| Year |
Citation |
Score |
| 2021 |
Li J, Dehzangi A, Brown G, Razeghi M. Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice. Scientific Reports. 11: 7104. PMID 33782500 DOI: 10.1038/s41598-021-86566-8 |
0.316 |
|
| 2021 |
Dehzangi A, Li J, Razeghi M. Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice. Light, Science & Applications. 10: 17. PMID 33446630 DOI: 10.1038/s41377-020-00453-x |
0.319 |
|
| 2020 |
Wang F, Slivken S, Wu DH, Razeghi M. Room temperature quantum cascade lasers with 22% wall plug efficiency in continuous-wave operation. Optics Express. 28: 17532-17538. PMID 32679960 DOI: 10.1364/Oe.394916 |
0.704 |
|
| 2020 |
Lu Q, Slivken S, Wu D, Razeghi M. High power continuous wave operation of single mode quantum cascade lasers up to 5 W spanning λ∼3.8-8.3 µm. Optics Express. 28: 15181-15188. PMID 32403550 DOI: 10.1364/Oe.393069 |
0.668 |
|
| 2020 |
Dehzangi A, Wu D, McClintock R, Li J, Jaud A, Razeghi M. Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation Photonics. 7: 68. DOI: 10.3390/Photonics7030068 |
0.646 |
|
| 2020 |
Wang F, Slivken SB, Wu DH, Razeghi M. Room temperature quantum cascade laser with ∼31% wall-plug efficiency Aip Advances. 10: 75012. DOI: 10.1063/5.0012925 |
0.7 |
|
| 2020 |
Dehzangi A, Wu D, McClintock R, Li J, Razeghi M. Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation Applied Physics Letters. 116: 221103. DOI: 10.1063/5.0010273 |
0.627 |
|
| 2020 |
Wu D, Dehzangi A, Li J, Razeghi M. High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodetector by MOCVD Applied Physics Letters. 116: 161108. DOI: 10.1063/5.0005326 |
0.428 |
|
| 2020 |
Wang F, Slivken S, Wu DH, Lu QY, Razeghi M. Continuous wave quantum cascade lasers with 5.6 W output power at room temperature and 41% wall-plug efficiency in cryogenic operation Aip Advances. 10: 55120. DOI: 10.1063/5.0003318 |
0.693 |
|
| 2020 |
Wu D, Li J, Dehzangi A, Razeghi M. Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice Aip Advances. 10: 25018. DOI: 10.1063/1.5136501 |
0.458 |
|
| 2020 |
Wu D, Li J, Dehzangi A, Razeghi M. High performance InAs/InAsSb Type-II superlattice mid-wavelength infrared photodetectors with double barrier Infrared Physics & Technology. 109: 103439. DOI: 10.1016/J.Infrared.2020.103439 |
0.472 |
|
| 2020 |
Li J, Dehzangi A, Wu D, McClintock R, Razeghi M. Type-II superlattice-based heterojunction phototransistors for high speed applications Infrared Physics & Technology. 108: 103350. DOI: 10.1016/J.Infrared.2020.103350 |
0.632 |
|
| 2019 |
Zhou W, Lu QY, Wu DH, Slivken S, Razeghi M. High-power, continuous-wave, phase-locked quantum cascade laser arrays emitting at 8 µm. Optics Express. 27: 15776-15785. PMID 31163768 DOI: 10.1364/Oe.27.015776 |
0.697 |
|
| 2019 |
Lu Q, Wang F, Wu D, Slivken S, Razeghi M. Room temperature terahertz semiconductor frequency comb. Nature Communications. 10: 2403. PMID 31160562 DOI: 10.1038/S41467-019-10395-7 |
0.672 |
|
| 2019 |
Dehzangi A, McClintock R, Haddadi A, Wu D, Chevallier R, Razeghi M. Type-II superlattices base visible/extended short-wavelength infrared photodetectors with a bandstructure-engineered photo-generated carrier extractor. Scientific Reports. 9: 5003. PMID 30899055 DOI: 10.1038/S41598-019-41494-6 |
0.687 |
|
| 2019 |
Slivken S, Wu D, Razeghi M. Surface Emitting, Tunable, Mid-Infrared Laser with High Output Power and Stable Output Beam. Scientific Reports. 9: 549. PMID 30679665 DOI: 10.1038/S41598-018-36872-5 |
0.681 |
|
| 2019 |
Dehzangi A, McClintock R, Wu D, Li J, Johnson SM, Dial E, Razeghi M. High speed antimony-based superlattice photodetectors transferred on sapphire Applied Physics Express. 12: 116502. DOI: 10.7567/1882-0786/Ab4A8E |
0.539 |
|
| 2019 |
Park J, McClintock R, Jaud A, Dehzangi A, Razeghi M. MOCVD grown β-Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire Applied Physics Express. 12: 095503. DOI: 10.7567/1882-0786/Ab3B2A |
0.595 |
|
| 2019 |
Zhang Y, Haddadi A, Dehzangi A, Chevallier R, Razeghi M. Suppressing Spectral Crosstalk in Dual-Band Long- Wavelength Infrared Photodetectors With Monolithically Integrated Air-Gapped Distributed Bragg Reflectors Ieee Journal of Quantum Electronics. 55: 1-6. DOI: 10.1109/Jqe.2018.2882808 |
0.343 |
|
| 2019 |
Park J, McClintock R, Razeghi M. Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD Semiconductor Science and Technology. 34: 08LT01. DOI: 10.1088/1361-6641/Ab2C17 |
0.605 |
|
| 2019 |
Dehzangi A, Durlin Q, Wu D, McClintock R, Razeghi M. Investigation of surface leakage reduction for small pitch shortwave infrared photodetectors Semiconductor Science and Technology. 34: 06LT01. DOI: 10.1088/1361-6641/Ab1Bf8 |
0.636 |
|
| 2019 |
Dehzangi A, Haddadi A, Chevallier R, Zhang Y, Razeghi M. Fabrication of 12 µm pixel-pitch 1280 × 1024 extended short wavelength infrared focal plane array using heterojunction type-II superlattice-based photodetectors Semiconductor Science and Technology. 34: 03LT01. DOI: 10.1088/1361-6641/Aaf770 |
0.479 |
|
| 2019 |
Wu D, Dehzangi A, Razeghi M. Demonstration of mid-wavelength infrared nBn photodetectors based on type-II InAs/InAs1-xSbx superlattice grown by metal-organic chemical vapor deposition Applied Physics Letters. 115: 61102. DOI: 10.1063/1.5100617 |
0.44 |
|
| 2019 |
Dehzangi A, McClintock R, Wu D, Haddadi A, Chevallier R, Razeghi M. Extended short wavelength infrared heterojunction phototransistors based on type II superlattices Applied Physics Letters. 114: 191109. DOI: 10.1063/1.5093560 |
0.665 |
|
| 2019 |
Wu D, Durlin Q, Dehzangi A, Zhang Y, Razeghi M. High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition Applied Physics Letters. 114: 011104. DOI: 10.1063/1.5058714 |
0.46 |
|
| 2019 |
Robin Y, Ding K, Demir I, McClintock R, Elagoz S, Razeghi M. High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate Materials Science in Semiconductor Processing. 90: 87-91. DOI: 10.1016/J.Mssp.2018.09.027 |
0.668 |
|
| 2019 |
Dasari K, Wang J, Jadwisienczak W, Dierolf V, Razeghi M, Palai R. Photoluminescence linewidth narrowing in Yb-doped GaN and InGaN thin films Journal of Luminescence. 209: 237-243. DOI: 10.1016/J.Jlumin.2019.01.012 |
0.311 |
|
| 2018 |
Zhou W, Wu D, Lu QY, Slivken S, Razeghi M. Single-mode, high-power, mid-infrared, quantum cascade laser phased arrays. Scientific Reports. 8: 14866. PMID 30291326 DOI: 10.1038/S41598-018-33024-7 |
0.665 |
|
| 2018 |
Dehzangi A, Haddadi A, Chevallier R, Zhang Y, Razeghi M. nBn extended short-wavelength infrared focal plane array. Optics Letters. 43: 591-594. PMID 29400848 DOI: 10.1364/Ol.43.000591 |
0.48 |
|
| 2018 |
Chevallier R, Haddadi A, McClintock R, Dehzangi A, Lopez-Dominguez V, Khalili Amiri P, Razeghi M. High Frequency Extended Short-Wavelength Infrared Heterojunction Photodetectors Based on InAs/GaSb/AlSb Type-II Superlattices Ieee Journal of Quantum Electronics. 54: 1-5. DOI: 10.1109/Jqe.2018.2871367 |
0.586 |
|
| 2018 |
Zhang Y, Haddadi A, Chevallier R, Dehzangi A, Razeghi M. Thin-Film Antimonide-Based Photodetectors Integrated on Si Ieee Journal of Quantum Electronics. 54: 1-7. DOI: 10.1109/Jqe.2018.2808405 |
0.453 |
|
| 2018 |
Demir I, Li H, Robin Y, McClintock R, Elagoz S, Razeghi M. Sandwich method to grow high quality AlN by MOCVD Journal of Physics D: Applied Physics. 51: 085104. DOI: 10.1088/1361-6463/Aaa926 |
0.601 |
|
| 2018 |
Wu DH, Dehzangi A, Zhang YY, Razeghi M. Demonstration of long wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition Applied Physics Letters. 112: 241103. DOI: 10.1063/1.5035308 |
0.47 |
|
| 2018 |
Zhou W, Slivken S, Razeghi M. Phase-locked, high power, mid-infrared quantum cascade laser arrays Applied Physics Letters. 112: 181106. DOI: 10.1063/1.5028281 |
0.675 |
|
| 2018 |
Wu DH, Zhang YY, Razeghi M. Room temperature operation of InxGa1−xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD Applied Physics Letters. 112: 111103. DOI: 10.1063/1.5021646 |
0.494 |
|
| 2018 |
Lu QY, Manna S, Wu DH, Slivken S, Razeghi M. Shortwave quantum cascade laser frequency comb for multi-heterodyne spectroscopy Applied Physics Letters. 112: 141104. DOI: 10.1063/1.5020747 |
0.682 |
|
| 2017 |
Choi S, Rogers DJ, Sandana EV, Bove P, Teherani FH, Nenstiel C, Hoffmann A, McClintock R, Razeghi M, Look D, Gentle A, Phillips MR, Ton-That C. Author Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface. Scientific Reports. 7: 15912. PMID 29146950 DOI: 10.1038/S41598-017-14857-0 |
0.514 |
|
| 2017 |
Razeghi M, Zhou W, Slivken S, Lu QY, Wu D, McClintock R. Recent progress of quantum cascade laser research from 3 to 12 μm at the Center for Quantum Devices [Invited]. Applied Optics. 56: H30-H44. PMID 29091664 DOI: 10.1364/Ao.56.000H30 |
0.785 |
|
| 2017 |
Chevallier R, Dehzangi A, Haddadii A, Razeghi M. Type-II superlattice-based extended short-wavelength infrared focal plane array with an AlAsSb/GaSb superlattice etch-stop layer to allow near-visible light detection. Optics Letters. 42: 4299-4302. PMID 29088148 DOI: 10.1364/Ol.42.004299 |
0.464 |
|
| 2017 |
Haddadi A, Razeghi M. Bias-selectable three-color short-, extended-short-, and mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices. Optics Letters. 42: 4275-4278. PMID 29088141 DOI: 10.1364/Ol.42.004275 |
0.481 |
|
| 2017 |
Chevallier R, Haddadi A, Razeghi M. Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors. Scientific Reports. 7: 12617. PMID 28974769 DOI: 10.1038/S41598-017-13016-9 |
0.452 |
|
| 2017 |
Slivken S, Wu D, Razeghi M. Monolithic beam steering in a mid-infrared, surface-emitting, photonic integrated circuit. Scientific Reports. 7: 8472. PMID 28814782 DOI: 10.1038/S41598-017-08916-9 |
0.627 |
|
| 2017 |
Choi S, Rogers DJ, Sandana EV, Bove P, Teherani FH, Nenstiel C, Hoffmann A, McClintock R, Razeghi M, Look D, Gentle A, Phillips MR, Ton-That C. Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface. Scientific Reports. 7: 7457. PMID 28784987 DOI: 10.1038/S41598-017-07568-Z |
0.592 |
|
| 2017 |
Haddadi A, Dehzangi A, Chevallier R, Adhikary S, Razeghi M. Bias-selectable nBn dual-band long-/very long-wavelength infrared photodetectors based on InAs/InAs1-xSbx/AlAs1-xSbx type-II superlattices. Scientific Reports. 7: 3379. PMID 28611381 DOI: 10.1038/S41598-017-03238-2 |
0.417 |
|
| 2017 |
Puybaret R, Rogers D, El Gmili Y, Sundaram S, Jordan M, Li X, Patriarche G, Teherani F, Sandana E, Bove P, Voss P, McClintock R, Razeghi M, Ferguson I, Salvestrini JP, et al. Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates. Nanotechnology. PMID 28358724 DOI: 10.1088/1361-6528/Aa6A43 |
0.621 |
|
| 2017 |
Lu Q, Wu D, Slivken S, Razeghi M. High efficiency quantum cascade laser frequency comb. Scientific Reports. 7: 43806. PMID 28262834 DOI: 10.1038/Srep43806 |
0.699 |
|
| 2017 |
Dehzangi A, Haddadi A, Adhikary S, Razeghi M. Impact of Scaling Base Thickness on the Performance of Heterojunction Phototransistors. Nanotechnology. PMID 28072392 DOI: 10.1088/1361-6528/Aa5849 |
0.396 |
|
| 2017 |
McClintock R, Razeghi M. Wide band gap III-nitride semiconductor devices Journal of Lasers, Optics & Photonics. 4. DOI: 10.4172/2469-410X-C1-016 |
0.582 |
|
| 2017 |
Zhou W, Wu D, McClintock R, Slivken S, Razeghi M. High performance monolithic, broadly tunable mid-infrared quantum cascade lasers Optica. 4: 1228. DOI: 10.1364/OPTICA.4.001228 |
0.609 |
|
| 2017 |
Sandana VE, Rogers DJ, Teherani FH, Bove P, McClintock R, Razeghi M. Imprinting of nanoporosity in lithium-doped nickel oxide through the use of sacrificial zinc oxide nanotemplates Proceedings of Spie. 10105. DOI: 10.1117/12.2263713 |
0.6 |
|
| 2017 |
Teherani FH, Rogers DJ, Sandana VE, Bove P, Ton-That C, Lem LLC, Chikoidze E, Neumann-Spallart M, Dumont Y, Huynh T, Phillips MR, Chapon P, McClintock R, Razeghi M. A study into the impact of sapphire substrate orientation on the properties of nominally-undoped β-Ga2O3 thin films grown by pulsed laser deposition Proceedings of Spie. 10105. DOI: 10.1117/12.2262757 |
0.33 |
|
| 2017 |
Razeghi M, Zhou W, McClintock R, Wu D. Progress in monolithic, broadband, widely tunable midinfrared quantum cascade lasers Optical Engineering. 57: 1. DOI: 10.1117/1.Oe.57.1.011018 |
0.642 |
|
| 2017 |
Lu QY, Manna S, Slivken S, Wu DH, Razeghi M. Dispersion compensated mid-infrared quantum cascade laser frequency comb with high power output Aip Advances. 7: 045313. DOI: 10.1063/1.4982673 |
0.669 |
|
| 2017 |
Wu DH, Razeghi M. High power, low divergent, substrate emitting quantum cascade ring laser in continuous wave operation Apl Materials. 5: 035505. DOI: 10.1063/1.4978810 |
0.45 |
|
| 2017 |
Haddadi A, Chevallier R, Dehzangi A, Razeghi M. Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier Applied Physics Letters. 110: 101104. DOI: 10.1063/1.4978378 |
0.467 |
|
| 2017 |
Haddadi A, Dehzangi A, Adhikary S, Chevallier R, Razeghi M. Background–limited long wavelength infrared InAs/InAs1− xSbxtype-II superlattice-based photodetectors operating at 110 K Apl Materials. 5: 035502. DOI: 10.1063/1.4975619 |
0.466 |
|
| 2017 |
Barbillon G, Sandana VE, Humbert C, Bélier B, Rogers DJ, Teherani FH, Bove P, McClintock R, Razeghi M. Study of Au coated ZnO nanoarrays for surface enhanced Raman scattering chemical sensing Journal of Materials Chemistry C. 5: 3528-3535. DOI: 10.1039/C7Tc00098G |
0.544 |
|
| 2017 |
Razeghi M. A lifetime of contributions to the world of semiconductors using the Czochralski invention Vacuum. 146: 308-328. DOI: 10.1016/J.Vacuum.2017.01.009 |
