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Wonjae Lee, Ph.D. - Publications

Affiliations: 
2009 University of Chicago, Chicago, IL 
Area:
Organizational, Social Structure and Development, Social Psychology, Recreation
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30 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Jung YS, Lee KH, Kim W, Lee W, Choi H, Kim KH. Properties of In–Ga–Zn-O thin films for thin film transistor channel layer prepared by facing targets sputtering method Ceramics International. 38. DOI: 10.1016/J.Ceramint.2011.05.106  0.41
2008 Lee S, Jeong Y, Jeong S, Cho C, Ahn H, Kim H, Lee W. SPECTROSCOPIC STUDY ON DIFFUSION PHENOMENON OF THERMALLY ANNEALED Pt/TiOx ELECTRODE Integrated Ferroelectrics. 96: 60-68. DOI: 10.1080/10584580802091631  0.333
2008 Kim HS, Jung ES, Lee W, Kim JH, Ryu S, Choi S. Effects of oxygen concentration on the electrical properties of ZnO films Ceramics International. 34: 1097-1101. DOI: 10.1016/J.Ceramint.2007.09.105  0.396
2008 Kim EM, Cho J, Moon JH, Lee W, Kim HS, Kim JH. Effects of deposition temperature on the crystallinity of Ba0.5Sr0.5TiO3 epitaxial thin films integrated on Si substrates by pulsed laser deposition method Ceramics International. 34: 1017-1021. DOI: 10.1016/J.Ceramint.2007.09.081  0.417
2007 Kim BR, Kim T, Lee W, Moon JH, Lee B, Kim HS, Kim JH. Effects of periodicity and oxygen partial pressure on the crystallinity and dielectric property of artificial SrTiO3/BaTiO3 superlattices integrated on Si substrates by pulsed laser deposition method Thin Solid Films. 515: 6438-6441. DOI: 10.1016/J.Tsf.2006.11.047  0.349
2006 Seong NJ, Lee WJ, Yoon SG. Structural and electrical characterizations of ultrathin HfO2 gate dielectrics treated by nitrogen-plasma atmosphere Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 312-315. DOI: 10.1116/1.2151218  0.347
2005 Seong NJ, Yoon SG, Lee WJ. Electrical characteristics of Ga 2O 3-TiO 2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications Applied Physics Letters. 87. DOI: 10.1063/1.2034100  0.372
2001 Lee W, You I, Ryu S, Yu B, Cho K, Yoon S, Lee C. SrTa2O6 thin films deposited by plasma-enhanced atomic layer deposition Japanese Journal of Applied Physics. 40: 6941-6944. DOI: 10.1143/Jjap.40.6941  0.436
2001 Lee H, Kim TW, Lee W, Park J, Kang D. Characteristics of Organic Light-Emitting Diodes Using PECCP Langmuir-Blodgett Film as an Emissive Layer Molecular Crystals and Liquid Crystals Science and Technology. Section a. Molecular Crystals and Liquid Crystals. 371: 451-454. DOI: 10.1080/10587250108024781  0.348
2001 Choi ES, Yoon SG, Lee WJ. Improvements in electrical properties of hydrogen-treated SrBi2Ta2O9 capacitors with chemical vapor deposited Pt top electrode Applied Physics Letters. 78: 2040-2042. DOI: 10.1063/1.1347015  0.328
2000 Lee W, You I, Yang I, Yu B, Cho K. Phase Formations and Electrical Properties of (SrxBa1-x)Bi2Ta2O9 Thin Films. Japanese Journal of Applied Physics. 39: 5469-5471. DOI: 10.1143/Jjap.39.5469  0.421
2000 Seo J, Lee D, Lee W, Yu B, Kwon K, Yeom G, Chang E, Kim C. Etching characteristics of SrBi2Ta2O9 film with Ar/CHF3 plasma Journal of Vacuum Science and Technology. 18: 1354-1358. DOI: 10.1116/1.582353  0.402
1999 Lee W, Cho C, Kim S, You I, Kim BW, Yu B, Shin CH, Lee HC. Etching behavior and damage recovery of SrBi2Ta2O9 thin films Japanese Journal of Applied Physics. 38: 1428-1431. DOI: 10.1143/Jjap.38.L1428  0.395
1999 Lee W, Shin C, Cho C, Lyu J, Kim B, Yu B, Cho K. Electrical Properties of SrBi2Ta2O9/Insulator/Si Structures with Various Insulators Japanese Journal of Applied Physics. 38: 2039-2043. DOI: 10.1143/Jjap.38.2039  0.348
