| Year |
Citation |
Score |
| 2019 |
Hwang S, Porter SH, Laursen AB, Yang H, Li M, Manichev V, Calvinho KUD, Amarasinghe V, Greenblatt M, Garfunkel E, Dismukes GC. Creating stable interfaces between reactive materials: titanium nitride protects photoabsorber–catalyst interface in water-splitting photocathodes Journal of Materials Chemistry A. 7: 2400-2411. DOI: 10.1039/C8Ta12186A |
0.398 |
|
| 2019 |
Frederick RT, Saha S, Trey Diulus J, Luo F, Amador JM, Li M, Park D, Garfunkel EL, Keszler DA, Herman GS. Thermal and radiation chemistry of butyltin oxo hydroxo: A model inorganic photoresist Microelectronic Engineering. 205: 26-31. DOI: 10.1016/J.Mee.2018.11.011 |
0.368 |
|
| 2018 |
Li X, Lee SS, Li M, Ermakov A, Medina-Ramos J, Fister TT, Amarasinghe V, Gustafsson T, Garfunkel E, Fenter P, Feldman LC. Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures Applied Physics Letters. 113: 131601. DOI: 10.1063/1.5048220 |
0.352 |
|
| 2017 |
Woods KN, Thomas MC, Mitchson G, Ditto J, Xu C, Kayal D, Frisella KC, Gustafsson T, Garfunkel E, Chabal YJ, Johnson DC, Page CJ. Non-uniform Composition Profiles in Amorphous Multi-Metal Oxide Thin Films Deposited from Aqueous Solution. Acs Applied Materials & Interfaces. PMID 28959877 DOI: 10.1021/Acsami.7B12462 |
0.407 |
|
| 2017 |
Biedron AB, Garfunkel EL, Castner EW, Rangan S. Ionic liquid ultrathin films at the surface of Cu(100) and Au(111). The Journal of Chemical Physics. 146: 054704. PMID 28178800 DOI: 10.1063/1.4975101 |
0.32 |
|
| 2017 |
Li X, Ermakov A, Amarasinghe V, Garfunkel E, Gustafsson T, Feldman LC. Oxidation induced stress in SiO2/SiC structures Applied Physics Letters. 110: 141604. DOI: 10.1063/1.4979544 |
0.338 |
|
| 2017 |
Patel MA, Luo F, Savaram K, Kucheryavy P, Xie Q, Flach C, Mendelsohn R, Garfunkel E, Lockard JV, He H. P and S dual-doped graphitic porous carbon for aerobic oxidation reactions: Enhanced catalytic activity and catalytic sites Carbon. 114: 383-392. DOI: 10.1016/J.Carbon.2016.11.064 |
0.301 |
|
| 2016 |
Rangan S, Kalyanikar M, Duan J, Liu G, Bartynski RA, Andrei EY, Feldman L, Garfunkel E. Nanoscale Internal Fields in a Biased Graphene-Insulator-Semiconductor Structure. The Journal of Physical Chemistry Letters. 3434-3439. PMID 27530545 DOI: 10.1021/Acs.Jpclett.6B01806 |
0.354 |
|
| 2016 |
Patel MA, Luo F, Khoshi MR, Rabie E, Zhang Q, Flach CR, Mendelsohn R, Garfunkel E, Szostak M, He H. P-Doped Porous Carbon as Metal Free Catalysts for Selective Aerobic Oxidation with an Unexpected Mechanism. Acs Nano. PMID 26751165 DOI: 10.1021/Acsnano.5B07054 |
0.324 |
|
| 2016 |
Smith PF, Deibert BJ, Kaushik S, Gardner G, Hwang S, Wang H, Al-Sharab JF, Garfunkel E, Fabris L, Li J, Dismukes GC. Coordination Geometry and Oxidation State Requirements of Corner-Sharing MnO6 Octahedra for Water Oxidation Catalysis: An Investigation of Manganite (γ-MnOOH) Acs Catalysis. 6: 2089-2099. DOI: 10.1021/Acscatal.6B00099 |
0.308 |
|
| 2015 |
Fairley KC, Merrill DR, Woods KN, Ditto J, Xu C, Oleksak RP, Gustafsson T, Johnson DW, Garfunkel E, Herman GS, Johnson DC, Page CJ. Non-uniform Composition Profiles in Inorganic Thin Films from Aqueous Solutions. Acs Applied Materials & Interfaces. PMID 26671578 DOI: 10.1021/Acsami.5B09692 |
0.408 |
|
| 2015 |
Patel M, Feng W, Savaram K, Khoshi MR, Huang R, Sun J, Rabie E, Flach C, Mendelsohn R, Garfunkel E, He H. Graphene: Microwave Enabled One-Pot, One-Step Fabrication and Nitrogen Doping of Holey Graphene Oxide for Catalytic Applications (Small 27/2015). Small (Weinheim An Der Bergstrasse, Germany). 11: 3357. PMID 26172417 DOI: 10.1002/Smll.201570159 |
0.538 |
|
| 2015 |
Patel M, Feng W, Savaram K, Khoshi MR, Huang R, Sun J, Rabie E, Flach C, Mendelsohn R, Garfunkel E, He H. Microwave Enabled One-Pot, One-Step Fabrication and Nitrogen Doping of Holey Graphene Oxide for Catalytic Applications. Small (Weinheim An Der Bergstrasse, Germany). 11: 3358-68. PMID 25683019 DOI: 10.1002/Smll.201403402 |
0.575 |
|
| 2015 |
Xu Y, Xu C, Liu G, Lee HD, Shubeita SM, Jiao C, Modic A, Ahyi AC, Sharma Y, Wan A, Williams JR, Gustafsson T, Dhar S, Garfunkel EL, Feldman LC. Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface Journal of Applied Physics. 118. DOI: 10.1063/1.4937400 |
0.371 |
|
| 2015 |
Savaram K, Kalyanikar M, Patel M, Brukh R, Flach CR, Huang R, Khoshi MR, Mendelsohn R, Wang A, Garfunkel E, He H. Synergy of oxygen and a piranha solution for eco-friendly production of highly conductive graphene dispersions Green Chemistry. 17: 869-881. DOI: 10.1039/C4Gc01752H |