0.315 |
|
| 2017 |
Chevallier R, Haddadi A, Razeghi M. Toward realization of small-size dual-band long-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices Solid-State Electronics. 136: 51-54. DOI: 10.1016/J.Sse.2017.06.013 |
0.443 |
|
| 2017 |
Szerling A, Slivken S, Razeghi M. High peak power 16 μm InP-related quantum cascade laser Opto-Electronics Review. 25: 205-208. DOI: 10.1016/J.Opelre.2017.06.007 |
0.7 |
|
| 2016 |
Zhou W, Bandyopadhyay N, Wu D, McClintock R, Razeghi M. Monolithically, widely tunable quantum cascade lasers based on a heterogeneous active region design. Scientific Reports. 6: 25213. PMID 27270634 DOI: 10.1038/Srep25213 |
0.647 |
|
| 2016 |
Hoang AM, Dehzangi A, Adhikary S, Razeghi M. High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices. Scientific Reports. 6: 24144. PMID 27051979 DOI: 10.1038/Srep24144 |
0.415 |
|
| 2016 |
Lu Q, Wu D, Sengupta S, Slivken S, Razeghi M. Room temperature continuous wave, monolithic tunable THz sources based on highly efficient mid-infrared quantum cascade lasers. Scientific Reports. 6: 23595. PMID 27009375 DOI: 10.1038/Srep23595 |
0.685 |
|
| 2016 |
Lu Q, Razeghi M. Recent Advances in Room Temperature, High-Power Terahertz Quantum Cascade Laser Sources Based on Difference-Frequency Generation Photonics. 3: 42. DOI: 10.3390/Photonics3030042 |
0.46 |
|
| 2016 |
Slivken S, Razeghi M. Engineering Multi-Section Quantum Cascade Lasers for Broadband Tuning Photonics. 3: 41. DOI: 10.3390/Photonics3030041 |
0.679 |
|
| 2016 |
Razeghi M, Lu Q. RT-CW: widely tunable semiconductor THz QCL sources Proceedings of Spie. 9934: 993406. DOI: 10.1117/12.2240398 |
0.42 |
|
| 2016 |
Slivken SB, Razeghi M. High power, electrically tunable quantum cascade lasers Proceedings of Spie. 9755: 6. DOI: 10.1117/12.2216304 |
0.697 |
|
| 2016 |
Rajan A, Rogers DJ, Ton-That C, Zhu L, Phillips MR, Sundaram S, Gautier S, Moudakir T, El-Gmili Y, Ougazzaden A, Sandana VE, Teherani FH, Bove P, Prior KA, Djebbour Z, ... ... Razeghi M, et al. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/31/315105 |
0.611 |
|
| 2016 |
Haddadi A, Adhikary S, Dehzangi A, Razeghi M. Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices Applied Physics Letters. 109. DOI: 10.1063/1.4958715 |
0.429 |
|
| 2016 |
Pantzas K, Rogers DJ, Bove P, Sandana VE, Teherani FH, El Gmili Y, Molinari M, Patriarche G, Largeau L, Mauguin O, Suresh S, Voss PL, Razeghi M, Ougazzaden A. Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO Journal of Crystal Growth. 435: 105-109. DOI: 10.1016/J.Jcrysgro.2015.11.007 |
0.339 |
|
| 2016 |
Demir İ, Robin Y, McClintock R, Elagoz S, Zekentes K, Razeghi M. Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy Physica Status Solidi (a). 214: 1600363. DOI: 10.1002/Pssa.201600363 |
0.629 |
|
| 2015 |
Bandyopadhyay N, Chen M, Sengupta S, Slivken S, Razeghi M. Ultra-broadband quantum cascade laser, tunable over 760 cm-1, with balanced gain. Optics Express. 23: 21159-64. PMID 26367965 DOI: 10.1364/Oe.23.021159 |
0.694 |
|
| 2015 |
Razeghi M, Lu QY, Bandyopadhyay N, Zhou W, Heydari D, Bai Y, Slivken S. Quantum cascade lasers: from tool to product. Optics Express. 23: 8462-75. PMID 25968685 DOI: 10.1364/Oe.23.008462 |
0.771 |
|
| 2015 |
Chen G, Haddadi A, Hoang AM, Chevallier R, Razeghi M. Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application. Optics Letters. 40: 45-7. PMID 25531604 DOI: 10.1364/Ol.40.000045 |
0.68 |
|
| 2015 |
Razeghi M. Recent advances of III-V semiconductor quantum devices from deep UV (200 nm) to THZ (300 microns) Journal of Physical Chemistry & Biophysics. 5. DOI: 10.4172/2161-0398.C1.012 |
0.428 |
|
| 2015 |
Bandyopadhyay N, Chen M, Sengupta S, Slivken S, Razeghi M. Ultra-broadband quantum cascade laser, tunable over 760 cm-1, with balanced gain Optics Express. 23: 21159-21164. DOI: 10.1364/OE.23.021159 |
0.314 |
|
| 2015 |
Haddadi A, Suo XV, Adhikary S, Dianat P, Chevallier R, Hoang AM, Razeghi M. High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices Applied Physics Letters. 107. DOI: 10.1117/12.2228611 |
0.483 |
|
| 2015 |
Razeghi M, Ghazinejad M, Bayram C, Yu JS. Front Matter: Volume 9552 Proceedings of Spie. 955201. DOI: 10.1117/12.2205074 |
0.5 |
|
| 2015 |
Mohseni H, Agahi MH, Razeghi M. Front Matter: Volume 9550 Proceedings of Spie. 955001. DOI: 10.1117/12.2205070 |
0.456 |
|
| 2015 |
Razeghi M, Lu QY, Bandyopadhyay N, Slivken S. Recent development of high power, widely tunable THz quantum cascade laser sources based on difference-frequency generation Proceedings of Spie - the International Society For Optical Engineering. 9647. DOI: 10.1117/12.2202967 |
0.325 |
|
| 2015 |
McClintock R, Razeghi M. Solar-blind photodetectors and focal plane arrays based on AlGaN Proceedings of Spie - the International Society For Optical Engineering. 9555. DOI: 10.1117/12.2195390 |
0.634 |
|
| 2015 |
McClintock R, Razeghi M. Growth of AlGaN on silicon substrates: A novel way to make back-illuminated ultraviolet photodetectors Proceedings of Spie - the International Society For Optical Engineering. 9555. DOI: 10.1117/12.2195388 |
0.599 |
|
| 2015 |
McClintock R, Razeghi M. Ultraviolet avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 9555. DOI: 10.1117/12.2195387 |
0.663 |
|
| 2015 |
Razeghi M, Lu QY, Bandyopadhyay N, Slivken S. Recent development of high-power widely tunable THz quantum cascade laser sources based on difference-frequency generation Proceedings of Spie - the International Society For Optical Engineering. 9585. DOI: 10.1117/12.2192221 |
0.682 |
|
| 2015 |
Sandana VE, Rogers DJ, Hosseini Teherani F, Bove P, Ben Sedrine N, Correia MR, Monteiro T, McClintock R, Razeghi M. Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD Proceedings of Spie - the International Society For Optical Engineering. 9364. DOI: 10.1117/12.2177427 |
0.618 |
|
| 2015 |
Rogers DJ, Sundaram S, El Gmili Y, Teherani FH, Bove P, Sandana V, Voss PL, Ougazzaden A, Rajan A, Prior KA, McClintock R, Razeghi M. Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers Proceedings of Spie - the International Society For Optical Engineering. 9364. DOI: 10.1117/12.2175897 |
0.629 |
|
| 2015 |
Bayram C, Ott J, Shiu KT, Cheng CW, Zhu Y, Kim J, Sadana DK, Razeghi M. Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100) Proceedings of Spie - the International Society For Optical Engineering. 9370. DOI: 10.1117/12.2082894 |
0.651 |
|
| 2015 |
Slivken S, Sengupta S, Razeghi M. High power continuous operation of a widely tunable quantum cascade laser with an integrated amplifier Applied Physics Letters. 107. DOI: 10.1063/1.4938005 |
0.693 |
|
| 2015 |
Heydari D, Bai Y, Bandyopadhyay N, Slivken S, Razeghi M. High brightness angled cavity quantum cascade lasers Applied Physics Letters. 106: 091105. DOI: 10.1063/1.4914477 |
0.764 |
|
| 2015 |
Lu QY, Razeghi M, Slivken S, Bandyopadhyay N, Bai Y, Zhou WJ, Chen M, Heydari D, Haddadi A, McClintock R, Amanti M, Sirtori C. High power frequency comb based on mid-infrared quantum cascade laser at λ ∼ 9 μ m Applied Physics Letters. 106. DOI: 10.1063/1.4907646 |
0.811 |
|
| 2015 |
Haddadi A, Chevallier R, Chen G, Hoang AM, Razeghi M. Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1-xSbx type-II superlattices Applied Physics Letters. 106. DOI: 10.1063/1.4905565 |
0.667 |
|
| 2014 |
Razeghi M, Nguyen BM. Advances in mid-infrared detection and imaging: a key issues review. Reports On Progress in Physics. Physical Society (Great Britain). 77: 082401. PMID 25093341 DOI: 10.1088/0034-4885/77/8/082401 |
0.611 |
|
| 2014 |
Razeghi M. Quantum engineering of semiconductor atomic structures Journal of Physical Chemistry & Biophysics. DOI: 10.4172/2161-0398.S1.001 |
0.321 |
|
| 2014 |
McClintock R, Razeghi M. GaN based optoelectronic devices: From ultraviolet detectors and visible emitters towards thz intersubband devices Ecs Transactions. 64: 19-26. DOI: 10.1149/06407.0019ecst |
0.563 |
|
| 2014 |
Mohseni H, Agahi MH, Razeghi M. Front Matter: Volume 9166 Proceedings of Spie. 916601. DOI: 10.1117/12.2081203 |
0.456 |
|
| 2014 |
Razeghi M, Lu QY, Bandyopadhyay N, Slivken S, Bai Y. Room temperature continuous wave THz quantum cascade laser source with high power operation Proceedings of Spie. 9199: 919902. DOI: 10.1117/12.2064802 |
0.771 |
|
| 2014 |
Sandana VE, Rogers DJ, Hosseini Teherani F, Bove P, McClintock R, Razeghi M. Nickel oxide growth on Si (111), c-Al2O3 and FTO/glass by pulsed laser deposition Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2057620 |
0.605 |
|
| 2014 |
Razeghi M, Haddadi A, Chen G, Hoang AM, Chevallier R, Callewaert F. Low-frequency noise in mid-wavelength infrared InAs/GaSb type-II superlattice based focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 9070. DOI: 10.1117/12.2057505 |
0.593 |
|
| 2014 |
Razeghi M, Lu Q, Bandyopadhyay N, Slivken SB, Bai Y. Recent progress of room temperature THz sources based on nonlinear frequency mixing in quantum cascade lasers Proceedings of Spie. 9100. DOI: 10.1117/12.2054324 |
0.767 |
|
| 2014 |
Rajan A, Sundaram S, El Gmili Y, Voss PL, Pantzas K, Moudakir T, Ougazzaden A, Rogers DJ, Hosseini Teherani F, Sandana VE, Bove P, Prior K, McClintock R, Razeghi M. Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2043704 |
0.603 |
|
| 2014 |
Cicek E, McClintock R, Haddadi A, Rojas WAG, Razeghi M. High performance solar-blind ultraviolet 320 × 256 focal plane arrays based on AlxGa1-xN Ieee Journal of Quantum Electronics. 50: 591-595. DOI: 10.1109/Jqe.2014.2328434 |
0.648 |
|
| 2014 |
Razeghi M. Superlattice-based quantum devices: From theory to practical applications Waves in Random and Complex Media. 24: 240-249. DOI: 10.1080/17455030.2014.899724 |
0.42 |
|
| 2014 |
Lu QY, Slivken S, Bandyopadhyay N, Bai Y, Razeghi M. Widely tunable room temperature semiconductor terahertz source Applied Physics Letters. 105: 201102. DOI: 10.1063/1.4902245 |
0.756 |
|
| 2014 |
Haddadi A, Chen G, Chevallier R, Hoang AM, Razeghi M. InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection Applied Physics Letters. 105. DOI: 10.1063/1.4896271 |
0.673 |
|
| 2014 |
Bandyopadhyay N, Bai Y, Slivken S, Razeghi M. High power operation of λ ∼ 5.2-11 μ m strain balanced quantum cascade lasers based on the same material composition Applied Physics Letters. 105. DOI: 10.1063/1.4893746 |
0.742 |
|
| 2014 |
Hoang AM, Chen G, Chevallier R, Haddadi A, Razeghi M. High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection Applied Physics Letters. 104: 251105. DOI: 10.1063/1.4884947 |
0.703 |
|
| 2014 |
Lu QY, Bandyopadhyay N, Slivken S, Bai Y, Razeghi M. Continuous operation of a monolithic semiconductor terahertz source at room temperature Applied Physics Letters. 104: 221105. DOI: 10.1063/1.4881182 |
0.765 |
|
| 2014 |
Chen G, Hoang AM, Razeghi M. Evaluating the size-dependent quantum efficiency loss in a SiO 2-Y2O3 hybrid gated type-II InAs/GaSb long-infrared photodetector array Applied Physics Letters. 104. DOI: 10.1063/1.4868486 |
0.683 |
|
| 2014 |
Callewaert F, Hoang AM, Razeghi M. Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice Applied Physics Letters. 104. DOI: 10.1063/1.4864403 |
0.42 |
|
| 2014 |
Rogers DJ, Sandana VE, Gautier S, Moudakir T, Abid M, Ougazzaden A, Teherani FH, Bove P, Molinari M, Troyon M, Peres M, Soares MJ, Neves AJ, Monteiro T, McGrouther D, ... ... Razeghi M, et al. Core-shell GaN-ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (111) as a basis for improved InGaN-based photovoltaics and LEDs Photonics and Nanostructures - Fundamentals and Applications. DOI: 10.1016/J.Photonics.2015.03.003 |
0.629 |
|
| 2014 |
Razeghi M, Haddadi A, Hoang AM, Chen G, Bogdanov S, Darvish SR, Callewaert F, Bijjam PR, McClintock R. Antimonide-based type II superlattices: A superior candidate for the third generation of infrared imaging systems Journal of Electronic Materials. 43: 2802-2807. DOI: 10.1007/S11664-014-3080-Y |
0.771 |
|
| 2014 |
Stefański P, Lewicki R, Sanchez NP, Tarka J, Griffin RJ, Razeghi M, Tittel FK. Measurements of carbon monoxide mixing ratios in Houston using a compact high-power CW DFB-QCL-based QEPAS sensor Applied Physics B: Lasers and Optics. 117: 519-526. DOI: 10.1007/S00340-014-5863-5 |
0.315 |
|
| 2014 |
Sandana VE, Rogers DJ, Teherani FH, Bove P, Razeghi M. Investigation of the factors influencing nanostructure array growth by PLD towards reproducible wafer-scale growth Physica Status Solidi (a) Applications and Materials Science. 211: 449-454. DOI: 10.1002/Pssa.201300497 |
0.356 |
|
| 2014 |
Bayram C, Ott JA, Shiu K, Cheng C, Zhu Y, Kim J, Razeghi M, Sadana DK. Gallium Nitride: Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy (Adv. Funct. Mater. 28/2014) Advanced Functional Materials. 24: 4491-4491. DOI: 10.1002/Adfm.201470185 |
0.565 |
|
| 2014 |
Bayram C, Ott JA, Shiu KT, Cheng CW, Zhu Y, Kim J, Razeghi M, Sadana DK. Cubic phase GaN on nano-grooved Si (100) via maskless selective area epitaxy Advanced Functional Materials. 24: 4492-4496. DOI: 10.1002/Adfm.201304062 |
0.635 |
|
| 2013 |
Ma Y, Lewicki R, Razeghi M, Tittel FK. QEPAS based ppb-level detection of CO and N2O using a high power CW DFB-QCL. Optics Express. 21: 1008-19. PMID 23388995 DOI: 10.1364/Oe.21.001008 |
0.328 |
|
| 2013 |
Lu QY, Bandyopadhyay N, Slivken S, Bai Y, Razeghi M. High performance terahertz quantum cascade laser sources based on intracavity difference frequency generation. Optics Express. 21: 968-73. PMID 23388990 DOI: 10.1364/Oe.21.000968 |
