 DOI: 10.1039/c9nr04876f  0.341
2018 Garlapati SK, Marques GC, Gebauer J, Dehm S, Bruns M, Winterer M, Tahoori M, Aghassi J, Hahn H, Dasgupta S. High performance printed oxide field-effect transistors processed using photonic curing. Nanotechnology. PMID 29553481 DOI: 10.1088/1361-6528/Aab7A2  0.3
2013 Dasgupta S, Lu J, Nidhi, Raman A, Hurni C, Gupta G, Speck JS, Mishra UK. Estimation of hot electron relaxation time in GaN using hot electron transistors Applied Physics Express. 6. DOI: 10.7567/Apex.6.034002  0.713
2012 Dasgupta S, Nidhi, Wu F, Speck JS, Mishra UK. Growth and characterization of n-polar GaN films on Si(111) by plasma assisted molecular beam epitaxy Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.115503  0.563
2012 Nidhi, Dasgupta S, Lu J, Speck JS, Mishra UK. Scaled self-aligned N-Polar GaN/AlGaN MIS-HEMTs with f T of 275 GHz Ieee Electron Device Letters. 33: 961-963. DOI: 10.1109/Led.2012.2194130  0.668
2012 Denninghoff DJ, Dasgupta S, Lu J, Keller S, Mishra UK. Design of high-aspect-ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High f max Ieee Electron Device Letters. 33: 785-787. DOI: 10.1109/Led.2012.2191134  0.739
2012 Nidhi, Dasgupta S, Lu J, Speck JS, Mishra UK. Self-aligned N-Polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm Ieee Electron Device Letters. 33: 794-796. DOI: 10.1109/Led.2012.2190965  0.654
2011 Dasgupta S, Nidhi, Choi S, Wu F, Speck JS, Mishra UK. Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy Applied Physics Express. 4: 45502. DOI: 10.1143/Apex.4.045502  0.366
2011 Singisetti U, Wong MH, Dasgupta S, Speck JS, Mishra UK. Enhancement-mode N-polar GaN metal-insulator-semiconductor field effect transistors with current gain cutoff frequency of 120GHz Applied Physics Express. 4. DOI: 10.1143/Apex.4.024103  0.478
2011 Kaun SW, Wong MH, Dasgupta S, Choi S, Chung R, Mishra UK, Speck JS. Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors Applied Physics Express. 4: 24101. DOI: 10.1143/Apex.4.024101  0.399
2011 Nidhi, Dasgupta S, Keller S, Speck JS, Mishra UK. N-Polar GaN/AlN MIS-HEMT With $f_{\rm MAX}$ of 204 GHz for Ka-Band Applications Ieee Electron Device Letters. 32: 1683-1685. DOI: 10.1109/Led.2011.2168558  0.523
2011 Dasgupta S, Nidhi, Raman A, Speck JS, Mishra UK. Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base Ieee Electron Device Letters. 32: 1212-1214. DOI: 10.1109/Led.2011.2158980  0.636
2011 Kolluri S, Brown DF, Wong MH, Dasgupta S, Keller S, DenBaars SP, Mishra UK. RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation Ieee Electron Device Letters. 32: 134-136. DOI: 10.1109/Led.2010.2090410  0.735
2011 Singisetti U, Wong MH, Dasgupta S, Nidhi, Swenson B, Thibeault BJ, Speck JS, Mishra UK. Enhancement-mode n-polar GaN MISFETs with self-aligned source/drain regrowth Ieee Electron Device Letters. 32: 137-139. DOI: 10.1109/Led.2010.2090125  0.729
2011 Nidhi, Dasgupta S, Brown DF, Singisetti U, Keller S, Speck JS, Mishra UK. Self-aligned technology for N-polar GaN/Al(Ga)N MIS-HEMTs Ieee Electron Device Letters. 32: 33-35. DOI: 10.1109/Led.2010.2086427  0.484
2010 Nidhi, Dasgupta S, Pei Y, Swenson BL, Keller S, Speck JS, Mishra UK. N-polar GaN/AlN MIS-HEMT for ka-band power applications Ieee Electron Device Letters. 31: 1437-1439. DOI: 10.1109/Led.2010.2078791  0.769
2010 Dasgupta S, Nidhi, Brown DF, Wu F, Keller S, Speck JS, Mishra UK. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth Applied Physics Letters. 96: 143504. DOI: 10.1063/1.3374331  0.42
2009 Dasgupta S, Wu F, Speck JS, Mishra UK. Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy Applied Physics Letters. 94: 151906. DOI: 10.1063/1.3118593  0.378
2008 Raman A, Dasgupta S, Rajan S, Speck JS, Mishra UK. AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit Japanese Journal of Applied Physics. 47: 3359-3361. DOI: 10.1143/Jjap.47.3359  0.725
2008 Chu R, Poblenz C, Wong MH, Dasgupta S, Rajan S, Pei Y, Recht F, Shen L, Speck JS, Mishra UK. Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF 4-treatment Applied Physics Express. 1: 0611011-0611013. DOI: 10.1143/Apex.1.061101  0.695
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