0.31 |
|
| 2014 |
Oleksak RP, Ruther RE, Luo F, Fairley KC, Decker SR, Stickle WF, Johnson DW, Garfunkel EL, Herman GS, Keszler DA. Chemical and structural investigation of high-resolution patterning with HafSO(x). Acs Applied Materials & Interfaces. 6: 2917-21. PMID 24502280 DOI: 10.1021/Am405463U |
0.381 |
|
| 2014 |
Xu Y, Zhu X, Lee HD, Xu C, Shubeita SM, Ahyi AC, Sharma Y, Williams JR, Lu W, Ceesay S, Tuttle BR, Wan A, Pantelides ST, Gustafsson T, Garfunkel EL, et al. Atomic state and characterization of nitrogen at the SiC/SiO2 interface Journal of Applied Physics. 115. DOI: 10.1063/1.4861626 |
0.411 |
|
| 2014 |
Feng W, Rangan S, Cao Y, Galoppini E, Bartynski RA, Garfunkel E. Energy level alignment of polythiophene/ZnO hybrid solar cells Journal of Materials Chemistry A. 2: 7034-7044. DOI: 10.1039/C4Ta00937A |
0.61 |
|
| 2014 |
Chen Z, Xu Y, Garfunkel E, Feldman LC, Buyuklimanli T, Ou W, Serfass J, Wan A, Dhar S. Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation Applied Surface Science. 317: 593-597. DOI: 10.1016/J.Apsusc.2014.08.181 |
0.349 |
|
| 2013 |
Robinson DM, Go YB, Mui M, Gardner G, Zhang Z, Mastrogiovanni D, Garfunkel E, Li J, Greenblatt M, Dismukes GC. Photochemical water oxidation by crystalline polymorphs of manganese oxides: structural requirements for catalysis. Journal of the American Chemical Society. 135: 3494-501. PMID 23391134 DOI: 10.1021/Ja310286H |
0.37 |
|
| 2013 |
Sharma YK, Ahyi AC, Isaacs-Smith T, Modic A, Park M, Xu Y, Garfunkel EL, Dhar S, Feldman LC, Williams JR. High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer Ieee Electron Device Letters. 34: 175-177. DOI: 10.1109/Led.2012.2232900 |
0.368 |
|
| 2013 |
Feng W, Wan AS, Garfunkel E. Interfacial bonding and morphological control of electropolymerized polythiophene films on ZnO Journal of Physical Chemistry C. 117: 9852-9863. DOI: 10.1021/Jp400871G |
0.579 |
|
| 2012 |
Sharma YK, Ahyi AC, Issacs-Smith T, Shen X, Pantelides ST, Zhu X, Rozen J, Feldman LC, Williams JR, Xu Y, Garfunkel E. The effects of phosphorus at the SiO 2/4H-SiC interface Materials Science Forum. 717: 743-746. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.743 |
0.391 |
|
| 2012 |
Ivanoff Reyes P, Ku CJ, Duan Z, Xu Y, Garfunkel E, Lu Y. Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector Applied Physics Letters. 101. DOI: 10.1063/1.4737648 |
0.373 |
|
| 2012 |
Duan Z, Du Pasquier A, Lu Y, Xu Y, Garfunkel E. Effects of Mg composition on open circuit voltage of Cu2OMg xZn1-xO heterojunction solar cells Solar Energy Materials and Solar Cells. 96: 292-297. DOI: 10.1016/J.Solmat.2011.09.047 |
0.373 |
|
| 2011 |
Goncharova LV, Dalponte M, Feng T, Gustafsson T, Garfunkel E, Lysaght PS, Bersuker G. Diffusion and interface growth in hafnium oxide and silicate ultrathin films on Si(001) Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.115329 |
0.425 |
|
| 2011 |
Ku CJ, Duan Z, Reyes PI, Lu Y, Xu Y, Hsueh CL, Garfunkel E. Effects of Mg on the electrical characteristics and thermal stability of Mgx Zn1-x O thin film transistors Applied Physics Letters. 98. DOI: 10.1063/1.3567533 |
0.327 |
|
| 2010 |
Lee B, Chen Y, Duerr F, Mastrogiovanni D, Garfunkel E, Andrei EY, Podzorov V. Modification of electronic properties of graphene with self-assembled monolayers. Nano Letters. 10: 2427-32. PMID 20503977 DOI: 10.1021/Nl100587E |
0.316 |
|
| 2010 |
Vittadello M, Gorbunov MY, Mastrogiovanni DT, Wielunski LS, Garfunkel EL, Guerrero F, Kirilovsky D, Sugiura M, Rutherford AW, Safari A, Falkowski PG. Photoelectron generation by photosystem II core complexes tethered to gold surfaces. Chemsuschem. 3: 471-5. PMID 20209512 DOI: 10.1002/Cssc.200900255 |
0.357 |
|
| 2010 |
Lee B, Wan A, Mastrogiovanni D, Anthony JE, Garfunkel E, Podzorov V. Origin of the bias stress instability in single-crystal organic field-effect transistors Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.085302 |
0.317 |
|
| 2010 |
Zhu X, Lee HD, Feng T, Ahyi AC, Mastrogiovanni D, Wan A, Garfunkel E, Williams JR, Gustafsson T, Feldman LC. Structure and stoichiometry of (0001) 4H-SiC/oxide interface Applied Physics Letters. 97. DOI: 10.1063/1.3481672 |
0.363 |
|
| 2010 |
Chambers SA, Engelhard MH, Shutthanandan V, Zhu Z, Droubay TC, Qiao L, Sushko PV, Feng T, Lee HD, Gustafsson T, Garfunkel E, Shah AB, Zuo JM, Ramasse QM. Instability, intermixing and electronic structure at the epitaxial LaAlO3SrTiO3(001) heterojunction Surface Science Reports. 65: 317-352. DOI: 10.1016/J.Surfrep.2010.09.001 |