0.761 |
|
| 2013 |
Huang EK, Haddadi A, Chen G, Hoang AM, Razeghi M. Active and passive infrared imager based on short-wave and mid-wave type-II superlattice dual-band detectors. Optics Letters. 38: 22-4. PMID 23282825 DOI: 10.1364/Ol.38.000022 |
0.8 |
|
| 2013 |
Razeghi M, Bandyopadhyay N, Bai Y, Lu Q, Slivken S. Recent advances in mid infrared (3-5µm) Quantum Cascade Lasers Optical Materials Express. 3: 1872. DOI: 10.1364/Ome.3.001872 |
0.772 |
|
| 2013 |
Zhou C, Vurgaftman I, Canedy CL, Kim S, Kim M, Bewley WW, Merritt CD, Abell J, Meyer JR, Hoang A, Haddadi A, Razeghi M, Grayson M. Thermal conductivity tensors of the cladding and active layers of antimonide infrared lasers and detectors Optical Materials Express. 3: 1632-1640. DOI: 10.1364/Ome.3.001632 |
0.398 |
|
| 2013 |
Bayram C, Sadana DK, Razeghi M. AlGaN-based intersubband device technology The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications. 175-206. DOI: 10.1117/3.1002245.Ch8 |
0.514 |
|
| 2013 |
Razeghi M, Tsao S. Quantum dots for infrared focal plane arrays grown by MOCVD The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications. 435-490. DOI: 10.1117/3.1002245.Ch19 |
0.617 |
|
| 2013 |
Razeghi M. Quantum cascade lasers for IR and THz spectroscopy Spie Newsroom. DOI: 10.1117/2.1201312.005239 |
0.408 |
|
| 2013 |
Mohseni H, Agahi MH, Razeghi M. Front Matter: Volume 8812 Proceedings of Spie. 881201. DOI: 10.1117/12.2034142 |
0.456 |
|
| 2013 |
Razeghi M, Lu Q, Bandyopadhyay N, Slivken SB, Bai Y. Room temperature compact THz sources based on quantum cascade laser technology Proceedings of Spie. 8846: 884602. DOI: 10.1117/12.2027979 |
0.776 |
|
| 2013 |
Razeghi M, Haddadi A, Hoang AM, Chen G, Ramezani-Darvish S, Bijjam P. High-performance bias-selectable dual-band mid-/long-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb Type-II superlattices Proceedings of Spie. 8704. DOI: 10.1117/12.2019147 |
0.653 |
|
| 2013 |
Bandyopadhyay N, Bai Y, Tsao S, Nida S, Slivken SB, Razeghi M. Continuous-wave room-temperature operation of λ ∼ 3 μm quantum cascade laser Proceedings of Spie. 8631. DOI: 10.1117/12.2019105 |
0.816 |
|
| 2013 |
Hoang AM, Chen G, Haddadi A, Razeghi M. High performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices Proceedings of Spie. 8631. DOI: 10.1117/12.2019103 |
0.683 |
|
| 2013 |
Lu QY, Bandyopadhyay N, Slivken S, Bai Y, Razeghi M. Widely-tuned room-temperature terahertz quantum cascade laser sources Proceedings of Spie. 8631: 863108. DOI: 10.1117/12.2019101 |
0.77 |
|
| 2013 |
Rogers DJ, Teherani FH, Bove P, Lusson A, Razeghi M. Investigation of MgZnO/ZnO heterostructures grown on c-sapphire substrates by pulsed laser deposition Proceedings of Spie - the International Society For Optical Engineering. 8626. DOI: 10.1117/12.2013601 |
0.356 |
|
| 2013 |
Rogers DJ, Bove P, Teherani FH, Pantzas K, Moudakir T, Orsal G, Patriarche G, Gautier S, Ougazzaden A, Sandana VE, McClintock R, Razeghi M. Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates Proceedings of Spie - the International Society For Optical Engineering. 8626. DOI: 10.1117/12.2010046 |
0.603 |
|
| 2013 |
Bayram C, Shiu KT, Zhu Y, Cheng CW, Sadana DK, Teherani FH, Rogers DJ, Sandana VE, Bove P, Zhang Y, Gautier S, Cho CY, Cicek E, Vashaei Z, McClintock R, ... Razeghi M, et al. Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices Proceedings of Spie - the International Society For Optical Engineering. 8626. DOI: 10.1117/12.2009999 |
0.743 |
|
| 2013 |
Bayram C, Shiu KT, Zhu Y, Cheng CW, Sadana DK, Vashaei Z, Cicek E, McClintock R, Razeghi M. Gallium nitride on silicon for consumer and scalable photonics Proceedings of Spie - the International Society For Optical Engineering. 8631. DOI: 10.1117/12.2008788 |
0.718 |
|
| 2013 |
Slivken SB, Bandyopadhyay N, Tsao S, Nida S, Bai Y, Lu Q, Razeghi M. Dual section quantum cascade lasers with wide electrical tuning Proceedings of Spie. 8631. DOI: 10.1117/12.2008506 |
0.827 |
|
| 2013 |
Slivken S, Bandyopadhyay N, Bai Y, Lu QY, Razeghi M. Extended electrical tuning of quantum cascade lasers with digital concatenated gratings Applied Physics Letters. 103: 231110. DOI: 10.1063/1.4841635 |
0.765 |
|
| 2013 |
Chen G, Hoang AM, Bogdanov S, Haddadi A, Darvish SR, Razeghi M. Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array Applied Physics Letters. 103. DOI: 10.1063/1.4833026 |
0.756 |
|
| 2013 |
Cicek E, McClintock R, Cho CY, Rahnema B, Razeghi M. AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89% Applied Physics Letters. 103. DOI: 10.1063/1.4829065 |
0.658 |
|
| 2013 |
Cicek E, McClintock R, Cho CY, Rahnema B, Razeghi M. AlxGa1-xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate Applied Physics Letters. 103. DOI: 10.1063/1.4828497 |
0.624 |
|
| 2013 |
Chen G, Hoang AM, Bogdanov S, Haddadi A, Bijjam PR, Nguyen BM, Razeghi M. Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement Applied Physics Letters. 103. DOI: 10.1063/1.4813479 |
0.708 |
|
| 2013 |
Lu QY, Bandyopadhyay N, Slivken S, Bai Y, Razeghi M. Room temperature terahertz quantum cascade laser sources with 215 μW output power through epilayer-down mounting Applied Physics Letters. 103: 011101. DOI: 10.1063/1.4812814 |
0.779 |
|
| 2013 |
Cho CY, Zhang Y, Cicek E, Rahnema B, Bai Y, McClintock R, Razeghi M. Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111) Applied Physics Letters. 102. DOI: 10.1063/1.4809521 |
0.735 |
|
| 2013 |
Cicek E, McClintock R, Vashaei Z, Zhang Y, Gautier S, Cho CY, Razeghi M. Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4790839 |
0.574 |
|
| 2013 |
Hoang AM, Chen G, Haddadi A, Razeghi M. Demonstration of high performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices Applied Physics Letters. 102: 011108. DOI: 10.1063/1.4773593 |
0.664 |
|
| 2013 |
Zhang Y, Gautier S, Cho CY, Cicek E, Vashaei Z, McClintock R, Bayram C, Bai Y, Razeghi M. Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111) Applied Physics Letters. 102. DOI: 10.1063/1.4773565 |
0.791 |
|
| 2013 |
Gautier S, Moudakir T, Patriarche G, Rogers DJ, Sandana VE, Téherani FH, Bove P, El Gmili Y, Pantzas K, Sundaram S, Troadec D, Voss PL, Razeghi M, Ougazzaden A. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire Journal of Crystal Growth. 370: 63-67. DOI: 10.1016/J.Jcrysgro.2012.08.048 |
0.356 |
|
| 2013 |
Razeghi M, Haddadi A, Hoang AM, Huang EK, Chen G, Bogdanov S, Darvish SR, Callewaert F, McClintock R. Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices Infrared Physics and Technology. 59: 41-52. DOI: 10.1016/J.Infrared.2012.12.008 |
0.813 |
|
| 2013 |
Sandana VE, Rogers DJ, Teherani FH, Bove P, Molinari M, Troyon M, Largeteau A, Demazeau G, Scott C, Orsal G, Drouhin HJ, Ougazzaden A, Razeghi M. Growth of "moth-eye" ZnO nanostructures on Si(111), c-Al2O3, ZnO and steel substrates by pulsed laser deposition Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 1317-1321. DOI: 10.1002/Pssc.201200975 |
0.366 |
|
| 2012 |
Huang EK, Hoang MA, Chen G, Ramezani-Darvish S, Haddadi A, Razeghi M. Highly selective two-color mid-wave and long-wave infrared detector hybrid based on Type-II superlattices. Optics Letters. 37: 4744-6. PMID 23164899 DOI: 10.1364/Ol.37.004744 |
0.79 |
|
| 2012 |
Huang EK, Pour SA, Hoang MA, Haddadi A, Razeghi M, Tidrow MZ. Low irradiance background limited type-II superlattice MWIR M-barrier imager. Optics Letters. 37: 2025-7. PMID 22660109 DOI: 10.1364/Ol.37.002025 |
0.723 |
|
| 2012 |
Cicek E, Vashaei Z, Huang EK, McClintock R, Razeghi M. Al(x)Ga(1-x)N-based deep-ultraviolet 320×256 focal plane array. Optics Letters. 37: 896-8. PMID 22378430 DOI: 10.1364/Ol.37.000896 |
0.788 |
|
| 2012 |
Cicek E, Vashaei Z, Huang EKW, McClintock R, Razeghi M. AlxGa1?xN-based deep-ultraviolet 320×256 focal plane array Optics Letters. 37: 896-898. DOI: 10.1364/OL.37.000896 |
0.611 |
|
| 2012 |
Rogers DJ, Teherani FH, Bove P, McClintock R, Razeghi M. Improved LEDs and photovoltaics by hybridization & and nanostructuring Spie Newsroom. DOI: 10.1117/2.1201206.004238 |
0.534 |
|
| 2012 |
Rogers DJ, Carroll C, Bove P, Sandana VE, Goubert L, Largeteau A, Teherani FH, Demazeau G, McClintock R, Drouhin HJ, Razeghi M. Energy harvesting from millimetric ZnO single wire piezo-generators Proceedings of Spie - the International Society For Optical Engineering. 8263. DOI: 10.1117/12.927621 |
0.566 |
|
| 2012 |
Ulmer MP, Cicek E, McClintock R, Vashaei Z, Razeghi M. Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 8453. DOI: 10.1117/12.924173 |
0.6 |
|
| 2012 |
Razeghi M, Pour SA. Competing technology for high-speed HOT-IR-FPAs Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.923837 |
0.444 |
|
| 2012 |
Razeghi M, Pour SA. Revolutionary development of Type-II GaSb/InAs superlatices for third generation of IR imaging Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.923833 |
0.376 |
|
| 2012 |
Rogers DJ, Ougazzaden A, Sandana VE, Moudakir T, Ahaitouf A, Teherani FH, Gautier S, Goubert L, Davidson IA, Prior KA, McClintock RP, Bove P, Drouhin HJ, Razeghi M. Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire Proceedings of Spie - the International Society For Optical Engineering. 8263. DOI: 10.1117/12.916013 |
0.592 |
|
| 2012 |
Haddadi A, Darvish SR, Chen G, Hoang AM, Nguyen BM, Razeghi M. Low frequency noise in 1024×1024 long wavelength infrared focal plane array based on type-II InAs/GaSb superlattice Proceedings of Spie. 8268. DOI: 10.1117/12.913983 |
0.64 |
|
| 2012 |
McClintock R, Haddadi A, Razeghi M. Free-space optical communication using mid-infrared or solar-blind ultraviolet sources and detectors Proceedings of Spie - the International Society For Optical Engineering. 8268. DOI: 10.1117/12.913980 |
0.562 |
|
| 2012 |
Chen G, Nguyen BM, Hoang AM, Huang EK, Darvish SR, Razeghi M. Suppression of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors Proceedings of Spie - the International Society For Optical Engineering. 8268. DOI: 10.1117/12.913741 |
0.806 |
|
| 2012 |
Bayram C, Sadana DK, Vashaei Z, Razeghi M. Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance Proceedings of Spie - the International Society For Optical Engineering. 8268. DOI: 10.1117/12.913740 |
0.674 |
|
| 2012 |
Huang EKW, Razeghi M. World's first demonstration of type-II superlattice dual band 640x512 LWIR focal plane array Proceedings of Spie - the International Society For Optical Engineering. 8268. DOI: 10.1117/12.913662 |
0.389 |
|
| 2012 |
Bai Y, Tsao S, Bandyopadhyay N, Slivken S, Lu QY, Razeghi M. Substrate emission quantum cascade ring lasers with room temperature continuous wave operation Proceedings of Spie. 8268. DOI: 10.1117/12.913655 |
0.815 |
|
| 2012 |
Mohseni H, Agahi MH, Razeghi M. Front Matter: Volume 8460 Proceedings of Spie. 846001. DOI: 10.1117/12.2009151 |
0.456 |
|
| 2012 |
Haddadi A, Ramezani-Darvish S, Chen G, Hoang AM, Nguyen B, Razeghi M. High Operability 1024$\,\times\,$1024 Long Wavelength Type-II Superlattice Focal Plane Array Ieee Journal of Quantum Electronics. 48: 221-228. DOI: 10.1109/Jqe.2011.2175903 |
0.747 |
|
| 2012 |
Lu QY, Bandyopadhyay N, Slivken S, Bai Y, Razeghi M. Widely tuned room temperature terahertz quantum cascade laser sources based on difference-frequency generation Applied Physics Letters. 101: 251121. DOI: 10.1063/1.4773189 |
0.767 |
|
| 2012 |
Bandyopadhyay N, Bai Y, Tsao S, Nida S, Slivken S, Razeghi M. Room temperature continuous wave operation of λ ∼ 3–3.2 μm quantum cascade lasers Applied Physics Letters. 101: 241110. DOI: 10.1063/1.4769038 |
0.838 |
|
| 2012 |
Chen G, Huang EK, Hoang AM, Bogdanov S, Darvish SR, Razeghi M. Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors Applied Physics Letters. 101. DOI: 10.1063/1.4767905 |
0.827 |
|
| 2012 |
Bai Y, Slivken S, Lu QY, Bandyopadhyay N, Razeghi M. Angled cavity broad area quantum cascade lasers Applied Physics Letters. 101: 081106. DOI: 10.1063/1.4747447 |
0.763 |
|
| 2012 |
Slivken S, Bandyopadhyay N, Tsao S, Nida S, Bai Y, Lu QY, Razeghi M. Sampled grating, distributed feedback quantum cascade lasers with broad tunability and continuous operation at room temperature Applied Physics Letters. 100: 261112. DOI: 10.1063/1.4732801 |
0.83 |
|
| 2012 |
Hoang AM, Chen G, Haddadi A, Abdollahi Pour S, Razeghi M. Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices Applied Physics Letters. 100. DOI: 10.1063/1.4720094 |
0.836 |
|
| 2012 |
Bandyopadhyay N, Slivken S, Bai Y, Razeghi M. High power, continuous wave, room temperature operation of λ ∼ 3.4 μm and λ ∼ 3.55 μm InP-based quantum cascade lasers Applied Physics Letters. 100. DOI: 10.1063/1.4719110 |
0.782 |
|
| 2012 |
Zhou C, Nguyen B-, Razeghi M, Grayson M. Thermal Conductivity of InAs/GaSb Type II Superlattice Journal of Electronic Materials. 41: 2322-2325. DOI: 10.1007/S11664-012-2146-Y |
0.384 |
|
| 2011 |
Huang EK, Haddadi A, Chen G, Nguyen BM, Hoang MA, McClintock R, Stegall M, Razeghi M. Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance. Optics Letters. 36: 2560-2. PMID 21725479 DOI: 10.1364/Ol.36.002560 |
0.796 |
|
| 2011 |
Razeghi M, Pour SA, Huang EK, Chen G, Haddadi A, Nguyen BM. Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures Opto-Electronics Review. 19: 261-269. DOI: 10.2478/S11772-011-0028-0 |
0.79 |
|
| 2011 |