1999 Cho C, Lee W, Yu B, Kim B, Park KB. Structural and Ferroelectric Properties of Sol–Gel Deposited Nb-doped Pb[(Sc1/2Nb1/2)0.57Ti0.43]O3 Thin Films Japanese Journal of Applied Physics. 38: 1459-1465. DOI: 10.1143/Jjap.38.1459  0.43
1999 Cho C, Lee W, Yu B, Kim B. Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film Journal of Applied Physics. 86: 2700-2711. DOI: 10.1063/1.371114  0.424
1998 Ahn J, Lee W, Kim H. Effects of the Interfacial Layers on the Time-Dependent Leakage Current Characteristics of(Ba,Sr)TiO3 Thin Films Japanese Journal of Applied Physics. 37: 6472-6475. DOI: 10.1143/Jjap.37.6472  0.411
1998 Ahn J, Choi W, Lee W, Kim H. Annealing of RuO 2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO 3 Thin Films Japanese Journal of Applied Physics. 37: 284-289. DOI: 10.1143/Jjap.37.284  0.428
1998 Choi W, Ahn J, Lee W, Kim H. Electrical properties of Sb-doped PZT films deposited by d.c. reactive sputtering using multi-targets Materials Letters. 37: 119-127. DOI: 10.1016/S0167-577X(98)00082-2  0.417
1997 Kim N, Yoon S, Lee W, Kim H. Electrical and Structural Properties of SrTiO 3 Thin Films Deposited by Plasma-enhanced Metalorganic Chemical Vapor Deposition Journal of Materials Research. 12: 1160-1164. DOI: 10.1557/Jmr.1997.0160  0.433
1997 Kim N, Yoon S, Lee W, Kim H. Effects of SrF2 phase on electrical properties of SrTiO3 thin films deposited by plasma-enhanced metalorganic chemical vapor deposition Integrated Ferroelectrics. 14: 105-113. DOI: 10.1080/10584589708019982  0.427
1996 Lee W, Kim H, Yoon S. Microstructure dependence of electrical properties of (Ba0.5Sr0.5)TiO3 thin films deposited on Pt/SiO2/Si Journal of Applied Physics. 80: 5891-5894. DOI: 10.1063/1.363583  0.428
1996 Kim Y, Lee W, Kim H. Deposition of PZT films by MOCVD at low temperature and their change in properties with annealing temperature and Zr/Ti ratio Thin Solid Films. 279: 140-144. DOI: 10.1016/0040-6090(95)08171-2  0.372
1995 Lee W, Park I, Jang G, Kim H. Electrical Properties and Crystal Structure of (Ba0.5Sr0.5)TiO3 Thin Films Prepared on Pt/SiO2/Si by RF Magnetron Sputtering Japanese Journal of Applied Physics. 34: 196-199. DOI: 10.1143/Jjap.34.196  0.434
1995 Lee WJ, Kim HG. Oxygen plasma effects on electrical properties of barium strontium titanate (bst) thin films Integrated Ferroelectrics. 7: 207-214. DOI: 10.1080/10584589508220233  0.406
1995 Lee W, Kim H. Electrical properties of barium strontium titanate (BST) thin films deposited on various PT-base electrodes Integrated Ferroelectrics. 11: 111-119. DOI: 10.1080/10584589508013583  0.432
1995 Chae SJ, Lee WJ, Park SS, Kim HG, Yoon SG. Characterization of (Pb1-xLax)TiO3 Thin Films Grown by Radio -Frequency Magnetron Sputtering and Their Electrical Properties Integrated Ferroelectrics. 10: 63-72. DOI: 10.1080/10584589508012264  0.412
1995 Lee W, Kim Y, Kim H. Pt-base electrodes and effects on phase formations and electrical properties of high-dielectric thin films Thin Solid Films. 269: 75-79. DOI: 10.1016/0040-6090(95)06755-8  0.43
1995 Choi CG, No K, Lee W, Kim H, Jung SO, Lee WJ, Kim WS, Kim SJ, Yoon C. Effects of oxygen partial pressure on the microstructure and electrical properties of indium tin oxide film prepared by d.c. magnetron sputtering Thin Solid Films. 258: 274-278. DOI: 10.1016/0040-6090(94)06354-0  0.368
1994 Nam S, Lee W, Kim H. Oriented growth of SrTiO3 thin films on Si substrate by radio frequency magnetron sputtering Journal of Physics D. 27: 866-870. DOI: 10.1088/0022-3727/27/4/029  0.412
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