0.383 |
|
| 2010 |
Wielunski LS, Katalinic S, Lee B, Connors M, Garfunkel E, Feldman LC, Podzorov V. Ion-scattering analysis of self-assembled monolayers of silanes on organic semiconductors Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 268: 1889-1892. DOI: 10.1016/J.Nimb.2010.02.050 |
0.38 |
|
| 2010 |
Lee HD, Feng T, Yu L, Mastrogiovanni D, Wan A, Garfunkel E, Gustafsson T. ALD growth of Al2O3 on GaAs: Oxide reduction, interface structure and CV performance Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 260-263. DOI: 10.1002/Pssc.200982425 |
0.422 |
|
| 2009 |
Rangan S, Bersch E, Bartynski RA, Garfunkel E, Vescovo E. Band offsets of a ruthenium gate on ultrathin high- κ oxide films on silicon Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.075106 |
0.454 |
|
| 2009 |
Dalponte M, Adam MC, Boudinov HI, Goncharova LV, Feng T, Garfunkel E, Gustafsson T. Effect of excess vacancy concentration on As and Sb doping in Si Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/16/165106 |
0.338 |
|
| 2009 |
Lee HD, Feng T, Yu L, Mastrogiovanni D, Wan A, Gustafsson T, Garfunkel E. Reduction of native oxides on GaAs during atomic layer growth of Al 2O3 Applied Physics Letters. 94. DOI: 10.1063/1.3148723 |
0.388 |
|
| 2009 |
Kao CY, Lee B, Wielunski LS, Heeney M, McCulloch I, Garfunkel E, Feldman LC, Podzorov V. Doping of conjugated polythiophenes with alkyl silanes Advanced Functional Materials. 19: 1906-1911. DOI: 10.1002/Adfm.200900120 |
0.337 |
|
| 2008 |
Bersch E, Rangan S, Bartynski RA, Garfunkel E, Vescovo E. Band offsets of ultrathin high- κ oxide films with Si Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.085114 |
0.47 |
|
| 2008 |
Rangan S, Bersch E, Bartynski RA, Garfunkel E, Vescovo E. GeOx interface layer reduction upon Al-gate deposition on a HfO2 GeOx/Ge (001) stack Applied Physics Letters. 92. DOI: 10.1063/1.2917480 |
0.334 |
|
| 2007 |
Goncharova LV, Celik O, Gustafsson T, Garfunkel E, Warusawithana M, Schlom DG, Wen H, Santos MB, Sayan S, Tsai W, Goel N. Interface characterization in III-V CMOS nanoelectronics Ecs Transactions. 11: 117-122. DOI: 10.1149/1.2779553 |
0.625 |
|
| 2007 |
Goncharova LV, Dalponte M, Gustafsson T, Celik O, Garfunkel E, Lysaght PS, Bersuker G. Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 261-268. DOI: 10.1116/1.2435376 |
0.652 |
|
| 2007 |
Dalponte M, Boudinov H, Goncharova LV, Garfunkel E, Gustafsson T. MEIS study of antimony implantation in SIMOX and vacancy-rich Si(1 0 0) Journal of Physics D: Applied Physics. 40: 4222-4227. DOI: 10.1088/0022-3727/40/14/017 |
0.306 |
|
| 2007 |
Du Pasquier A, Mastrogiovanni DDT, Klein LA, Wang T, Garfunkel E. Photoinduced charge transfer between poly(3-hexylthiophene) and germanium nanowires Applied Physics Letters. 91. DOI: 10.1063/1.2801554 |
0.629 |
|
| 2007 |
Goncharova LV, Dalponte M, Celik O, Garfunkel E, Gustafsson T, Lysaght PS, Bersuker GI. Gate metal-induced diffusion and interface reactions in Hf oxide films on Si Aip Conference Proceedings. 931: 324-328. DOI: 10.1063/1.2799392 |
0.36 |
|
| 2007 |
Goel N, Tsai W, Garner CM, Sun Y, Pianetta P, Warusawithana M, Schlom DG, Wen H, Gaspe C, Keay JC, Santos MB, Goncharova LV, Garfunkel E, Gustafsson T. Band offsets between amorphous LaAl O3 and In0.53 Ga0.47 As Applied Physics Letters. 91. DOI: 10.1063/1.2783264 |
0.364 |
|
| 2006 |
Chen B, Jha R, Lazar H, Biswas N, Lee J, Lee B, Wielunski L, Garfunkel E, Misra V. Influence of oxygen diffusion through capping layers of low work function metal gate electrodes Ieee Electron Device Letters. 27: 228-230. DOI: 10.1109/Led.2006.871184 |
0.352 |
|
| 2006 |
Zhitenev NB, Jiang W, Erbe A, Bao Z, Garfunkel E, Tennant DM, Cirelli RA. Control of topography, stress and diffusion at molecule-metal interfaces Nanotechnology. 17: 1272-1277. DOI: 10.1088/0957-4484/17/5/019 |
0.566 |
|
| 2006 |
Jiang W, Garfunkel E, Zhitenev N, Abusch-Magder D, Tennant D, Bao Z. Molecular conductance measurements through printed Au nanodots Applied Physics Letters. 89. DOI: 10.1063/1.2345613 |
0.568 |
|
| 2006 |
Barnes R, Starodub D, Gustafsson T, Garfunkel E. A medium energy ion scattering and x-ray photoelectron spectroscopy study of physical vapor deposited thin cerium oxide films on Si(100) Journal of Applied Physics. 100. DOI: 10.1063/1.2234820 |