Huang EKW, Haddadi A, Chen G, Nguyen BM, Hoang MA, McClintock R, Stegall M, Razeghi M. Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance Optics Letters. 36: 2560-2562. DOI: 10.1364/OL.36.002560 |
0.694 |
|
| 2011 |
Razeghi M. Type II superlattice enables high operating temperature Spie Newsroom. DOI: 10.1117/2.1201110.003870 |
0.337 |
|
| 2011 |
Razeghi M. Efficient laser arrays for infrared spectroscopy Spie Newsroom. DOI: 10.1117/2.1201105.003714 |
0.364 |
|
| 2011 |
Mohseni H, Agahi MH, Razeghi M. Front Matter: Volume 8099 Proceedings of Spie. 809901. DOI: 10.1117/12.905040 |
0.456 |
|
| 2011 |
Cicek E, Vashaei Z, McClintock R, Razeghi M. Deep ultraviolet (254 nm) focal plane array Proceedings of Spie - the International Society For Optical Engineering. 8155. DOI: 10.1117/12.904984 |
0.659 |
|
| 2011 |
Razeghi M. Recent advances of terahertz quantum cascade lasers Proceedings of Spie - the International Society For Optical Engineering. 8119. DOI: 10.1117/12.899131 |
0.38 |
|
| 2011 |
Razeghi M. Toward realizing high power semiconductor terahertz laser sources at room temperature Proceedings of Spie - the International Society For Optical Engineering. 8023. DOI: 10.1117/12.887986 |
0.475 |
|
| 2011 |
Razeghi M, Huang EK, Nguyen BM, Ramezani-Darvish S, Pour SA, Chen G, Haddadi A, Hoang MA. Recent advances in high performance antimonide-based superlattice FPAs Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.887597 |
0.816 |
|
| 2011 |
Gökden B, Bai Y, Bandyopadhyay N, Slivken S, Razeghi M. High peak power (34 W) photonic crystal distributed feedback quantum cascade lasers Proceedings of Spie. 7946: 794606. DOI: 10.1117/12.881397 |
0.838 |
|
| 2011 |
Ulmer MP, McClintock R, Razeghi M. Advances in UV sensitive visible blind GaN-based APDs Proceedings of Spie - the International Society For Optical Engineering. 7945. DOI: 10.1117/12.879942 |
0.627 |
|
| 2011 |
Rogers DJ, Sandana VE, Teherani FH, McClintock R, Razeghi M, Drouhin HJ. Amorphous ZnO films grown by room temperature pulsed laser deposition on paper and mylar for transparent electronics applications Proceedings of Spie - the International Society For Optical Engineering. 7940. DOI: 10.1117/12.879928 |
0.63 |
|
| 2011 |
Nguyen BM, Chen G, Hoang MA, Razeghi M. Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer Proceedings of Spie. 7945. DOI: 10.1117/12.879860 |
0.675 |
|
| 2011 |
Vashaei Z, Bayram C, McClintock R, Razeghi M. Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes Proceedings of Spie - the International Society For Optical Engineering. 7945. DOI: 10.1117/12.879858 |
0.73 |
|
| 2011 |
Gökden B, Bai Y, Tsao S, Bandyopadhyay N, Slivken SB, Razeghi M. High power 1D and 2D photonic crystal distributed feedback quantum cascade lasers Proceedings of Spie. 7945. DOI: 10.1117/12.879855 |
0.829 |
|
| 2011 |
Razeghi M, Bai Y, Bandyopadhyay N, Gokden B, Lu QY, Slivken S. Recent advances in IR semiconductor laser diodes and future trends 2011 Ieee Photonics Society Summer Topical Meeting Series. 55-56. DOI: 10.1109/PHOSST.2011.6000041 |
0.786 |
|
| 2011 |
Nguyen B, Chen G, Hoang M, Razeghi M. Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer Ieee Journal of Quantum Electronics. 47: 686-690. DOI: 10.1109/Jqe.2010.2103049 |
0.763 |
|
| 2011 |
Razeghi M. III-nitride optoelectronic devices: From ultraviolet toward terahertz Ieee Photonics Journal. 3: 263-267. DOI: 10.1109/Jphot.2011.2135340 |
0.398 |
|
| 2011 |
Razeghi M. Stable single mode terahertz semiconductor sources at room temperature 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135180 |
0.333 |
|
| 2011 |
Abdollahi Pour S, Movaghar B, Razeghi M. Tight-binding theory for the thermal evolution of optical band gaps in semiconductors and superlattices Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.115331 |
0.787 |
|
| 2011 |
Bai Y, Tsao S, Bandyopadhyay N, Slivken S, Lu QY, Caffey D, Pushkarsky M, Day T, Razeghi M. High power, continuous wave, quantum cascade ring laser Applied Physics Letters. 99. DOI: 10.1063/1.3672049 |
0.82 |
|
| 2011 |
Chen G, Nguyen BM, Hoang AM, Huang EK, Darvish SR, Razeghi M. Elimination of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors Applied Physics Letters. 99. DOI: 10.1063/1.3658627 |
0.811 |
|
| 2011 |
Lu QY, Bandyopadhyay N, Slivken S, Bai Y, Razeghi M. Room temperature single-mode terahertz sources based on intracavity difference-frequency generation in quantum cascade lasers Applied Physics Letters. 99: 131106. DOI: 10.1063/1.3645016 |
0.772 |
|
| 2011 |
Nguyen BM, Chen G, Hoang AM, Abdollahi Pour S, Bogdanov S, Razeghi M. Effect of contact doping in superlattice-based minority carrier unipolar detectors Applied Physics Letters. 99. DOI: 10.1063/1.3613927 |
0.823 |
|
| 2011 |
Lu QY, Bai Y, Bandyopadhyay N, Slivken S, Razeghi M. 2.4 W room temperature continuous wave operation of distributed feedback quantum cascade lasers Applied Physics Letters. 98: 181106. DOI: 10.1063/1.3588412 |
0.765 |
|
| 2011 |
Bai Y, Bandyopadhyay N, Tsao S, Slivken S, Razeghi M. Room temperature quantum cascade lasers with 27% wall plug efficiency Applied Physics Letters. 98: 181102. DOI: 10.1063/1.3586773 |
0.838 |
|
| 2011 |
Bogdanov S, Nguyen BM, Hoang AM, Razeghi M. Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes Applied Physics Letters. 98. DOI: 10.1063/1.3584853 |
0.644 |
|
| 2011 |
Pour SA, Huang EK, Chen G, Haddadi A, Nguyen BM, Razeghi M. High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices Applied Physics Letters. 98. DOI: 10.1063/1.3573867 |
0.82 |
|
| 2011 |
Manurkar P, Darvish S, Nguyen B, Razeghi M, Hubbs J. Erratum: “High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices” [Appl. Phys. Lett. 97, 193505 (2010)] Applied Physics Letters. 98: 089902. DOI: 10.1063/1.3557024 |
0.332 |
|
| 2011 |
Bai Y, Darvish SR, Bandyopadhyay N, Slivken S, Razeghi M. Optimizing facet coating of quantum cascade lasers for low power consumption Journal of Applied Physics. 109: 053103. DOI: 10.1063/1.3553863 |
0.755 |
|
| 2011 |
Besikci C, Gunapala SD, Razeghi M. PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON QUANTUM STRUCTURE INFRARED PHOTODETECTOR (QSIP) 2010 Preface Infrared Physics & Technology. 54. DOI: 10.1016/J.Infrared.2010.12.002 |
0.369 |
|
| 2010 |
Mohseni H, Razeghi M. Front Matter: Volume 7759 Proceedings of Spie. 775901. DOI: 10.1117/12.878479 |
0.456 |
|
| 2010 |
McClintock R, Cicek E, Vashaei Z, Bayram C, Razeghi M, Ulmer MP. III-Nitride based avalanche photo detectors Proceedings of Spie - the International Society For Optical Engineering. 7780. DOI: 10.1117/12.863962 |
0.729 |
|
| 2010 |
Cicek E, Vashaei Z, Bayram C, McClintock R, Razeghi M, Ulmer MP. Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates Proceedings of Spie - the International Society For Optical Engineering. 7780. DOI: 10.1117/12.863905 |
0.749 |
|
| 2010 |
Gökden B, Slivken SB, Razeghi M. High power photonic crystal distributed feedback quantum cascade lasers emitting at 4.5 μm Proceedings of Spie - the International Society For Optical Engineering. 7608. DOI: 10.1117/12.855649 |
0.658 |
|
| 2010 |
Razeghi M, Huang EK, Nguyen BM, Abdollahi Pour S, Delaunay PY. Type-II antimonide-based superlattices for the third generation infrared focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.849527 |
0.817 |
|
| 2010 |
Tsao S, Myzaferi A, Razeghi M. High performance quantum dot-quantum well infrared focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 7605. DOI: 10.1117/12.846252 |
0.365 |
|
| 2010 |
Slivken S, Bai Y, Gokden B, Darvish SR, Razeghi M. Current status and potential of high-power mid-infrared intersubband lasers Proceedings of Spie - the International Society For Optical Engineering. 7608. DOI: 10.1117/12.842637 |
0.791 |
|
| 2010 |
Razeghi M, Nguyen BM, Delaunay PY, Abdollahi Pour S, Huang EKW, Manukar P, Bogdanov S, Chen G. High-operating temperature MWIR photon detectors based on type II InAs/GaSb superlattice Proceedings of Spie - the International Society For Optical Engineering. 7608. DOI: 10.1117/12.840422 |
0.835 |
|
| 2010 |
Razeghi M. High-performance InP-based midinfrared quantum cascade lasers at Northwestern University Optical Engineering. 49: 111103. DOI: 10.1117/1.3497623 |
0.466 |
|
| 2010 |
Razeghi M, Bayram C, Vashaei Z, Cicek E, McClintock R. III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices Photonics. 351-352. DOI: 10.1109/Photonics.2010.5698904 |
0.607 |
|
| 2010 |
Huang EKW, Delaunay PY, Nguyen BM, Pour SA, Razeghi M. Photovoltaic MWIR type-II superlattice focal plane array on GaAs substrate Ieee Journal of Quantum Electronics. 46: 1704-1708. DOI: 10.1109/Jqe.2010.2061218 |
0.731 |
|
| 2010 |
Delaunay P, Razeghi M. Spatial Noise and Correctability of Type-II InAs/GaSb Focal Plane Arrays Ieee Journal of Quantum Electronics. 46: 584-588. DOI: 10.1109/Jqe.2009.2035715 |
0.607 |
|
| 2010 |
Yu JS, Slivken S, Razeghi M. Injector doping level-dependent continuous-wave operation of InP-based QCLs at λ ∼ 7.3 µm above room temperature Semiconductor Science and Technology. 25: 125015. DOI: 10.1088/0268-1242/25/12/125015 |
0.704 |
|
| 2010 |
Bai Y, Bandyopadhyay N, Tsao S, Selcuk E, Slivken S, Razeghi M. Highly temperature insensitive quantum cascade lasers Applied Physics Letters. 97: 251104. DOI: 10.1063/1.3529449 |
0.826 |
|
| 2010 |
Lu QY, Bai Y, Bandyopadhyay N, Slivken S, Razeghi M. Room-temperature continuous wave operation of distributed feedback quantum cascade lasers with watt-level power output Applied Physics Letters. 97: 231119. DOI: 10.1063/1.3525859 |
0.772 |
|
| 2010 |
Bayram C, Vashaei Z, Razeghi M. Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes Applied Physics Letters. 97. DOI: 10.1063/1.3515418 |
0.643 |
|
| 2010 |
Manurkar P, Ramezani-Darvish S, Nguyen B, Razeghi M, Hubbs J. High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices Applied Physics Letters. 97: 193505. DOI: 10.1063/1.3514244 |
0.447 |
|
| 2010 |
Bandyopadhyay N, Bai Y, Gokden B, Myzaferi A, Tsao S, Slivken S, Razeghi M. Watt level performance of quantum cascade lasers in room temperature continuous wave operation at λ∼3.76 μm Applied Physics Letters. 97. DOI: 10.1063/1.3496489 |
0.834 |
|
| 2010 |
Gökden B, Bai Y, Bandyopadhyay N, Slivken S, Razeghi M. Broad area photonic crystal distributed feedback quantum cascade lasers emitting 34 W at λ∼4.36 μm Applied Physics Letters. 97: 131112. DOI: 10.1063/1.3496043 |
0.84 |
|
| 2010 |
Vashaei Z, Bayram C, Lavenus P, Razeghi M. Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices Applied Physics Letters. 97. DOI: 10.1063/1.3493185 |
0.614 |
|
| 2010 |
Bayram C, Vashaei Z, Razeghi M. Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes Applied Physics Letters. 97. DOI: 10.1063/1.3484280 |
0.649 |
|
| 2010 |
Cicek E, Vashaei Z, McClintock R, Bayram C, Razeghi M. Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates Applied Physics Letters. 96. DOI: 10.1063/1.3457783 |
0.75 |
|
| 2010 |
Vashaei Z, Cicek E, Bayram C, McClintock R, Razeghi M. GaN avalanche photodiodes grown on m-plane freestanding GaN substrate Applied Physics Letters. 96. DOI: 10.1063/1.3432408 |
0.711 |
|
| 2010 |
Vashaei Z, Bayram C, Razeghi M. Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature Journal of Applied Physics. 107. DOI: 10.1063/1.3372763 |
0.642 |
|
| 2010 |
Pau JL, Piqueras J, Rogers DJ, Teherani FH, Minder K, McClintock R, Razeghi M. On the interface properties of ZnO/Si electroluminescent diodes Journal of Applied Physics. 107. DOI: 10.1063/1.3305530 |
0.811 |
|
| 2010 |
Bayram C, Vashaei Z, Razeghi M. AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition Applied Physics Letters. 96. DOI: 10.1063/1.3294633 |
0.628 |
|
| 2010 |
Bai Y, Slivken S, Kuboya S, Darvish SR, Razeghi M. Quantum cascade lasers that emit more light than heat Nature Photonics. 4: 99-102. DOI: 10.1038/Nphoton.2009.263 |
0.78 |
|
| 2010 |
Razeghi M, Nguyen BM. Band gap tunability of Type II Antimonide-based superlattices Physics Procedia. 3: 1207-1212. DOI: 10.1016/J.Phpro.2010.01.164 |
0.425 |
|
| 2010 |
Yu JS, Slivken S, Evans A, Razeghi M. Erratum to: High-performance, continuous-wave quantum-cascade lasers operating up to 85°C at λ∼8.8 μm Applied Physics A. 100: 575-575. DOI: 10.1007/S00339-010-5873-Z |
0.751 |
|
| 2009 |
Razeghi M, Mohseni H. Front Matter: Volume 7397 Proceedings of Spie. 739701. DOI: 10.1117/12.844858 |
0.456 |
|
| 2009 |
Razeghi M, Nguyen BM, Delaunay PY, Huang EKW, Abdollahi Pour S, Manukar P, Bogdanov S. State-of-the-art Type II antimonide-based superlattice photodiodes for infrared detection and imaging Proceedings of Spie - the International Society For Optical Engineering. 7467. DOI: 10.1117/12.828421 |
0.802 |
|
| 2009 |
Yu JS, Lee HK, Slivken SB, Razeghi M. Thermal characteristics and analysis of quantum cascade lasers for biochemical sensing applications Proceedings of Spie. 7397: 739705. DOI: 10.1117/12.825594 |
0.646 |
|
| 2009 |
Razeghi M, Bayram C. Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications Proceedings of Spie - the International Society For Optical Engineering. 7366. DOI: 10.1117/12.819390 |
0.566 |
|
| 2009 |
Nguyen BM, Hoffman D, Huang EKW, Delaunay PY, Razeghi M. High performance antimony based type-II superlattice photodiodes on GaAs substrates Proceedings of Spie - the International Society For Optical Engineering. 7298. DOI: 10.1117/12.818373 |
0.71 |
|
| 2009 |
