Year |
Citation |
Score |
2012 |
Patil A, Koybasi O, Lopez G, Foxe M, Childres I, Roecker C, Boguski J, Gu J, Bolen ML, Capano MA, Jovanovic I, Ye P, Chen YP, Bolen MA. Graphene field effect transistor as radiation sensor Ieee Nuclear Science Symposium Conference Record. 455-459. DOI: 10.1109/NSSMIC.2011.6154538 |
0.662 |
|
2012 |
Shen T, Neal AT, Bolen ML, Gu JJ, Engel LW, Capano MA, Ye PD. Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001) Journal of Applied Physics. 111. DOI: 10.1063/1.3675464 |
0.718 |
|
2012 |
Ye PD, Capano M, Shen T, Wu Y, Bolen ML. Magneto-transport on epitaxial graphene Nanoscience and Technology. 57: 161-188. DOI: 10.1007/978-3-642-22984-8__6 |
0.448 |
|
2011 |
Bolen ML, Colby R, Stach EA, Capano MA. Graphene formation on step-free 4H-SiC(0001) Journal of Applied Physics. 110. DOI: 10.1063/1.3644933 |
0.727 |
|
2011 |
Colby R, Bolen ML, Capano MA, Stach EA. Amorphous interface layer in thin graphite films grown on the carbon face of SiC Applied Physics Letters. 99. DOI: 10.1063/1.3635786 |
0.68 |
|
2010 |
Ye PD, Neal AT, Shen T, Gu JJ, Bolen ML, Capano MA. Atomic-layer-deposited high-k dielectric integration on epitaxial graphene Ecs Transactions. 33: 459-466. DOI: 10.1149/1.3481634 |
0.713 |
|
2010 |
Prakash G, Bolen ML, Colby R, Stach EA, Capano MA, Reifenberger R. Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC New Journal of Physics. 12. DOI: 10.1088/1367-2630/12/12/125009 |
0.732 |
|
2010 |
Prakash G, Capano MA, Bolen ML, Zemlyanov D, Reifenberger RG. AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H-SiC (0001̄) Carbon. 48: 2383-2393. DOI: 10.1016/J.Carbon.2010.02.026 |
0.723 |
|
2010 |
Bolen ML, Shen T, Gu JJ, Colby R, Stach EA, Ye PD, Capano MA. Empirical study of hall bars on few-layer graphene on C-face 4H-SiC Journal of Electronic Materials. 39: 2696-2701. DOI: 10.1007/S11664-010-1375-1 |
0.672 |
|
2009 |
Bolen ML, Harrison SE, Biedermann LB, Capano MA. Graphene formation mechanisms on 4H-SiC(0001) Physical Review B. 80: 115433. DOI: 10.1103/Physrevb.80.115433 |
0.703 |
|
2009 |
Biedermann LB, Bolen ML, Capano MA, Zemlyanov D, Reifenberger RG. Insights into few-layer epitaxial graphene growth on 4H-SiC (000 1̄) substrates from STM studies Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.125411 |
0.734 |
|
2009 |
Shen T, Gu JJ, Xu M, Wu YQ, Bolen ML, Capano MA, Engel LW, Ye PD. Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) Applied Physics Letters. 95. DOI: 10.1063/1.3254329 |
0.742 |
|
2009 |
Bolen ML, Capano MA. Defect analysis of barrier height inhomogeneity in titanium 4H-SiC schottky barrier diodes Journal of Electronic Materials. 38: 574-580. DOI: 10.1007/S11664-008-0647-5 |
0.61 |
|
Show low-probability matches. |