0.451 |
|
| 2006 |
Goncharova LV, Dalponte M, Starodub DG, Gustafsson T, Garfunkel E, Lysaght PS, Foran B, Barnett J, Bersuker G. Oxygen diffusion and reactions in Hf-based dielectrics Applied Physics Letters. 89. DOI: 10.1063/1.2221522 |
0.393 |
|
| 2006 |
Goncharova LV, Starodub DG, Garfunkel E, Gustafsson T, Vaithyanathan V, Lettieri J, Schlom DG. Interface structure and thermal stability of epitaxial SrTiO 3 thin films on Si (001) Journal of Applied Physics. 100. DOI: 10.1063/1.2206710 |
0.421 |
|
| 2006 |
Dalponte M, Boudinov H, Goncharova LV, Garfunkel E, Gustafsson T. MEIS study of As implantation in O or N pre-implanted Si(0 0 1) Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 249: 874-877. DOI: 10.1016/J.Nimb.2006.03.154 |
0.314 |
|
| 2005 |
Jiang W, Zhitenev N, Bao Z, Meng H, Abusch-Magder D, Tennant D, Garfunkel E. Structure and bonding issues at the interface between gold and self-assembled conjugated dithiol monolayers. Langmuir : the Acs Journal of Surfaces and Colloids. 21: 8751-7. PMID 16142957 DOI: 10.1021/La0474316 |
0.605 |
|
| 2005 |
Erbe A, Jiang W, Bao Z, Abusch-Magder D, Tennant DM, Garfunkel E, Zhitenev N. Nanoscale patterning in application to materials and device structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 3132-3137. DOI: 10.1116/1.2130353 |
0.591 |
|
| 2005 |
Grande PL, Hentz A, Schiwietz G, Starodub D, Garfunkel E, Gustafsson T. Observation of collective inner-shell effects for protons backscattered from the Al(110) surface Physical Review a - Atomic, Molecular, and Optical Physics. 72. DOI: 10.1103/Physreva.72.012902 |
0.313 |
|
| 2005 |
Zhitenev NB, Erbe A, Bao Z, Jiang W, Garfunkel E. Molecular nano-junctions formed with different metallic electrodes Nanotechnology. 16: 495-500. DOI: 10.1088/0957-4484/16/4/027 |
0.579 |
|
| 2005 |
Hong M, Kortan AR, Chang P, Huang YL, Chen CP, Chou HY, Lee HY, Kwo J, Chu M, Chen CH, Goncharova LV, Garfunkel E, Gustafsson T. High-quality nanothickness single-crystal Sc2O3 film grown on Si(111) Applied Physics Letters. 87: 251902. DOI: 10.1063/1.2147711 |
0.447 |
|
| 2005 |
Sayan S, Nguyen NV, Ehrstein J, Chambers JJ, Visokay MR, Quevedo-Lopez MA, Colombo L, Yoder D, Levin I, Fischer DA, Paunescu M, Celik O, Garfunkel E. Effect of nitrogen on band alignment in HfSiON gate dielectrics Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2135390 |
0.748 |
|
| 2005 |
Sayan S, Croft M, Nguyen NV, Emge T, Ehrstein J, Levin I, Suehle J, Bartynski RA, Garfunkel E. The relation between crystalline phase, electronic structure, and dielectric properties in high-K gate stacks Aip Conference Proceedings. 788: 92-101. DOI: 10.1063/1.2062944 |
0.707 |
|
| 2005 |
Lichtenwalner DJ, Jur JS, Kingon AI, Agustin MP, Yang Y, Stemmer S, Goncharova LV, Gustafsson T, Garfunkel E. Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction Journal of Applied Physics. 98. DOI: 10.1063/1.1988967 |
0.432 |
|
| 2005 |
Frank MM, Wilk GD, Starodub D, Gustafsson T, Garfunkel E, Chabal YJ, Grazul J, Muller DA. Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1899745 |
0.42 |
|
| 2005 |
Sayan S, Nguyen NV, Ehrstein J, Emge T, Garfunkel E, Croft M, Zhao X, Vanderbilt D, Levin I, Gusev EP, Kim H, McIntyre PJ. Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1864235 |
0.692 |
|
| 2005 |
Delabie A, Puurunen RL, Brijs B, Caymax M, Conard T, Onsia B, Richard O, Vandervorst W, Zhao C, Heyns MM, Meuris M, Viitanen MM, Brongersma HH, De Ridder M, Goncharova LV, ... Garfunkel E, et al. Atomic layer deposition of hafnium oxide on germanium substrates Journal of Applied Physics. 97. DOI: 10.1063/1.1856221 |
0.38 |
|
| 2004 |
de Boer B, Frank MM, Chabal YJ, Jiang W, Garfunkel E, Bao Z. Metallic contact formation for molecular electronics: interactions between vapor-deposited metals and self-assembled monolayers of conjugated mono- and dithiols. Langmuir : the Acs Journal of Surfaces and Colloids. 20: 1539-42. PMID 15801409 DOI: 10.1021/La0356349 |
0.585 |
|
| 2004 |
Rutenberg IM, Scherman OA, Grubbs RH, Jiang W, Garfunkel E, Bao Z. Synthesis of polymer dielectric layers for organic thin film transistors via surface-initiated ring-opening metathesis polymerization. Journal of the American Chemical Society. 126: 4062-3. PMID 15053568 DOI: 10.1021/Ja035773C |
0.629 |
|
| 2004 |