Delaunay P, Nguyen B, Razeghi M. Background limited performance of long-wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice Proceedings of Spie. 7298. DOI: 10.1117/12.818271 |
0.751 |
|
| 2009 |
Razeghi M. High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on InP/GaInAs/InAlAs material system Proceedings of Spie - the International Society For Optical Engineering. 7230. DOI: 10.1117/12.813923 |
0.408 |
|
| 2009 |
Bai Y, Gokden B, Slivken S, Darvish SR, Pour SA, Razeghi M. Mid-infrared quantum cascade lasers with high wall plug efficiency Proceedings of Spie - the International Society For Optical Engineering. 7222. DOI: 10.1117/12.810281 |
0.806 |
|
| 2009 |
Sandana VE, Rogers DJ, Hosseini Teherani F, McClintock R, Bayram C, Razeghi M, Drouhin HJ, Clochard MC, Sallet V, Garry G, Falyouni F. Comparison of ZnO nanostructures grown using pulsed laser deposition, metal organic chemical vapor deposition, and physical vapor transport Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 27: 1678-1683. DOI: 10.1116/1.3137990 |
0.717 |
|
| 2009 |
Rogers DJ, Teherani FH, Moudakir T, Gautier S, Jomard F, Molinari M, Troyon M, McGrouther D, Chapman JN, Razeghi M, Ougazzaden A. Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers Journal of Vacuum Science & Technology B. 27: 1655-1657. DOI: 10.1116/1.3137967 |
0.366 |
|
| 2009 |
Bayram C, Razeghi M, Rogers DJ, Teherani FH. Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 27: 1784-1788. DOI: 10.1116/1.3116590 |
0.63 |
|
| 2009 |
Teherani FH, Razeghi M, Rogers DJ, Bayram C, Mcclintock R. Hybrid green LEDs with n-type ZnO substituted for N-type GaN in an inverted P-N junction Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 401. DOI: 10.1109/LEOS.2009.5343231 |
0.727 |
|
| 2009 |
Razeghi M. High-performance InP-based mid-IR quantum cascade lasers Ieee Journal On Selected Topics in Quantum Electronics. 15: 941-951. DOI: 10.1109/Jstqe.2008.2006764 |
0.482 |
|
| 2009 |
Delaunay PY, Nguyen BM, Hoffman D, Huang EKW, Manurkar P, Bogdanov S, Razeghi M. Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices Proceedings of Spie - the International Society For Optical Engineering. 7222. DOI: 10.1109/Jqe.2008.2002667 |
0.734 |
|
| 2009 |
Razeghi M, Slivken S, Bai Y, Gokden B, Darvish SR. High power quantum cascade lasers New Journal of Physics. 11. DOI: 10.1088/1367-2630/11/12/125017 |
0.836 |
|
| 2009 |
Bai Y, Slivken S, Darvish SR, Haddadi A, Gokden B, Razeghi M. High power broad area quantum cascade lasers Applied Physics Letters. 95. DOI: 10.1063/1.3270043 |
0.84 |
|
| 2009 |
Bayram C, Ṕŕ-Laperne N, Razeghi M. Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition Applied Physics Letters. 95. DOI: 10.1063/1.3267101 |
0.625 |
|
| 2009 |
Nguyen BM, Bogdanov S, Pour SA, Razeghi M. Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection Applied Physics Letters. 95. DOI: 10.1063/1.3258489 |
0.645 |
|
| 2009 |
Pour SA, Nguyen BM, Bogdanov S, Huang EK, Razeghi M. Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate Applied Physics Letters. 95. DOI: 10.1063/1.3254719 |
0.821 |
|
| 2009 |
Ṕŕ-Laperne N, Bayram C, Nguyen-Tĥ L, McClintock R, Razeghi M. Tunability of intersubband absorption from 4.5 to 5.3 μm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition Applied Physics Letters. 95. DOI: 10.1063/1.3242027 |
0.714 |
|
| 2009 |
Delaunay PY, Razeghi M. Noise analysis in type-II InAs/GaSb focal plane arrays Journal of Applied Physics. 106. DOI: 10.1063/1.3224958 |
0.591 |
|
| 2009 |
Yamanaka T, Movaghar B, Tsao S, Kuboya S, Myzaferi A, Razeghi M. Gain-length scaling in quantum dot/quantum well infrared photodetectors Applied Physics Letters. 95: 93502. DOI: 10.1063/1.3222856 |
0.649 |
|
| 2009 |
Bai Y, Gokden B, Darvish SR, Slivken S, Razeghi M. Photonic crystal distributed feedback quantum cascade lasers with 12 W output power Applied Physics Letters. 95. DOI: 10.1063/1.3182567 |
0.835 |
|
| 2009 |
Nguyen BM, Hoffman D, Huang EKW, Bogdanov S, Delaunay PY, Razeghi M, Tidrow MZ. Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate Applied Physics Letters. 94. DOI: 10.1063/1.3148326 |
0.81 |
|
| 2009 |
Bayram C, Ṕŕ-Laperne N, McClintock R, Fain B, Razeghi M. Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions Applied Physics Letters. 94. DOI: 10.1063/1.3104857 |
0.714 |
|
| 2009 |
Huang EKW, Hoffman D, Nguyen BM, Delaunay PY, Razeghi M. Surface leakage reduction in narrow band gap type-II antimonide-based superlattice photodiodes Applied Physics Letters. 94. DOI: 10.1063/1.3078282 |
0.724 |
|
| 2009 |
Razeghi M, McClintock R. A review of III-nitride research at the Center for Quantum Devices Journal of Crystal Growth. 311: 3067-3074. DOI: 10.1016/J.Jcrysgro.2009.01.097 |
0.643 |
|
| 2009 |
Bayram C, Pau JL, McClintock R, Razeghi M. Comprehensive study of blue and green multi-quantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth GaN Applied Physics B: Lasers and Optics. 95: 307-314. DOI: 10.1007/S00340-008-3321-Y |
0.749 |
|
| 2009 |
Bayram C, Razeghi M. Stranski-Krastanov growth of InGaN quantum dots emitting in green spectra Applied Physics a: Materials Science and Processing. 96: 403-408. DOI: 10.1007/S00339-009-5186-2 |
0.646 |
|
| 2009 |
Lee HK, Chung KS, Yu JS, Razeghi M. Thermal analysis of buried heterostructure quantum cascade lasers for long-wavelength infrared emission using 2D anisotropic heat-dissipation model Physica Status Solidi (a). 206: 356-362. DOI: 10.1002/Pssa.200824314 |
0.423 |
|
| 2009 |
Bayram C, Razeghi M. Nitrides push performance of UV photodiodes Laser Focus World. 45: 47-51. |
0.57 |
|
| 2008 |
Razeghi M, Slivken S, Bai Y, Darvish R. The Quantum Cascade Laser: A Versatile and Powerful Tool Optics and Photonics News. 19: 42. DOI: 10.1364/Opn.19.7.000042 |
0.748 |
|
| 2008 |
Razeghi M. Quantum devices based on modern band structure engineering and epitaxial technology Modern Physics Letters B. 22: 2343-2371. DOI: 10.1142/S0217984908016893 |
0.335 |
|
| 2008 |
Razeghi M, Nguyen BM, Hoffman D, Delaunay PY, Huang EKW, Tidrow M, Nathan V. Development of material quality and structural design for high performance Type II InAs/GaSb superlattice photodiodes and focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 7082. DOI: 10.1117/12.794218 |
0.755 |
|
| 2008 |
Nguyen BM, Hoffman D, Delaunay PY, Huang EKW, Razeghi M. Very high performance LWIR and VLWIR Type-II InAs/GaSb superlattice photodiodes with M-structure barrier Proceedings of Spie - the International Society For Optical Engineering. 7082. DOI: 10.1117/12.794210 |
0.728 |
|
| 2008 |
Delaunay PY, Razeghi M. High performance focal plane array based on type-II InAs/GaSb superlattice heterostructures Proceedings of Spie - the International Society For Optical Engineering. 6900. DOI: 10.1117/12.776257 |
0.647 |
|
| 2008 |
Tsao S, Lim H, Seo H, Zhang W, Razeghi M. InP-Based Quantum-Dot Infrared Photodetectors With High Quantum Efficiency and High-Temperature Imaging Ieee Sensors Journal. 8: 936-941. DOI: 10.1109/Jsen.2008.923940 |
0.745 |
|
| 2008 |
Yu JS, Slivken S, Evans AJ, Razeghi M. High-Performance Continuous-Wave Operation of $\lambda \sim {\hbox {4.6}}~\mu{\hbox {m}}$ Quantum-Cascade Lasers Above Room Temperature Ieee Journal of Quantum Electronics. 44: 747-754. DOI: 10.1109/Jqe.2008.924434 |
0.784 |
|
| 2008 |
Delaunay PY, Nguyen BM, Hoffman D, Razeghi M. High-performance focal plane array based on InAs-GaSb superlattices with a 10-μm cutoff wavelength Ieee Journal of Quantum Electronics. 44: 462-467. DOI: 10.1109/Jqe.2008.916701 |
0.734 |
|
| 2008 |
Pau JL, McClintock R, Bayram C, Minder K, Silversmith D, Razeghi M. High optical response in forward biased (In,Ga)N-GaN multiquantum-well diodes under barrier illumination Ieee Journal of Quantum Electronics. 44: 346-353. DOI: 10.1109/Jqe.2007.914766 |
0.808 |
|
| 2008 |
Movaghar B, Tsao S, Abdollahi Pour S, Yamanaka T, Razeghi M. Gain and recombination dynamics in photodetectors made with quantum nanostructures: The quantum dot in a well and the quantum well Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.115320 |
0.813 |
|
| 2008 |
Pau JL, Bayram C, Giedraitis P, McClintock R, Razeghi M. GaN nanostructured p-i-n photodiodes Applied Physics Letters. 93. DOI: 10.1063/1.3041641 |
0.749 |
|
| 2008 |
Bayram C, Pau JL, McClintock R, Razeghi M, Ulmer MP, Silversmith D. High quantum efficiency back-illuminated GaN avalanche photodiodes Applied Physics Letters. 93. DOI: 10.1063/1.3039061 |
0.75 |
|
| 2008 |
Nguyen BM, Hoffman D, Delaunay PY, Huang EKW, Razeghi M, Pellegrino J. Band edge tunability of M -structure for heterojunction design in Sb based type II superlattice photodiodes Applied Physics Letters. 93. DOI: 10.1063/1.3005196 |
0.68 |
|
| 2008 |
Bayram C, Pau JL, McClintock R, Razeghi M. Delta-doping optimization for high quality p -type GaN Journal of Applied Physics. 104. DOI: 10.1063/1.3000564 |
0.711 |
|
| 2008 |
Nguyen BM, Hoffman D, Huang EKW, Delaunay PY, Razeghi M. Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K Applied Physics Letters. 93. DOI: 10.1063/1.2978330 |
0.755 |
|
| 2008 |
Bayram C, Teherani FH, Rogers DJ, Razeghi M. A hybrid green light-emitting diode comprised of n-ZnO/ (InGaN/GaN) multi-quantum-wells/ p-GaN Applied Physics Letters. 93. DOI: 10.1063/1.2975165 |
0.669 |
|
| 2008 |
Hoffman D, Nguyen BM, Huang EKW, Delaunay PY, Razeghi M, Tidrow MZ, Pellegrino J. The effect of doping the M -barrier in very long-wave type-II InAsGaSb heterodiodes Applied Physics Letters. 93. DOI: 10.1063/1.2963980 |
0.735 |
|
| 2008 |
Bai Y, Slivken S, Darvish SR, Razeghi M. Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency Applied Physics Letters. 93: 021103. DOI: 10.1063/1.2957673 |
0.783 |
|
| 2008 |
Bayram C, Pau JL, McClintock R, Razeghi M. Performance enhancement of GaN ultraviolet avalanche photodiodes with p -type δ -doping Applied Physics Letters. 92. DOI: 10.1063/1.2948857 |
0.719 |
|
| 2008 |
Delaunay PY, Nguyen BM, Hoffman D, Hood A, Huang EKW, Razeghi M, Tidrow MZ. High quantum efficiency two color type-II InAsGaSb n-i-p-p-i-n photodiodes Applied Physics Letters. 92. DOI: 10.1063/1.2898528 |
0.816 |
|
| 2008 |
Pau JL, Bayram C, McClintock R, Razeghi M, Silversmith D. Back-illuminated separate absorption and multiplication GaN avalanche photodiodes Applied Physics Letters. 92. DOI: 10.1063/1.2897039 |
0.723 |
|
| 2008 |
Bai Y, Darvish SR, Slivken S, Zhang W, Evans A, Nguyen J, Razeghi M. Room temperature continuous wave operation of quantum cascade lasers with watt-level optical power Applied Physics Letters. 92: 101105. DOI: 10.1063/1.2894569 |
0.821 |
|
| 2008 |
Razeghi M, Bai Y, Slivken S, Zhang W. Electrically pumped photonic crystal distributed feedback quantum cascade lasers Materials Research Society Symposium Proceedings. 1076: 81-90. DOI: 10.1063/1.2798062 |
0.773 |
|
| 2008 |
Jang J, Kim C, Ryu H, Razeghi M, Jung W. ZnO 3D flower-like nanostructure synthesized on GaN epitaxial layer by simple route hydrothermal process Journal of Alloys and Compounds. 463: 503-510. DOI: 10.1016/J.Jallcom.2007.09.077 |
0.319 |
|
| 2008 |
Yu JS, Slivken S, Evans A, Razeghi M. High-performance, continuous-wave quantum-cascade lasers operating up to 85°C at λ∼8.8 μm Applied Physics A. 93: 405-408. DOI: 10.1007/S00339-008-4783-9 |
0.783 |
|
| 2008 |
Rogers DJ, Look DC, Téhérani FH, Minder K, Razeghi M, Largeteau A, Demazeau G, Morrod J, Prior KA, Lusson A, Hassani S. Investigations of ZnO thin films grown on c-Al2O3 by pulsed laser deposition in N2 + O2 ambient Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 3084-3087. DOI: 10.1002/Pssc.200779315 |
0.807 |
|
| 2007 |
Ulmer MP, McClintock RM, Pau JL, Razeghi M. Advances in APDs for UV astronomy Proceedings of Spie - the International Society For Optical Engineering. 6686. DOI: 10.1117/12.739919 |
0.596 |
|
| 2007 |
Nathan V, Razeghi M. Type II superlattice infrared detectors and focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 6542. DOI: 10.1117/12.723730 |
0.328 |
|
| 2007 |
Tsao S, Lim H, Zhang W, Razeghi M. High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature and high operating temperature focal plane array Proceedings of Spie. 6593. DOI: 10.1117/12.719691 |
0.743 |
|
| 2007 |
Razeghi M, Evans A, Nguyen J, Bai Y, Slivken SB, Darvish SR, Mi K. High-power mid- and far- wavelength infrared lasers for free space communication Proceedings of Spie. 6593. DOI: 10.1117/12.718784 |
0.788 |
|
| 2007 |
Nguyen J, Razeghi M. Techniques for high-quality SiO2 films Proceedings of Spie - the International Society For Optical Engineering. 6479. DOI: 10.1117/12.716608 |
0.546 |
|
| 2007 |
Delaunay PY, Nguyen BM, Hofman D, Razeghi M. Substrate removal for high quantum efficiency back side illuminated type-II InAsGaSb photodetectors Applied Physics Letters. 91. DOI: 10.1063/1.2821834 |
0.669 |
|
| 2007 |
Nguyen BM, Hoffman D, Delaunay PY, Razeghi M. Dark current suppression in type II InAsGaSb superlattice long wavelength infrared photodiodes with M-structure barrier Applied Physics Letters. 91. DOI: 10.1063/1.2800808 |
0.723 |
|
| 2007 |
Hoffman D, Nguyen BM, Delaunay PY, Hood A, Razeghi M, Pellegrino J. Beryllium compensation doping of InAsGaSb infrared superlattice photodiodes Applied Physics Letters. 91. DOI: 10.1063/1.2795086 |
0.815 |
|
| 2007 |
Delaunay PY, Hood A, Nguyen BM, Hoffman D, Wei Y, Razeghi M. Passivation of type-II InAsGaSb double heterostructure Applied Physics Letters. 91. DOI: 10.1063/1.2776353 |
0.81 |
