Year |
Citation |
Score |
2007 |
Ponczak BH, Oliver JD, Cho S, Rubloff GW. In-situ mass spectrometry for chemical identification in SiC epitaxial deposition Materials Science Forum. 556: 121-124. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.121 |
0.553 |
|
2005 |
Cho S, Janiak DS, Rubloff GW, Aumer ME, Thomson DB, Partlow DP. In situ chemical sensing in AlGaNGaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 2007-2013. DOI: 10.1116/1.2037707 |
0.6 |
|
2005 |
Cho S, Rubloff GW, Aumer ME, Thomson DB, Partlow DP. Real-time material quality prediction, fault detection, and contamination control in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1849-1855. DOI: 10.1116/1.2006110 |
0.568 |
|
2005 |
Cho S, Rubloff GW, Aumer ME, Thomson DB, Partlow DP, Parikh R, Adomaitis RA. In situ chemical sensing in AlGaNGaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time prediction of product crystal quality and advanced process control Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1386-1397. DOI: 10.1116/1.1993616 |
0.577 |
|
2004 |
Cho S, Henn-Lecordier L, Liu Y, Rubloff GW. In situ mass spectrometry in a 10 torr W chemical vapor deposition process for film thickness metrology and real-time advanced process control Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 880-887. DOI: 10.1116/1.1695332 |
0.607 |
|
2004 |
Cho S, Lei W, Melvin A, Rubloff GW. Dynamic simulation and optimization of Cu CVD unit process for environmentally benign manufacturing Ieee Transactions On Semiconductor Manufacturing. 17: 455-469. DOI: 10.1109/Tsm.2004.831942 |
0.574 |
|
2002 |
Xu Y, Gougousi T, Henn-Lecordier L, Liu Y, Cho S, Rubloff GW. Thickness metrology and end point control in W chemical vapor deposition process from SiH4/WF6 using in situ mass spectrometry Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2351-2360. DOI: 10.1116/1.1520555 |
0.616 |
|
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