Sayan S, Emge T, Garfunkel E, Zhao X, Wielunski L, Bartynski RA, Vanderbilt D, Suehle JS, Suzer S, Banaszak-Holl M. Band alignment issues related to HfO 2/SiO 2/p-Si gate stacks Journal of Applied Physics. 96: 7485-7491. DOI: 10.1063/1.1803107 |
0.682 |
|
| 2004 |
Dalponte M, Boudinov H, Goncharova LV, Starodub D, Garfunkel E, Gustafsson I. Thermal activation of As implanted in bulk Si and separation by implanted oxygen Journal of Applied Physics. 96: 7388-7391. DOI: 10.1063/1.1776319 |
0.355 |
|
| 2004 |
Dhar S, Song YW, Feldman LC, Isaacs-Smith T, Tin CC, Williams JR, Chung G, Nishimura T, Starodub D, Gustafsson T, Garfunkel E. Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface Applied Physics Letters. 84: 1498-1500. DOI: 10.1063/1.1651325 |
0.337 |
|
| 2004 |
Starodub D, Gustafsson T, Garfunkel E. The reaction of O2 with Al(1 1 0): A medium energy ion scattering study of nano-scale oxidation Surface Science. 552: 199-214. DOI: 10.1016/J.Susc.2004.01.019 |
0.366 |
|
| 2004 |
Han JH, Gao G, Widjaja Y, Garfunkel E, Musgrave CB. A quantum chemical study of ZrO2 atomic layer deposition growth reactions on the SiO2 surface Surface Science. 550: 199-212. DOI: 10.1016/J.Susc.2003.12.030 |
0.38 |
|
| 2004 |
Frank MM, Sayan S, Dörmann S, Emge TJ, Wielunski LS, Garfunkel E, Chabal YJ. Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 109: 6-10. DOI: 10.1016/J.Mseb.2003.10.020 |
0.688 |
|
| 2004 |
Sayan S, Bartynski RA, Zhao X, Gusev EP, Vanderbilt D, Croft M, Holl MB, Garfunkel E. Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study Physica Status Solidi (B) Basic Research. 241: 2246-2252. DOI: 10.1002/Pssb.200404945 |
0.667 |
|
| 2004 |
Sayan S, Bartynski RA, Robertson J, Suehle JS, Vogel E, Nguyen NV, Ehrstein J, Kopanski JJ, Suzer S, Holl MB, Garfunkel E. Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems Proceedings - Electrochemical Society. 1: 255-263. |
0.619 |
|
| 2003 |
Suzer S, Sayan S, Banaszak Holl MM, Garfunkel E, Hussain Z, Hamdan NM. Soft x-ray photoemission studies of Hf oxidation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 106-109. DOI: 10.1116/1.1525816 |
0.673 |
|
| 2003 |
Sayan S, Goncharova L, Starodub D, Bartynski RA, Zhao X, Vanderbilt D, Gustafsson T, Garfunkel E. Interface composition and band alignment issues in high-K gate stacks 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 26. DOI: 10.1109/ISDRS.2003.1271978 |
0.682 |
|
| 2003 |
Zhong J, Muthukumar S, Chen Y, Lu Y, Ng HM, Jiang W, Garfunkel EL. Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition Applied Physics Letters. 83: 3401-3403. DOI: 10.1063/1.1621729 |
0.357 |
|
| 2003 |
Sayan S, Garfunkel E, Nishimura T, Schulte WH, Gustafsson T, Wilk GD. Thermal decomposition behavior of the HfO2/SiO2/Si system Journal of Applied Physics. 94: 928-934. DOI: 10.1063/1.1578525 |
0.677 |
|
| 2003 |
Tsai W, Carter RJ, Nohira H, Caymax M, Conard T, Cosnier V, DeGendt S, Heyns M, Petry J, Richard O, Vandervorst W, Young E, Zhao C, Maes J, Tuominen M, ... ... Garfunkel E, et al. Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition Microelectronic Engineering. 65: 259-272. DOI: 10.1016/S0167-9317(02)00898-5 |
0.458 |
|
| 2003 |
Kwo J, Hong M, Busch B, Muller DA, Chabal YJ, Kortan AR, Mannaerts JP, Yang B, Ye P, Gossmann H, Sergent AM, Ng KK, Bude J, Schulte WH, Garfunkel E, et al. Advances in high κ gate dielectrics for Si and III-V semiconductors Journal of Crystal Growth. 251: 645-650. DOI: 10.1016/S0022-0248(02)02192-9 |
0.433 |
|
| 2002 |
Busch BW, Pluchery O, Chabal YJ, Muller DA, Opila RL, Raynien Kwo J, Garfunkel E. Materials Characterization of Alternative Gate Dielectrics Mrs Bulletin. 27: 206-211. DOI: 10.1557/Mrs2002.72 |
0.413 |
|
| 2002 |
Sayan S, Aravamudhan S, Busch BW, Schulte WH, Cosandey F, Wilk GD, Gustafsson T, Garfunkel E. Chemical vapor deposition of HfO2 films on Si(100) Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 507-512. DOI: 10.1116/1.1450584 |
0.674 |
|
| 2002 |
Kwo J, Hong M, Busch B, Muller DA, Chabal YJ, Kortan AR, Mannaerts JP, Yang B, Ye P, Gossmann H, Sergent AM, Ng KK, Bude J, Schulte WH, Garfunkel E, et al. Advances in high & kappa gate dielectrics for Si and III-V semiconductors Mbe 2002 - 2002 12th International Conference On Molecular Beam Epitaxy. 47-48. DOI: 10.1109/MBE.2002.1037753 |
0.325 |
|
| 2002 |
Chabal YJ, Raghavachari K, Zhang X, Garfunkel E. Silanone ( Si = O ) on Si(100): intermediate for initial silicon oxidation Physical Review B. 66: 1-4. DOI: 10.1103/Physrevb.66.161315 |
0.366 |
|
| 2002 |