|
| 2007 |
Minder K, Pau JL, McClintock R, Kung P, Bayram C, Razeghi M, Silversmith D. Scaling in back-illuminated GaN avalanche photodiodes Applied Physics Letters. 91. DOI: 10.1063/1.2772199 |
0.802 |
|
| 2007 |
Evans A, Darvish SR, Slivken S, Nguyen J, Bai Y, Razeghi M. Buried heterostructure quantum cascade lasers with high continuous-wave wall plug efficiency Applied Physics Letters. 91: 071101. DOI: 10.1063/1.2770768 |
0.813 |
|
| 2007 |
Rogers DJ, Teherani FH, Ougazzaden A, Gautier S, Divay L, Lusson A, Durand O, Wyczisk F, Garry G, Monteiro T, Correira MR, Peres M, Neves A, McGrouther D, Chapman JN, ... Razeghi M, et al. Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN Applied Physics Letters. 91: 71120-71120. DOI: 10.1063/1.2770655 |
0.364 |
|
| 2007 |
Pau JL, McClintock R, Minder K, Bayram C, Kung P, Razeghi M, Muñoz E, Silversmith D. Geiger-mode operation of back-illuminated GaN avalanche photodiodes Applied Physics Letters. 91. DOI: 10.1063/1.2759980 |
0.812 |
|
| 2007 |
Hood A, Delaunay PY, Hoffman D, Nguyen BM, Wei Y, Razeghi M, Nathan V. Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation Applied Physics Letters. 90. DOI: 10.1063/1.2747172 |
0.813 |
|
| 2007 |
Nguyen BM, Hoffman D, Wei Y, Delaunay PY, Hood A, Razeghi M. Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm Applied Physics Letters. 90. DOI: 10.1063/1.2746943 |
0.838 |
|
| 2007 |
Tsao S, Lim H, Zhang W, Razeghi M. High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector Applied Physics Letters. 90: 201109. DOI: 10.1063/1.2740111 |
0.741 |
|
| 2007 |
Slivken S, Evans A, Zhang W, Razeghi M. High-power, continuous-operation intersubband laser for wavelengths greater than 10μm Applied Physics Letters. 90: 151115. DOI: 10.1063/1.2722190 |
0.755 |
|
| 2007 |
McClintock R, Pau JL, Minder K, Bayram C, Kung P, Razeghi M. Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes Applied Physics Letters. 90. DOI: 10.1063/1.2720712 |
0.793 |
|
| 2007 |
Lim H, Tsao S, Zhang W, Razeghi M. High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature Applied Physics Letters. 90: 131112. DOI: 10.1063/1.2719160 |
0.738 |
|
| 2007 |
Rogers D, Teherani F, Kung P, Minder K, Razeghi M. Materials characterization of n - ZnO / p - GaN : Mg / c - Al2O3 UV LEDs grown by pulsed laser deposition and metal–organic chemical vapor deposition Superlattices and Microstructures. 42: 322-326. DOI: 10.1016/J.Spmi.2007.04.075 |
0.809 |
|
| 2007 |
Evans AJ, Razeghi M. Quantum cascade laser: A tool for trace chemical detection American Filtration and Separations Society - 20th Annual Conference and Exposition of the American Filtration and Separations Society 2007. 2: 914-923. |
0.567 |
|
| 2006 |
Tsekoun A, Go R, Pushkarsky M, Razeghi M, Patel CK. Improved performance of quantum cascade lasers through a scalable, manufacturable epitaxial-side-down mounting process. Proceedings of the National Academy of Sciences of the United States of America. 103: 4831-5. PMID 16547130 DOI: 10.1073/Pnas.0600859103 |
0.434 |
|
| 2006 |
Lim H, Tsao S, Taguchi M, Zhang W, Quivy AA, Razeghi M. Quantum Dots in GaInP/GaInAs/GaAs for Infrared Sensing Advances in Science and Technology. 51: 201-208. DOI: 10.4028/Www.Scientific.Net/Ast.51.201 |
0.74 |
|
| 2006 |
Razeghi M. High-power semiconductor lasers make mid-infrared wavelengths accessible Spie Newsroom. DOI: 10.1117/2.1200601.0059 |
0.397 |
|
| 2006 |
Razeghi M, Lim HC, Tsao S, Taguchi M, Zhang W, Quivy AA. High performance mid-wavelength quantum dot infrared photodetectrors for focal plane arrays Proceedings of Spie. 6297. DOI: 10.1117/12.682091 |
0.727 |
|
| 2006 |
Hoffman D, Hood A, Michel E, Fuchs F, Razeghi M. Electroluminescence of InAs–GaSb Heterodiodes Ieee Journal of Quantum Electronics. 42: 126-130. DOI: 10.1109/Jqe.2005.861621 |
0.797 |
|
| 2006 |
Lim H, Movaghar B, Tsao S, Taguchi M, Zhang W, Quivy AA, Razeghi M. Gain and recombination dynamics of quantum-dot infrared photodetectors Physical Review B. 74. DOI: 10.1103/Physrevb.74.205321 |
0.682 |
|
| 2006 |
Darvish SR, Zhang W, Evans A, Yu JS, Slivken S, Razeghi M. High-power, continuous-wave operation of distributed-feedback quantum-cascade lasers at λ∼7.8μm Applied Physics Letters. 89: 251119. DOI: 10.1063/1.2408639 |
0.758 |
|
| 2006 |
Da Silva ECF, Hoffman D, Hood A, Nguyen BM, Delaunay PY, Razeghi M. Influence of residual impurity background on the nonradiative recombination processes in high purity InAsGaSb superlattice photodiodes Applied Physics Letters. 89. DOI: 10.1063/1.2405877 |
0.823 |
|
| 2006 |
Nguyen J, Yu JS, Evans A, Slivken S, Razeghi M. Optical coatings by ion-beam sputtering deposition for long-wave infrared quantum cascade lasers Applied Physics Letters. 89: 111113. DOI: 10.1063/1.2353815 |
0.738 |
|
| 2006 |
Hood A, Hoffman D, Nguyen BM, Delaunay PY, Michel E, Razeghi M. High differential resistance type-II InAs/GaSb superlattice photodiodes for the long-wavelength infrared Applied Physics Letters. 89. DOI: 10.1063/1.2345020 |
0.833 |
|
| 2006 |
Evans A, Razeghi M. Reliability of strain-balanced Ga 0.331in 0.669As/ Al 0.659in 0.341As/InP quantum-cascade lasers under continuous-wave room-temperature operation Applied Physics Letters. 88. DOI: 10.1063/1.2217144 |
0.585 |
|
| 2006 |
Yu JS, Evans A, Slivken S, Darvish SR, Razeghi M. Temperature dependent characteristics of λ∼3.8μm room-temperature continuous-wave quantum-cascade lasers Applied Physics Letters. 88: 251118. DOI: 10.1063/1.2216024 |
0.78 |
|
| 2006 |
Darvish SR, Slivken S, Evans A, Yu JS, Razeghi M. Room-temperature, high-power, and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ∼9.6μm Applied Physics Letters. 88: 201114. DOI: 10.1063/1.2205730 |
0.767 |
|
| 2006 |
Rogers DJ, Teherani FH, Yasan A, Minder K, Kung P, Razeghi M. Electroluminescence at 375 nm from a ZnOGaN:Mgc-Al 2O 3 heterojunction light emitting diode Applied Physics Letters. 88. DOI: 10.1063/1.2195009 |
0.822 |
|
| 2006 |
Szafraniec J, Tsao S, Zhang W, Lim H, Taguchi M, Quivy AA, Movaghar B, Razeghi M. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition Applied Physics Letters. 88: 121102. DOI: 10.1063/1.2188056 |
0.739 |
|
| 2006 |
Yu JS, Slivken S, Evans A, Darvish SR, Nguyen J, Razeghi M. High-power λ∼9.5μm quantum-cascade lasers operating above room temperature in continuous-wave mode Applied Physics Letters. 88: 091113. DOI: 10.1063/1.2180873 |
0.778 |
|
| 2006 |
Hood A, Hoffman D, Wei Y, Fuchs F, Razeghi M. Capacitance-voltage investigation of high-purity InAs∕GaSb superlattice photodiodes Applied Physics Letters. 88: 52112. DOI: 10.1063/1.2172399 |
0.815 |
|
| 2006 |
Evans A, Nguyen J, Slivken S, Yu JS, Darvish SR, Razeghi M. Quantum-cascade lasers operating in continuous-wave mode above 90°C at λ∼5.25μm Applied Physics Letters. 88: 051105. DOI: 10.1063/1.2171476 |
0.768 |
|
| 2006 |
Hoffman D, Hood A, Fuchs F, Razeghi M. Nonequilibrium radiation of long-wavelength InAs∕GaSb superlattice photodiodes Journal of Applied Physics. 99: 43503. DOI: 10.1063/1.2170947 |
0.82 |
|
| 2006 |
Yu JS, Darvish SR, Evans A, Nguyen J, Slivken S, Razeghi M. Room-temperature continuous-wave operation of quantum-cascade lasers at λ∼4μm Applied Physics Letters. 88: 041111. DOI: 10.1063/1.2167394 |
0.769 |
|
| 2006 |
Wei Y, Gin A, Razeghi M. Quantum photovoltaic devices based on antimony compound semiconductors Springer Series in Optical Sciences. 118: 515-545. DOI: 10.1007/1-84628-209-8_16 |
0.323 |
|
| 2006 |
Rogers DJ, Teherani FH, Monteiro T, Soares M, Neves A, Carmo M, Pereira S, Correia MR, Lusson A, Alves E, Barradas NP, Morrod JK, Prior KA, Kung P, Yasan A, ... Razeghi M, et al. Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition Physica Status Solidi C: Conferences. 3: 1038-1041. DOI: 10.1002/Pssc.200564756 |
0.784 |
|
| 2006 |
Fuchs F, Hoffmann D, Gin A, Hood A, Wei Y, Razeghi M. Negative luminescence of InAs/GaSb superlattice photodiodes Physica Status Solidi (C). 3: 444-447. DOI: 10.1002/Pssc.200564175 |
0.82 |
|
| 2005 |
Razeghi M, Lim H, Tsao S, Szafraniec J, Zhang W, Mi K, Movaghar B. Transport and photodetection in self-assembled semiconductor quantum dots. Nanotechnology. 16: 219-29. PMID 21727426 DOI: 10.1088/0957-4484/16/2/007 |
0.678 |
|
| 2005 |
Razeghi M, Evans A, Slivken S, Yu JS, Zheng JG, Dravid VP. High-power continuous-wave mid-infrared quantum cascade lasers based on strain-balanced heterostructures Proceedings of Spie. 5840: 54-63. DOI: 10.1117/12.607576 |
0.737 |
|
| 2005 |
Razeghi M, Zhang W, Lim HC, Tsao S, Szafraniec J, Taguchi M, Movaghar B. Focal plane arrays based on quantum dot infrared photodetectors Proceedings of Spie. 5838: 125-136. DOI: 10.1117/12.607534 |
0.706 |
|
| 2005 |
Razeghi M. Deep ultraviolet light-emitting diodes and photodetectors for UV communications Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5729: 30-40. DOI: 10.1117/12.590880 |
0.328 |
|
| 2005 |
Yu J, Evans A, Slivken S, Darvish S, Razeghi M. Short wavelength (/spl lambda//spl sim/4.3 /spl mu/m) high-performance continuous-wave quantum-cascade lasers Ieee Photonics Technology Letters. 17: 1154-1156. DOI: 10.1109/Lpt.2005.846568 |
0.758 |
|
| 2005 |
Hoffman D, Gin A, Wei Y, Hood A, Fuchs F, Razeghi M. Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes Ieee Journal of Quantum Electronics. 41: 1474-1479. DOI: 10.1109/Jqe.2005.858783 |
0.822 |
|
| 2005 |
Bewley WW, Lindle JR, Kim CS, Vurgaftman I, Meyer JR, Evans AJ, Yu JS, Slivken S, Razeghi M. Beam steering in high-power CW quantum-cascade lasers Ieee Journal of Quantum Electronics. 41: 833-841. DOI: 10.1109/Jqe.2005.846691 |
0.774 |
|
| 2005 |
Razeghi M, Evans A, Slivken S, Yu JS, Darvish S, Gokden B, Nguyen J. Recent advances in 3-5 microns InGaAs/InAlAs/InP quantum cascade lasers Conference On Lasers and Electro-Optics Europe - Technical Digest. DOI: 10.1109/CLEOE.2005.1567879 |
0.768 |
|
| 2005 |
Lim H, Zhang W, Tsao S, Sills T, Szafraniec J, Mi K, Movaghar B, Razeghi M. Quantum dot infrared photodetectors: Comparison of experiment and theory Physical Review B. 72. DOI: 10.1103/Physrevb.72.085332 |
0.72 |
|
| 2005 |
Gin A, Movaghar B, Razeghi M, Brown GJ. Infrared detection from GaInAs/InP nanopillar arrays Nanotechnology. 16: 1814-1820. DOI: 10.1088/0957-4484/16/9/067 |
0.785 |
|
| 2005 |
McClintock R, Yasan A, Minder K, Kung P, Razeghi M. Avalanche multiplication in AlGaN based solar-blind photodetectors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2140610 |
0.798 |
|
| 2005 |
Hoffman D, Hood A, Wei Y, Gin A, Fuchs F, Razeghi M. Negative luminescence of long-wavelength InAs∕GaSb superlattice photodiodes Applied Physics Letters. 87: 201103. DOI: 10.1063/1.2130536 |
0.832 |
|
| 2005 |
Bewley WW, Vurgaftman I, Kim CS, Meyer JR, Nguyen J, Evans A, Yu JS, Darvish SR, Slivken S, Razeghi M. Characterization and analysis of single-mode high-power continuous-wave quantum-cascade laser Journal of Applied Physics. 98: 084508. DOI: 10.1063/1.2112170 |
0.775 |
|
| 2005 |
Hood A, Razeghi M, Aifer EH, Brown GJ. On the performance and surface passivation of type II InAs∕GaSb superlattice photodiodes for the very-long-wavelength infrared Applied Physics Letters. 87: 151113. DOI: 10.1063/1.2089170 |
0.751 |
|
| 2005 |
Yu JS, Slivken S, Darvish SR, Evans A, Gokden B, Razeghi M. High-power, room-temperature, and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ∼4.8 μm Applied Physics Letters. 87. DOI: 10.1063/1.2000343 |
0.844 |
|
| 2005 |
Wei Y, Hood A, Yau H, Gin A, Razeghi M, Tidrow MZ, Nathan V. Uncooled operation of type-II InAs∕GaSb superlattice photodiodes in the midwavelength infrared range Applied Physics Letters. 86: 233106. DOI: 10.1063/1.1947908 |
0.84 |
|
| 2005 |
Zhang W, Lim H, Taguchi M, Tsao S, Movaghar B, Razeghi M. High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition Applied Physics Letters. 86: 191103. DOI: 10.1063/1.1923176 |
0.732 |
|
| 2005 |
Wei Y, Hood A, Yau H, Yazdanpanah V, Razeghi M, Tidrow MZ, Nathan V. High-performance type-II InAs/GaSb superlattice photodiodes with cutoff wavelength around 7 μm Applied Physics Letters. 86: 91109. DOI: 10.1063/1.1879113 |
0.817 |
|
| 2005 |
McClintock R, Mayes K, Yasan A, Shiell D, Kung P, Razeghi M. 320×256 solar-blind focal plane arrays based on AlxGa1-xN Applied Physics Letters. 86: 011117-1-011117-3. DOI: 10.1063/1.1846936 |
0.8 |
|
| 2005 |
Jiang J, Tsao S, Mi K, Razeghi M, Brown GJ, Jelen C, Tidrow MZ. Advanced monolithic quantum well infrared photodetector focal plane array integrated with silicon readout integrated circuit Infrared Physics & Technology. 46: 199-207. DOI: 10.1016/J.Infrared.2004.02.002 |
0.698 |
|
| 2005 |
McClintock R, Razeghi M. III-nitride UV Photoconductors Optoelectronic Devices: Iii Nitrides. 251-284. DOI: 10.1016/B978-008044426-0/50010-9 |
0.517 |
|
| 2005 |
Yasan A, Razeghi M. III-nitride Ultraviolet Light Emitting Sources Optoelectronic Devices: Iii Nitrides. 213-249. DOI: 10.1016/B978-008044426-0/50009-2 |
0.726 |
|
| 2004 |
Slivken S, Yu J, Evans A, David J, Doris L, Razeghi M. Ridge-Width Dependence on High-Temperature Continuous-Wave Quantum-Cascade Laser Operation Ieee Photonics Technology Letters. 16: 744-746. DOI: 10.1109/Lpt.2004.823746 |
0.776 |
|
| 2004 |
Yu J, Evans A, David J, Doris L, Slivken S, Razeghi M. High-Power Continuous-Wave Operation of Quantum-Cascade Lasers up to 60<tex>$^circ$</tex>C Ieee Photonics Technology Letters. 16: 747-749. DOI: 10.1109/Lpt.2004.823686 |
