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Min Dai, Ph.D. - Publications

Affiliations: 
2008 Physics, Astronomy and Astrophysics Rutgers University, New Brunswick, New Brunswick, NJ, United States 
Area:
Condensed Matter Physics
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2010 Dai M, Kwon J, Halls MD, Gordon RG, Chabal YJ. Surface and interface processes during atomic layer deposition of copper on silicon oxide. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 3911-7. PMID 20092316 DOI: 10.1021/La903212C  0.506
2010 Michalak DJ, Amy SR, Aureau D, Dai M, Estève A, Chabal YJ. Nanopatterning Si(111) surfaces as a selective surface-chemistry route. Nature Materials. 9: 266-71. PMID 20062049 DOI: 10.1038/Nmat2611  0.506
2010 Kwon J, Dai M, Halls MD, Chabal YJ. Suppression of substrate oxidation during ozone based atomic layer deposition of Al2 O3: Effect of ozone flow rate Applied Physics Letters. 97. DOI: 10.1063/1.3500821  0.526
2009 Seitz O, Dai M, Aguirre-Tostado FS, Wallace RM, Chabal YJ. Copper-metal deposition on self assembled monolayer for making top contacts in molecular electronic devices. Journal of the American Chemical Society. 131: 18159-67. PMID 19924992 DOI: 10.1021/Ja907003W  0.512
2009 Dai M, Wang Y, Kwon J, Halls MD, Chabal YJ. Nitrogen interaction with hydrogen-terminated silicon surfaces at the atomic scale. Nature Materials. 8: 825-30. PMID 19684585 DOI: 10.1038/Nmat2514  0.517
2009 Li M, Dai M, Chabal YJ. Atomic layer deposition of aluminum oxide on carboxylic acid-terminated self-assembled monolayers. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 1911-4. PMID 19140733 DOI: 10.1021/La803581K  0.511
2009 Dai M, Kwon J, Chabal YJ, Halls MD, Gordon RG. FTIR study of copper agglomeration during atomic layer deposition of copper Mrs Proceedings. 1155. DOI: 10.1557/Proc-1155-C11-06  0.524
2009 Kwon J, Dai M, Halls MD, Langereis E, Chabal YJ, Gordon RG. In situ infrared characterization during atomic layer deposition of lanthanum oxide Journal of Physical Chemistry C. 113: 654-660. DOI: 10.1021/Jp806027M  0.521
2009 Dai M, Kwon J, Chabal YJ, Halls MD, Gordon RG. FTIR study of copper agglomeration during atomic layer deposition of copper Materials Research Society Symposium Proceedings. 1155: 41-46.  0.428
2008 Kwon J, Dai M, Halls MD, Chabal YJ. Detection of a formate surface intermediate in the atomic layer deposition of high-k dielectrics using ozone Chemistry of Materials. 20: 3248-3250. DOI: 10.1021/Cm703667H  0.506
2007 Dai M, Kwon J, Ho MT, Wang Y, Rivillon S, Li M, Chabal YJ, Boleslawski M. In-situ Infrared Absorption Monitoring of Atomic Layer Deposition of Metal Oxides on Functionalized Si and Ge Surfaces Mrs Proceedings. 996. DOI: 10.1557/Proc-0996-H07-04  0.541
2007 Wang Y, Dai M, Ho MT, Wielunski LS, Chabal YJ. Infrared characterization of hafnium oxide grown by atomic layer deposition using ozone as the oxygen precursor Applied Physics Letters. 90. DOI: 10.1063/1.2430908  0.519
2006 Wang Y, Dai M, Ho MT, Rivillon S, Chabal YJ. In situ infrared absorption spectroscopy for thin film growth by atomic layer deposition Materials Research Society Symposium Proceedings. 967: 549-568. DOI: 10.1117/12.681331  0.507
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