Sayan S, Garfunkel E, Suzer S. Soft x-ray photoemission studies of the HfO2/SiO2/Si system Applied Physics Letters. 80: 2135-2137. DOI: 10.1063/1.1450049 |
0.662 |
|
| 2002 |
Busch BW, Pluchery O, Chabal YJ, Muller DA, Opila RL, Kwo JR, Garfunkel E. Materials characterization of alternative gate dielectrics Mrs Bulletin. 27: 206-211. |
0.303 |
|
| 2001 |
Zhang X, Chabal YJ, Christman SB, Chaban EE, Garfunkel E. Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces Journal of Vacuum Science and Technology. 19: 1725-1729. DOI: 10.1116/1.1335680 |
0.383 |
|
| 2001 |
Zhang X, Garfunkel E, Chabal YJ, Christman SB, Chaban EE. Stability of HF-etched Si(100) surfaces in oxygen ambient Applied Physics Letters. 79: 4051-4053. DOI: 10.1063/1.1425461 |
0.388 |
|
| 2001 |
Busch BW, Kwo J, Hong M, Mannaerts JP, Sapjeta BJ, Schulte WH, Garfunkel E, Gustafsson T. Interface reactions of high-κ Y2O3 gate oxides with Si Applied Physics Letters. 79: 2447-2449. DOI: 10.1063/1.1406989 |
0.446 |
|
| 2001 |
Maria JP, Wicaksana D, Kingon AI, Busch B, Schulte H, Garfunkel E, Gustafsson T. High temperature stability in lanthanum and zirconia-based gate dielectrics Journal of Applied Physics. 90: 3476-3482. DOI: 10.1063/1.1391418 |
0.412 |
|
| 2001 |
Green ML, Gusev EP, Degraeve R, Garfunkel EL. Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits Journal of Applied Physics. 90: 2057-2121. DOI: 10.1063/1.1385803 |
0.382 |
|
| 2001 |
Chambers JJ, Busch BW, Schulte WH, Gustafsson T, Garfunkel E, Wang S, Maher DM, Klein TM, Parsons GN. Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon Applied Surface Science. 181: 78-93. DOI: 10.1016/S0169-4332(01)00373-7 |
0.474 |
|
| 2001 |
Gustafsson T, Lu HC, Busch BW, Schulte WH, Garfunkel E. High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 183: 146-153. DOI: 10.1016/S0168-583X(00)00619-4 |
0.43 |
|
| 2000 |
Busch BW, Schulte WH, Garfunkel E, Gustafsson T, Qi W, Nieh R, Lee J. Oxygen exchange and transport in thin zirconia films on Si(100) Physical Review B - Condensed Matter and Materials Physics. 62. DOI: 10.1103/Physrevb.62.R13290 |
0.4 |
|
| 2000 |
Chang JP, Green ML, Donnelly VM, Opila RL, Eng J, Sapjeta J, Silverman PJ, Weir B, Lu HC, Gustafsson T, Garfunkel E. Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy Journal of Applied Physics. 87: 4449-4455. DOI: 10.1063/1.373090 |
0.424 |
|
| 2000 |
Lu HC, Gusev EP, Garfunkel E, Busch BW, Gustafsson T, Sorsch TW, Green ML. Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon Journal of Applied Physics. 87: 1550-1555. DOI: 10.1063/1.372048 |
0.436 |
|
| 2000 |
Lu HC, Gusev E, Yasuda N, Green M, Alers G, Garfunkel E, Gustafsson T. Growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon Applied Surface Science. 166: 465-468. DOI: 10.1016/S0169-4332(00)00475-X |
0.459 |
|
| 1999 |
Travaly Y, Zhang L, Zhao Y, Pfeffer R, Uhrich K, Cosandey F, Garfunkel E, Madey TE. Nucleation, growth, and aggregation of gold on polyimide surfaces Journal of Materials Research. 14: 3673-3683. DOI: 10.1557/Jmr.1999.0496 |
0.405 |
|
| 1999 |
Gusev EP, Lu HC, Garfunkel EL, Gustafsson T, Green ML. Growth and characterization of ultrathin nitrided silicon oxide films Ibm Journal of Research and Development. 43: 265-286. DOI: 10.1147/Rd.433.0265 |
0.406 |
|
| 1999 |
Starodub D, Gusev EP, Garfunkel E, Gustafsson T. Silicon oxide decomposition and desorption during the thermal oxidation of silicon Surface Review and Letters. 6: 45-52. DOI: 10.1142/S0218625X99000081 |
0.393 |
|
| 1999 |
Diebold AC, Venables D, Chabal Y, Muller D, Weldon M, Garfunkel E. Characterization and production metrology of thin transistor gate oxide films Materials Science in Semiconductor Processing. 2: 103-147. DOI: 10.1016/S1369-8001(99)00009-8 |
0.418 |
|
| 1999 |
Lu HC, Yasuda N, Garfunkel E, Gustafsson T, Chang JP, Opila RL, Alers G. Structural properties of thin films of high dielectric constant materials on silicon Microelectronic Engineering. 48: 287-290. DOI: 10.1016/S0167-9317(99)00390-1 |
0.449 |
|
| 1998 |
Gusev EP, Lu HC, Garfunkel E, Gustafsson T, Green ML, Brasen D, Lennard WN. Nitrogen engineering of ultrathin oxynitrides by a thermal NO/O2/NO process Journal of Applied Physics. 84: 2980-2982. DOI: 10.1063/1.368435 |
0.404 |
|
| 1998 |
Alers GB, Werder DJ, Chabal Y, Lu HC, Gusev EP, Garfunkel E, Gustafsson T, Urdahl RS. Intermixing at the tantalum oxide/silicon interface in gate dielectric structures Applied Physics Letters. 73: 1517-1519. DOI: 10.1063/1.122191 |