0.775 |
|
| 2004 |
Wei Y, Razeghi M. Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering Physical Review B - Condensed Matter and Materials Physics. 69: 853161-853167. DOI: 10.1103/Physrevb.69.085316 |
0.545 |
|
| 2004 |
Evans A, Yu JS, Slivken S, Razeghi M. Continuous-wave operation of λ∼4.8μm quantum-cascade lasersat room temperature Applied Physics Letters. 85: 2166-2168. DOI: 10.1063/1.1793340 |
0.771 |
|
| 2004 |
Jiang J, Tsao S, O'Sullivan T, Zhang W, Lim H, Sills T, Mi K, Razeghi M, Brown GJ, Tidrow MZ. High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition Applied Physics Letters. 84: 2166-2168. DOI: 10.1063/1.1688982 |
0.768 |
|
| 2004 |
Jiang J, Mi K, Tsao S, Zhang W, Lim H, O'Sullivan T, Sills T, Razeghi M, Brown GJ, Tidrow MZ. Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors Applied Physics Letters. 84: 2232-2234. DOI: 10.1063/1.1688000 |
0.763 |
|
| 2004 |
Gin A, Wei Y, Hood A, Bajowala A, Yazdanpanah V, Razeghi M, Tidrow M. Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes Applied Physics Letters. 84: 2037-2039. DOI: 10.1063/1.1686894 |
0.821 |
|
| 2004 |
McClintock R, Yasan A, Mayes K, Shiell D, Darvish SR, Kung P, Razeghi M. High quantum efficiency AlGaN solar-blind p-i-n photodiodes Applied Physics Letters. 84: 1248-1250. DOI: 10.1063/1.1650550 |
0.82 |
|
| 2004 |
Mayes K, Yasan A, McClintock R, Shiell D, Darvish SR, Kung P, Razeghi M. High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well Applied Physics Letters. 84: 1046-1048. DOI: 10.1063/1.1647273 |
0.842 |
|
| 2004 |
Evans A, Yu JS, David J, Doris L, Mi K, Slivken S, Razeghi M. High-temperature, high-power, continuous-wave operation of buried heterostructure quantum-cascade lasers Applied Physics Letters. 84: 314-316. DOI: 10.1063/1.1641174 |
0.782 |
|
| 2004 |
Jiang J, Tsao S, O’Sullivan T, Razeghi M, Brown GJ. Fabrication of indium bumps for hybrid infrared focal plane array applications Infrared Physics & Technology. 45: 143-151. DOI: 10.1016/J.Infrared.2003.08.002 |
0.655 |
|
| 2004 |
Razeghi M, Yasan A, McClintock R, Mayes K, Shiell D, Darvish SR, Kung P. Review of III-nitride optoelectronic materials for light emission and detection Physica Status Solidi (C). 1: S141-S148. DOI: 10.1002/Pssc.200405133 |
0.849 |
|
| 2003 |
Razeghi M, Slivken S, Yu JS, Evans A, David J. High Performance Quantum Cascade Lasers at the Center for Quantum Devices Frontiers in Optics. DOI: 10.1364/Fio.2003.Thx2 |
0.754 |
|
| 2003 |
Razeghi M, Yasan A, McClintock R, Mayes K, Darvish SR, Kung P. High power deep UV AlGaN light-emitting diodes Frontiers in Optics. DOI: 10.1364/Fio.2003.Pdp9 |
0.797 |
|
| 2003 |
Slivken S, Razeghi M. Very High Average Power Quantum Cascade Lasers by GasMBE Proceedings of Spie - the International Society For Optical Engineering. 4999: 59-69. DOI: 10.1117/12.507398 |
0.323 |
|
| 2003 |
Jiang J, Mi K, McClintock R, Razeghi M, Brown GJ, Jelen C. Demonstration of 256 × 256 focal plane array based on Al-free GaInAs-InP QWIP Ieee Photonics Technology Letters. 15: 1273-1275. DOI: 10.1109/Lpt.2003.816667 |
0.694 |
|
| 2003 |
Yu JS, Evans A, David J, Doris L, Slivken S, Razeghi M. Cavity-length effects of high-temperature high-power continuous-wave characteristics in quantum-cascade lasers Applied Physics Letters. 83: 5136-5138. DOI: 10.1063/1.1634689 |
0.77 |
|
| 2003 |
Yasan A, McClintock R, Mayes K, Kim DH, Kung P, Razeghi M. Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes Applied Physics Letters. 83: 4083-4085. DOI: 10.1063/1.1626808 |
0.808 |
|
| 2003 |
Yu JS, Slivken S, Evans A, Doris L, Razeghi M. High-power continuous-wave operation of a 6 μm quantum-cascade laser at room temperature Applied Physics Letters. 83: 2503-2505. DOI: 10.1063/1.1613354 |
0.781 |
|
| 2003 |
Wei Y, Bae J, Gin A, Hood A, Razeghi M, Brown GJ, Tidrow M. High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering Journal of Applied Physics. 94: 4720-4722. DOI: 10.1063/1.1606506 |
0.827 |
|
| 2003 |
Yu JS, Slivken S, Evans A, David J, Razeghi M. Very high average power at room temperature from λ≈5.9-μm quantum-cascade lasers Applied Physics Letters. 82: 3397-3399. DOI: 10.1063/1.1574404 |
0.774 |
|
| 2003 |
Razeghi M. Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices Epj Applied Physics. 23: 149-205. DOI: 10.1051/Epjap:2003056 |
0.486 |
|
| 2003 |
Yasan A, Razeghi M. Very high quality p-type AlxGa1-xN/GaN superlattice Solid-State Electronics. 47: 303-306. DOI: 10.1016/S0038-1101(02)00211-3 |
0.716 |
|
| 2003 |
Razeghi M, Gin A, Wei Y, Bae J, Nah J. Quantum sensing using Type II InAs/GaSb superlattice for infrared detection Microelectronics Journal. 34: 405-410. DOI: 10.1016/S0026-2692(03)00035-1 |
0.803 |
|
| 2003 |
Razeghi M, Slivken S, Yu J, Evans A, David J. High performance quantum cascade lasers at λ∼6μm Microelectronics Journal. 34: 383-385. DOI: 10.1016/S0026-2692(03)00030-2 |
0.775 |
|
| 2003 |
Gin A, Wei Y, Bae J, Hood A, Nah J, Razeghi M. Passivation of type II InAs/GaSb superlattice photodiodes Thin Solid Films. 447: 489-492. DOI: 10.1016/J.Tsf.2003.09.002 |
0.815 |
|
| 2003 |
Razeghi M, Slivken S. High performance quantum cascade laser results at the Centre for Quantum Devices Physica Status Solidi (a) Applied Research. 195: 144-150. DOI: 10.1002/Pssa.200306221 |
0.681 |
|
| 2003 |
Razeghi M, Slivken S. High power quantum cascade lasers grown by GasMBE Opto-Electronics Review. 11: 85-91. |
0.39 |
|
| 2003 |
Razeghi M, Slivken S. High power quantum cascade lasers operating at room temperature Journal of the Korean Physical Society. 42. |
0.312 |
|
| 2002 |
Razeghi M, Slivken S. High power quantum cascade lasers (QCLs) grown by GasMBE Proceedings of Spie - the International Society For Optical Engineering. 5136: 317-324. DOI: 10.1117/12.519745 |
0.713 |
|
| 2002 |
Jiang J, Jelen C, Razeghi M, Brown GJ. High detectivity GaInAs-InP quantum-well infrared photodetectors grown on Si substrates Ieee Photonics Technology Letters. 14: 372-374. DOI: 10.1109/68.986817 |
0.547 |
|
| 2002 |
Slivken S, Evans A, David J, Razeghi M. High-average-power, high-duty-cycle (λ∼6 μm) quantum cascade lasers Applied Physics Letters. 81: 4321-4323. DOI: 10.1063/1.1526462 |
0.77 |
|
| 2002 |
Wei Y, Gin A, Razeghi M, Brown GJ. Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm Applied Physics Letters. 81: 3675-3677. DOI: 10.1063/1.1520699 |
0.815 |
|
| 2002 |
Yasan A, McClintock R, Mayes K, Darvish SR, Zhang H, Kung P, Razeghi M, Lee SK, Han JY. Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire Applied Physics Letters. 81: 2151-2153. DOI: 10.1063/1.1508414 |
0.828 |
|
| 2002 |
Yasan A, McClintock R, Mayes K, Darvish SR, Kung P, Razeghi M. Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm Applied Physics Letters. 81: 801-802. DOI: 10.1063/1.1497709 |
0.812 |
|
| 2002 |
Slivken S, Huang Z, Evans A, Razeghi M. High-power (λ∼9μm) quantum cascade lasers Applied Physics Letters. 80: 4091-4093. DOI: 10.1063/1.1482782 |
0.77 |
|
| 2002 |
Wei Y, Gin A, Razeghi M, Brown GJ. Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications Applied Physics Letters. 80: 3262-3264. DOI: 10.1063/1.1476395 |
0.818 |
|
| 2002 |
Yasan A, McClintock R, Darvish SR, Lin Z, Mi K, Kung P, Razeghi M. Characteristics of high-quality p-type AlxGa1-xN/GaN superlattices Applied Physics Letters. 80: 2108-2110. DOI: 10.1063/1.1463708 |
0.804 |
|
| 2002 |
Wang YG, Zhang Z, Dravid VP, Kung P, Razeghi M. Morphological characterization of selectively overgrown GaN via lateral epitaxy Journal of Materials Science. 37: 1951-1957. DOI: 10.1023/A:1015282711452 |
0.553 |
|
| 2002 |
Slivken S, Razeghi M. Development of quantum cascade lasers for high peak output power and low threshold current density Solid-State Electronics. 46: 1531-1534. DOI: 10.1016/S0038-1101(02)00100-4 |
0.351 |
|
| 2001 |
Razeghi M, Wei Y, Gin A, Brown GJ. Quantum dots of InAs/GaSb type II superlattice for infrared sensing Mrs Proceedings. 692. DOI: 10.1557/Proc-692-H3.1.1 |
0.832 |
|
| 2001 |
Razeghi M, Erdtmann M, Jelen C, Diaz J, Guastavino F, Park Y. Long-Wavelength Quantum Well Infrared Photodetectors Defence Science Journal. 51: 35-52. DOI: 10.14429/Dsj.51.2204 |
0.806 |
|
| 2001 |
McClintock R, Sandvik P, Mi K, Shahedipour F, Yasan A, Jelen C, Kung P, Razeghi M. AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications Proceedings of Spie - the International Society For Optical Engineering. 4288: 219-229. DOI: 10.1117/12.429409 |
0.781 |
|
| 2001 |
Mohseni H, Wei Y, Razeghi M. High performance type-II InAs/GaSb superlattice photodiodes Proceedings of Spie - the International Society For Optical Engineering. 4288: 191-199. DOI: 10.1117/12.429406 |
0.601 |
|
| 2001 |
Razeghi M, Mohseni H. Miniaturization: Enabling technology for the new millenium Proceedings of Spie - the International Society For Optical Engineering. 4413: 1-10. DOI: 10.1117/12.425401 |
0.555 |
|
| 2001 |
Mohseni H, Razeghi M. Long-wavelength type-II photodiodes operating at room temperature Ieee Photonics Technology Letters. 13: 517-519. DOI: 10.1109/68.920771 |
0.608 |
|
| 2001 |
Mohseni H, Razeghi M, Brown GJ, Park YS. High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range Applied Physics Letters. 78: 2107-2109. DOI: 10.1063/1.1362179 |
0.664 |
|
| 2001 |
Tahraoui A, Matlis A, Slivken S, Diaz J, Razeghi M. High-performance quantum cascade lasers (λ∼11 μm) operating at high temperature (T ⩾425 K) Applied Physics Letters. 78: 416-418. DOI: 10.1063/1.1343848 |
0.677 |
|
| 2001 |
Razeghi M, Slivken SB, Tahraoui A, Matlis A, Park YS. High power 3–12 μm infrared lasers: recent improvements and future trends Physica E-Low-Dimensional Systems & Nanostructures. 11: 233-239. DOI: 10.1016/S1386-9477(01)00210-7 |
0.695 |
|
| 2001 |
Razeghi M, Erdtmann M, Jelen C, Guastavinos F, Brown G, Park Y. Development of quantum well infrared photodetectors at the Center for Quantum Devices Infrared Physics & Technology. 42: 135-148. DOI: 10.1016/S1350-4495(01)00069-X |
0.826 |
|
| 2001 |
Kim S, Razeghi M. Chapter 5 Advances in quantum dot structures Semiconductors and Semimetals. 73: 199-213. DOI: 10.1016/S0080-8784(01)80215-5 |
0.419 |
|
| 2001 |
Sandvik P, Mi K, Shahedipour F, McClintock R, Yasan A, Kung P, Razeghi M. AlxGa1-xN for solar-blind UV detectors Journal of Crystal Growth. 231: 366-370. DOI: 10.1016/S0022-0248(01)01467-1 |
0.823 |
|
| 2001 |
Kim S, Razeghi M. Characteristics of InGaAs/InGaP quantum dot infrared photodetector grown by metal organic chemical vapor deposition Materials Research Society Symposium - Proceedings. 642. |
0.347 |
|
| 2001 |
Razeghi M, Mohseni H. Miniaturisation: Enabling technology for the new millennium Opto-Electronics Review. 9: 101-108. |
0.557 |
|
| 2001 |
Razeghi M, Mohseni H, Brown GJ. Type-II binary superlattices for infrared detector Journal of the Korean Physical Society. 39. |
0.636 |
|
| 2000 |
Razeghi M. Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years Ieee Journal On Selected Topics in Quantum Electronics. 6: 1344-1354. DOI: 10.1109/2944.902188 |
0.341 |
|
| 2000 |
Matlis A, Slivken S, Tahraoui A, Luo KJ, Diaz J, Wu Z, Rybaltowski A, Jelen C, Razeghi M. Low-threshold and high power λ∼9.0 μm quantum cascade lasers operating at room temperature Applied Physics Letters. 77: 1741-1743. DOI: 10.1063/1.1310632 |
0.706 |
|
| 2000 |
Mohseni H, Tahraoui A, Wojkowski J, Razeghi M, Brown GJ, Mitchel WC, Park YS. Very long wavelength infrared type-II detectors operating at 80 K Applied Physics Letters. 77: 1572-1574. DOI: 10.1063/1.1308528 |
0.834 |
|
| 2000 |
Walker D, Kumar V, Mi K, Sandvik P, Kung P, Zhang XH, Razeghi M. Solar-blind AlGaN photodiodes with very low cutoff wavelength Applied Physics Letters. 76: 403-405. DOI: 10.1063/1.125768 |
0.731 |
|
| 2000 |
Lee JJ, Razeghi M. Tl incorporation in InSb and lattice contraction of In1−xTlxSb Applied Physics Letters. 76: 297-299. DOI: 10.1063/1.125765 |
0.322 |
|
| 2000 |
Razeghi M, Sandvik P, Kung P, Walker D, Mi K, Zhang X, Kumar V, Diaz J, Shahedipour F. Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications Materials Science and Engineering: B. 74: 107-112. DOI: 10.1016/S0921-5107(99)00544-9 |
0.698 |
|
| 2000 |
Lane B, Tong S, Diaz J, Wu Z, Razeghi M. High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μm Materials Science and Engineering: B. 74: 52-55. DOI: 10.1016/S0921-5107(99)00533-4 |
0.428 |
|
| 2000 |
RAZEGHI M. ADVANCED SEMICONDUCTOR LASERS IN THE 3-10 μm WAVELENGTH RANGE International Journal of High Speed Electronics and Systems. 10: 355-374. DOI: 10.1016/S0129-1564(00)00037-4 |
0.359 |
|
| 2000 |
Lane B, Razeghi M. High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD Journal of Crystal Growth. 221: 679-682. DOI: 10.1016/S0022-0248(00)00799-5 |
0.413 |
|
| 2000 |
Lee JJ, Razeghi M. Novel Sb-based materials for uncooled infrared photodetector applications Journal of Crystal Growth. 221: 444-449. DOI: 10.1016/S0022-0248(00)00738-7 |
0.437 |
|
| 2000 |
Kung P, Razeghi M. III-Nitride wide bandgap semiconductors: A survey of the current status and future trends of the material and device technology Opto-Electronics Review. 8: 201-239. |
0.553 |
|
| 1999 |
Mohseni H, Wojkowski J, Razeghi M, Brown G, Mitchel W. Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12-μm atmospheric window Ieee Journal of Quantum Electronics. 35: 1041-1044. DOI: 10.1109/3.772173 |
0.84 |
|
| 1999 |