0.448 |
|
| 1998 |
Gupta A, Toby S, Gusev EP, Lu HC, Li Y, Green ML, Gustafsson T, Garfunkel E. Nitrous oxide gas phase chemistry during silicon oxynitride film growth Progress in Surface Science. 59: 103-115. DOI: 10.1016/S0079-6816(98)00039-2 |
0.338 |
|
| 1997 |
Gusev EP, Lu HC, Gustafsson T, Garfunkel E, Green ML, Brasen D. The composition of ultrathin silicon oxynitrides thermally grown in nitric oxide Journal of Applied Physics. 82: 896-898. DOI: 10.1063/1.365858 |
0.415 |
|
| 1997 |
Lu HC, Gusev EP, Gustafsson T, Garfunkel E. Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides Journal of Applied Physics. 81: 6992-6995. DOI: 10.1063/1.365264 |
0.468 |
|
| 1997 |
Green ML, Sorsch T, Feldman LC, Lennard WN, Gusev EP, Garfunkel E, Lu HC, Gustafsson T. Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T=760-1050 °C Applied Physics Letters. 71: 2978-2980. DOI: 10.1063/1.120235 |
0.332 |
|
| 1997 |
Lu HC, Gusev EP, Gustafsson T, Brasen D, Green ML, Garfunkel E. Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100) Microelectronic Engineering. 36: 29-32. DOI: 10.1016/S0167-9317(97)00010-5 |
0.382 |
|
| 1997 |
Zhou JB, Gustafsson T, Garfunkel E. The structure and thermal behavior of Cu on ultrathin films of SiO2 on Si(111) Surface Science. 372: 21-27. DOI: 10.1016/S0039-6028(96)01100-4 |
0.346 |
|
| 1997 |
Gusev EP, Lu HC, Gustafsson T, Garfunkel E. Silicon oxidation and oxynitridation in the ultrathin regime: Ion scattering studies Brazilian Journal of Physics. 27: 302-313. |
0.321 |
|
| 1996 |
Gustafsson T, Garfunkel E, Gusev EP, Häberle P, Lu HC, Zhou JB. Structural studies of oxide surfaces Surface Review and Letters. 3: 1561-1565. DOI: 10.1142/S0218625X96002552 |
0.357 |
|
| 1996 |
Gusev EP, Lu HC, Garfunkel E, Gustafsson T. Thermal behavior of the clean Ni(111) surface Surface Review and Letters. 3: 1349-1353. DOI: 10.1142/S0218625X96002357 |
0.322 |
|
| 1996 |
Wu Y, Garfunkel E, Madey TE. Growth of ultrathin crystalline Al2O3 films on Ru(0001) and Re(0001) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 2554-2563. DOI: 10.1116/1.579981 |
0.424 |
|
| 1996 |
Lu HC, Gusev EP, Gustafsson T, Garfunkel E, Green ML, Brasen D, Feldman LC. High resolution ion scattering study of silicon oxynitridation Applied Physics Letters. 69: 2713-2715. DOI: 10.1063/1.117687 |
0.367 |
|
| 1996 |
Gusev EP, Lu HC, Gustafsson T, Garfunkel E. The initial oxidation of silicon: New ion scattering results in the ultra-thin regime Applied Surface Science. 104: 329-334. DOI: 10.1016/S0169-4332(96)00166-3 |
0.405 |
|
| 1996 |
Wu Y, Garfunkel E, Madey TE. Growth and oxidation of ultra-thin Al films on the Re (0001) surface Surface Science. 365: 337-352. DOI: 10.1016/0039-6028(96)00699-1 |
0.431 |
|
| 1996 |
Lu HC, Gusev EP, Garfunkel E, Gustafsson T. An ion scattering study of the interaction of oxygen with Si(111): Surface roughening and oxide growth Surface Science. 351: 111-128. DOI: 10.1016/0039-6028(95)01351-2 |
0.384 |
|
| 1996 |
Lu HC, Gusev EP, Garfunkel E, Gustafsson T. A MEIS study of thermal effects on the Ni(111) surface Surface Science. 352: 21-24. DOI: 10.1016/0039-6028(95)01083-1 |
0.316 |
|
| 1995 |
Gusev EP, Lu HC, Gustafsson T, Garfunkel E. Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering. Physical Review. B, Condensed Matter. 52: 1759-1775. PMID 9981243 DOI: 10.1103/Physrevb.52.1759 |
0.417 |
|
| 1995 |
Gusev EP, Lu HC, Gustafsson T, Garfunkel E. Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering Physical Review B. 52: 1759-1775. DOI: 10.1103/PhysRevB.52.1759 |
0.317 |
|
| 1995 |
Lu HC, Gustafsson T, Gusev EP, Garfunkel E. An isotopic labeling study of the growth of thin oxide films on Si(100) Applied Physics Letters. 67: 1742. DOI: 10.1063/1.115035 |
0.409 |
|
| 1995 |
Mayer JT, Diebold U, Madey TE, Garfunkel E. Titanium and reduced titania overlayers on titanium dioxide(110) Journal of Electron Spectroscopy and Related Phenomena. 73: 1-11. DOI: 10.1016/0368-2048(94)02258-5 |
0.43 |
|
| 1995 |
Wu Y, Tao HS, Garfunkel E, Madey TE, Shinn ND. Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001) Surface Science. 336: 123-139. DOI: 10.1016/0039-6028(95)00494-7 |
0.424 |
|
| 1994 |
Gusev EP, Lu HC, Gustafsson T, Garfunkel E. On the mechanism of ultra thin silicon oxide film growth during thermal oxidation Materials Research Society Symposium Proceedings. 318: 69-74. DOI: 10.1557/Proc-318-69 |
0.419 |
|
| 1994 |
Saulys DS, Ermakov A, Garfunkel EL, Dowben PA. Electron-beam-induced patterned deposition of allylcyclopentadienyl palladium using scanning tunneling microscopy Journal of Applied Physics. 76: 7639-7641. DOI: 10.1063/1.357935 |
0.34 |
|
| 1994 |
Mayer JT, Garfunkel E. Nickel diffusion and silicide island formation on silicon (111) Nanostructured Materials. 4: 275-283. DOI: 10.1016/0965-9773(94)90137-6 |
0.362 |
|
| 1993 |
Zhou JB, Gustafsson T, Lin RF, Garfunkel E. Medium energy ion scattering study of Ni on ultrathin films of SiO2 on Si(111) Surface Science. 284: 67-76. DOI: 10.1016/0039-6028(93)90525-O |
0.426 |
|
| 1992 |
Mayer JT, Lin RF, Garfunkel E. Surface and bulk diffusion of adsorbed nickel on ultrathin thermally grown silicon dioxide Surface Science. 265: 102-110. DOI: 10.1016/0039-6028(92)90491-N |
0.414 |
|
| 1991 |
Saulys D, Rudd G, Garfunkel E. Scanning tunneling microscopy assisted oxide surface etching Journal of Applied Physics. 69: 1707-1711. DOI: 10.1063/1.347216 |
0.338 |
|
| 1990 |
Ker-Jar Song, Demmin RA, Chengzhi Dong, Garfunkel E, Madey TE. faceting induced by an ultrathin metal film: Pt on W(111) Surface Science. 227. DOI: 10.1016/0039-6028(90)90376-J |
0.396 |
|
| 1989 |
Garfunkel E, Rudd G, Novak D, Wang S, Ebert G, Greenblatt M, Gustafsson T, Garofalini S. Scanning Tunneling Microscopy and Nanolithography on a Conducting Oxide, Rb0.3MoO3 Science. 246: 99-100. PMID 17837766 DOI: 10.1126/Science.246.4926.99 |
0.341 |
|
| 1988 |
Yang S, Yu M, Meigs G, Feng XH, Garfunkel E. Nickel monolayers on copper surfaces: CO adsorption and ni diffusion Surface Science. 205. DOI: 10.1016/0039-6028(88)90159-8 |
0.352 |
|
| 1986 |
Ding X, Garfunkel E, Dong G, Yang S, Hou X, Wang X. Summary Abstract: The adsorption of water on clean and oxygen-covered Ag(100) studied by high resolution electron energy loss spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 1468-1470. DOI: 10.1116/1.573540 |
0.3 |
|
| 1986 |
Garfunkel EL, Minot C, Gavezzotti A, Simonetta M. Benzene adsorption on the Rh(111) metal surface: A theoretical study Surface Science. 167: 177-197. DOI: 10.1016/0039-6028(86)90793-4 |
0.528 |
|
| 1986 |
Garfunkel EL, Minot C. The role of p orbitals in determining the interatomic distance and the electronic band structure in alkali metal crystals Journal of Solid State Chemistry. 65: 72-78. DOI: 10.1016/0022-4596(86)90090-3 |
0.448 |
|
| 1985 |
Garfunkel EL, Farias MH, Somorjai GA. The modification of benzene and carbon monoxide adsorption on platinum(111) by the coadsorption of potassium or sulfur Journal of the American Chemical Society. 107: 349-353. DOI: 10.1021/Ja00288A013 |
0.355 |
|
| 1985 |
Kudo M, Garfunkel EL, Somorjai GA. Ultraviolet photoelectron spectroscopic study of the interaction of potassium with carbon monoxide and benzene on the platinum(111) surface The Journal of Physical Chemistry. 89: 3207-3211. DOI: 10.1021/J100261A010 |
0.437 |
|
| 1985 |
Garfunkel EL, Ding X, Dong G, Yang S, Hou X, Wang X. The coadsorption of sodium and oxygen on Ag(100): an XPS, UPS and HREELS study Surface Science. 164: 511-525. DOI: 10.1016/0039-6028(85)90763-0 |
0.312 |
|
| 1983 |
Garfunkel EL, Maj JJ, Frost JC, Farias MH, Somorjai GA. Interaction of potassium with .pi.-electron orbital containing molecules on platinum(111) The Journal of Physical Chemistry. 87: 3629-3635. DOI: 10.1021/J100242A012 |
0.339 |
|
| 1982 |
Garfunkel EL, Crowell JE, Somorjai GA. The strong influence of potassium on the adsorption of carbon monoxide on platinum surfaces: a TDS and HREELS study The Journal of Physical Chemistry. 86: 310-313. DOI: 10.1021/J100392A002 |
0.403 |
|
| 1982 |
Garfunkel EL, Somorjai GA. Potassium and potassium oxide monolayers on the platinum (111) and stepped (755) crystal surfaces: A LEED, AES, and TDS study Surface Science. 115: 441-454. DOI: 10.1016/0039-6028(82)90419-8 |
0.465 |
|
| 1982 |
Crowell JE, Garfunkel EL, Somorjai GA. The coadsorption of potassium and co on the pt(111) crystal surface: A TDS, HREELS and UPS study Surface Science. 121: 303-320. DOI: 10.1016/0039-6028(82)90045-0 |
0.689 |
|
| 1982 |
Garfunkel EL, Crowell JE, Somorjai GA. The strong influence of potassium on the adsorption of CO on platinum surfaces. A thermal desorption spectroscopy and high-resolution electron energy loss spectroscopy study Journal of Physical Chemistry. 86: 310-313. |
0.635 |
|
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