Litvinov VI, Razeghi M. Exciton localization in group-III nitride quantum wells Physical Review B - Condensed Matter and Materials Physics. 59: 9783-9786. DOI: 10.1103/Physrevb.59.9783 |
0.341 |
|
| 1999 |
Hahn DN, Kiehne GT, Ketterson JB, Wong GKL, Kung P, Saxler A, Razeghi M. Phase-matched optical second-harmonic generation in GaN and AlN slab waveguides Journal of Applied Physics. 85: 2497-2501. DOI: 10.1063/1.369611 |
0.561 |
|
| 1999 |
Slivken SB, Litvinov VI, Razeghi M, Meyer JR. Relaxation kinetics in quantum cascade lasers Journal of Applied Physics. 85: 665-671. DOI: 10.1063/1.369200 |
0.68 |
|
| 1999 |
Streltsov AM, Moll KD, Gaeta AL, Kung P, Walker D, Razeghi M. Pulse autocorrelation measurements based on two- and three-photon conductivity in a GaN photodiode Applied Physics Letters. 75: 3778-3780. DOI: 10.1063/1.125453 |
0.685 |
|
| 1999 |
Lane B, Wu Z, Stein A, Diaz J, Razeghi M. InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition Applied Physics Letters. 74: 3438-3440. DOI: 10.1063/1.124120 |
0.436 |
|
| 1999 |
Slivken S, Matlis A, Rybaltowski A, Wu Z, Razeghi M. Low-threshold 7.3 μm quantum cascade lasers grown by gas-source molecular beam epitaxy Applied Physics Letters. 74: 2758-2760. DOI: 10.1063/1.124005 |
0.706 |
|
| 1999 |
Monroy E, Hamilton M, Walker D, Kung P, Sánchez FJ, Razeghi M. High-quality visible-blind AlGaN p-i-n photodiodes Applied Physics Letters. 74: 1171-1173. DOI: 10.1063/1.123960 |
0.695 |
|
| 1999 |
Saxler A, Mitchel WC, Kung P, Razeghi M. Aluminum gallium nitride short-period superlattices doped with magnesium Applied Physics Letters. 74: 2023-2025. DOI: 10.1063/1.123744 |
0.579 |
|
| 1999 |
Wu D, Lane B, Mohseni H, Diaz J, Razeghi M. High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm Applied Physics Letters. 74: 1194-1196. DOI: 10.1063/1.123496 |
0.64 |
|
| 1999 |
Walker D, Monroy E, Kung P, Wu J, Hamilton M, Sanchez FJ, Diaz J, Razeghi M. High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN Applied Physics Letters. 74: 762-764. DOI: 10.1063/1.123303 |
0.72 |
|
| 1999 |
Slivken SB, Matlis A, Jelen C, Rybaltowski A, Diaz J, Razeghi M. High-temperature continuous-wave operation of λ∼8 μm quantum cascade lasers Applied Physics Letters. 74: 173-175. DOI: 10.1063/1.123284 |
0.696 |
|
| 1999 |
Kung P, Walker D, Hamilton M, Diaz J, Razeghi M. Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates Applied Physics Letters. 74: 570-572. DOI: 10.1063/1.123148 |
0.675 |
|
| 1999 |
Lee I, Lee JJ, Kung P, Sanchez FJ, Razeghi M. Band-gap narrowing and potential fluctuation in Si-doped GaN Applied Physics Letters. 74: 102-104. DOI: 10.1063/1.122964 |
0.573 |
|
| 1999 |
Razeghi M. Kinetics of quantum states in quantum cascade lasers: Device design principles and fabrication Microelectronics Journal. 30: 1019-1029. DOI: 10.1016/S0026-2692(99)00055-5 |
0.465 |
|
| 1999 |
Razeghi M. Roadmap of semiconductor infrared lasers and detectors for the 21st century Proceedings of Spie - the International Society For Optical Engineering. 3629: 2-40. |
0.371 |
|
| 1999 |
Razeghi M. High power 3-12 μm laser diodes, recent advances and future trend Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 599-600. |
0.331 |
|
| 1999 |
Razeghi M. Recent advance in semiconductor mid-infrared lasers emitting at 3-12 μm Opto-Electronics Review. 7: 29-58. |
0.391 |
|
| 1999 |
Kim S, Erdtmann M, Razeghi M. Characteristics of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low pressure MOCVD Proceedings of Spie - the International Society For Optical Engineering. 3629: 371-380. |
0.351 |
|
| 1999 |
Kim S, Erdtmann M, Razeghi M. Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetectors Journal of the Korean Physical Society. 35. |
0.363 |
|
| 1998 |
Kung P, Saxler A, Walker D, Rybaltowski A, Zhang X, Diaz J, Razeghi M. GaInN/GaN multi-quantum well laser diodes grown by low-pressure metalorganic chemical vapor deposition Mrs Internet Journal of Nitride Semiconductor Research. 3. DOI: 10.1557/S1092578300000739 |
0.747 |
|
| 1998 |
RAZEGHI M. GaN-BASED LASER DIODES International Journal of High Speed Electronics and Systems. 9: 1007-1080. DOI: 10.1142/S0129156498000415 |
0.46 |
|
| 1998 |
Wang L, Wu SL, Liu Y, Ning Y, Diaz JE, Eliashevich I, Yi HJ, Razeghi M. Investigation of 980-nm GaInAs/GaAs/GaInP QW high-power lasers Proceedings of Spie. 3547: 102-104. DOI: 10.1117/12.319596 |
0.484 |
|
| 1998 |
Razeghi M. Critical issues in commercially viable semiconductor lasers Proceedings of Spie - the International Society For Optical Engineering. 3285: 10-17. DOI: 10.1117/12.307610 |
0.362 |
|
| 1998 |
Mohseni H, Michel E, Razeghi M, Mitchel W, Brown G. Growth and characterization of InAs/GaSb type II superlattices for long-wavelength infrared detectors Proceedings of Spie - the International Society For Optical Engineering. 3287: 30-37. DOI: 10.1117/12.304497 |
0.637 |
|
| 1998 |
Lee HJ, Cheong MG, Suh EK, Razeghi M. Electrical transport properties of highly doped N-type GaN epilayers Proceedings of Spie - the International Society For Optical Engineering. 3287: 321-326. DOI: 10.1117/12.304496 |
0.346 |
|
| 1998 |
Lee JJ, Razeghi M. Investigation of novel InTlSb and InSbBi alloys for uncooled photodetector applications Proceedings of Spie - the International Society For Optical Engineering. 3287: 256-261. DOI: 10.1117/12.304489 |
0.417 |
|
| 1998 |
Kung P, Zhang X, Walker D, Saxler AW, Razeghi M. GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio High-Power Lasers and Applications. 3287: 214-220. DOI: 10.1117/12.304484 |
0.71 |
|
| 1998 |
Jelen CL, Slivken S, David T, Brown GJ, Razeghi M. Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors High-Power Lasers and Applications. 3287: 96-104. DOI: 10.1117/12.304470 |
0.675 |
|
| 1998 |
Rogalski A, Razeghi M. Narrow gap semiconductor photodiodes Proceedings of Spie - the International Society For Optical Engineering. 3287: 2-13. DOI: 10.1117/12.304467 |
0.327 |
|
| 1998 |
Razeghi M, Saxler A, Kung P, Walker D, Zhang X, Rybaltowski A, Xiao Y, Yi H, Diaz J. Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 3284: 113-121. DOI: 10.1117/12.304463 |
0.735 |
|
| 1998 |
Slivken S, Razeghi M. 8.5 μm room temperature quantum cascade lasers grown by gas-source molecular beam epitaxy Proceedings of Spie - the International Society For Optical Engineering. 3278: 314-321. DOI: 10.1117/12.298215 |
0.699 |
|
| 1998 |
Jelen C, Slivken S, Guzman V, Razeghi M, Brown G. InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths Ieee Journal of Quantum Electronics. 34: 1873-1876. DOI: 10.1109/3.720221 |
0.648 |
|
| 1998 |
Jelen C, Slivken S, David T, Razeghi M, Brown G. Noise performance of InGaAs-InP quantum-well infrared photodetectors Ieee Journal of Quantum Electronics. 34: 1124-1128. DOI: 10.1109/3.687853 |
0.634 |
|
| 1998 |
Mohseni H, Litvinov VI, Razeghi M. Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices Physical Review B - Condensed Matter and Materials Physics. 58: 15378-15380. DOI: 10.1103/Physrevb.58.15378 |
0.591 |
|
| 1998 |
Kim S, Mohseni H, Erdtmann M, Michel E, Jelen C, Razeghi M. Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector Applied Physics Letters. 73: 963-965. DOI: 10.1063/1.122053 |
0.833 |
|
| 1998 |
Lee JJ, Kim JD, Razeghi M. Room temperature operation of 8-12 μm InSbBi infrared photodetectors on GaAs substrates Applied Physics Letters. 73: 602-604. DOI: 10.1063/1.121869 |
0.439 |
|
| 1998 |
Walker D, Saxler A, Kung P, Zhang X, Hamilton M, Diaz J, Razeghi M. Visible blind GaN p-i-n photodiodes Applied Physics Letters. 72: 3303-3305. DOI: 10.1063/1.121631 |
0.695 |
|
| 1998 |
Kato T, Kung P, Saxler A, Sun C, Ohsato H, Razeghi M, Okuda T. Simultaneous growth of two differently oriented GaN epilayers on (1 1 · 0) sapphire II. A growth model of (0 0 · 1) and (10 · 0) GaN Journal of Crystal Growth. 183: 131-139. DOI: 10.1016/S0022-0248(97)00364-3 |
0.548 |
|
| 1998 |
Razeghi M. Infrared photodetectors and imaging arrays using advanced III-V materials Proceedings of Spie - the International Society For Optical Engineering. 3316: 746-753. |
0.3 |
|
| 1998 |
Razeghi M, Yi H. High-power Al-free InGaAsP/GaAs near-infrared semiconductor lasers Opto-Electronics Review. 1998: 81-92. |
0.353 |
|
| 1998 |
Kim JD, Razeghi M. Investigation of InAsSb infrared photodetectors for near room temperature operation Opto-Electronics Review. 1998: 217-230. |
0.373 |
|
| 1998 |
Lee JJ, Razeghi M. Exploration of InSbBi for uncooled long-wavelength infrared photodetectors Opto-Electronics Review. 1998: 25-36. |
0.344 |
|
| 1997 |
Kim S, Erdtmann M, Razeghi M. The long wavelength luminescence observation from the self-organized InGaAs quantum dots grown on (100) GaAs substrate by metalorganic chemical vapor deposition Materials Science Forum. 258: 1643-1652. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.1643 |
0.811 |
|
| 1997 |
Erdtmann M, Kim S, Razeghi M. Localized epitaxy for vertical cavity surface emitting laser applications Materials Science Forum. 258: 1637-1642. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.1637 |
0.785 |
|
| 1997 |
Saxler AW, Kim KS, Walker D, Kung P, Zhang XR, Brown GJ, Mitchel WC, Razeghi M. Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN Materials Science Forum. 1229-1234. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.1229 |
0.7 |
|
| 1997 |
Saxler AW, Kung P, Zhang XR, Walker D, Solomon J, Ahoujja M, Mitchel WC, Vydyanath HR, Razeghi M. GaN Doped with Sulfur Materials Science Forum. 1161-1166. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.1161 |
0.682 |
|
| 1997 |
Saxler AW, Kung P, Zhang XR, Walker D, Solomon J, Mitchel WC, Razeghi M. GaN Grown Using Trimethylgallium and Triethylgallium Materials Science Forum. 1081-1086. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.1081 |
0.71 |
|
| 1997 |
Dovidenko K, Oktyabrsky S, Narayan J, Joshkin V, Razeghi M. Comparative Study of Typical Defects in III-Nitride Thin Films and Their Alloys Mrs Proceedings. 482. DOI: 10.1557/Proc-482-411 |
0.311 |
|
| 1997 |
Razeghi M, Diaz JE, Yi HJ, Wu D, Lane B, Rybaltowski A, Xiao YH, Jeon H. High-power InAsSb/InAsSbP laser diodes emitting at 3-5 μm range Proceedings of Spie - the International Society For Optical Engineering. 2997: 14-24. DOI: 10.1117/12.264148 |
0.397 |
|
| 1997 |
Wu D, Kaas E, Diaz J, Lane B, Rybaltowski A, Yi HJ, Razeghi M. InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 μm grown by metal-organic chemical vapor deposition Ieee Photonics Technology Letters. 9: 173-175. DOI: 10.1109/68.553081 |
0.479 |
|
| 1997 |
Pan W, Shahar D, Tsui DC, Wei HP, Razeghi M. Quantum Hall liquid-to-insulator transition inIn1−xGaxAs/InPt heterostructures Physical Review B. 55: 15431-15433. DOI: 10.1103/Physrevb.55.15431 |
0.323 |
|
| 1997 |
Besikci C, Civan Y, Ozder S, Sen O, Jelen C, Slivken SB, Razeghi M. Gas source molecular beam epitaxy growth and characterization of modulation-doped field-effect transistor structures Semiconductor Science and Technology. 12: 1472-1478. DOI: 10.1088/0268-1242/12/11/025 |
0.645 |
|
| 1997 |
Lee JJ, Kim JD, Razeghi M. Long-wavelength infrared photodetectors based on InSbBi grown on GaAs substrates Applied Physics Letters. 71: 2298-2300. DOI: 10.1063/1.120429 |
0.47 |
|
| 1997 |
Saxler A, Walker D, Kung P, Zhang X, Razeghi M, Solomon J, Mitchel WC, Vydyanath HR. Comparison of trimethylgallium and triethylgallium for the growth of GaN Applied Physics Letters. 71: 3272-3274. DOI: 10.1063/1.120310 |
0.681 |
|
| 1997 |
Rybaltowski A, Xiao Y, Wu D, Lane B, Yi H, Feng H, Diaz J, Razeghi M. High power InAsSb/InPAsSb/InAs mid-infrared lasers Applied Physics Letters. 71: 2430-2432. DOI: 10.1063/1.120082 |
0.419 |
|
| 1997 |
Mohseni H, Michel E, Sandoen J, Razeghi M, Mitchel W, Brown G. Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range Applied Physics Letters. 71: 1403-1405. DOI: 10.1063/1.119906 |
0.626 |
|
| 1997 |
Michel E, Mohseni H, Kim JD, Wojkowski J, Sandven J, Xu J, Razeghi M, Bredthauer R, Vu P, Mitchel W, Ahoujja M. High carrier lifetime InSb grown on GaAs substrates Applied Physics Letters. 71: 1071-1073. DOI: 10.1063/1.119731 |
0.822 |
|
| 1997 |
Lee JK, Cho YH, Choe BD, Kim KS, Jeon HI, Lim H, Razeghi M. Schottky barrier heights and conduction-band offsets of In1−xGaxAs1−yPy lattice matched to GaAs Applied Physics Letters. 71: 912-914. DOI: 10.1063/1.119686 |
0.469 |
|
| 1997 |
Kim KS, Saxler A, Kung P, Razeghi M, Lim KY. Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition Applied Physics Letters. 71: 800-802. DOI: 10.1063/1.119650 |
0.567 |
|
| 1997 |
Diaz J, Yi HJ, Razeghi M, Burnham GT. Long-term reliability of Al-free InGaAsP/GaAs (λ=808 nm) lasers at high-power high-temperature operation Applied Physics Letters. 71: 3042-3044. DOI: 10.1063/1.119431 |
0.407 |
|
| 1997 |
Slivken SB, Jelen C, Rybaltowski A, Diaz J, Razeghi M. Gas-source molecular beam epitaxy growth of an 8.5 μm quantum cascade laser Applied Physics Letters. 71: 2593-2595. DOI: 10.1063/1.119338 |
0.691 |
|
| 1997 |
Diaz J, Yi H, Rybaltowski A, Lane B, Lukas G, Wu D, Kim S, Erdtmann M, Kaas E, Razeghi M. InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal-organic chemical-vapor deposition Applied Physics Letters. 70: 40-42. DOI: 10.1063/1.119298 |
0.812 |
|
| 1997 |
Lee JJ, Kim JD, Razeghi M. Growth and characterization of InSbBi for long wavelength infrared photodetectors Applied Physics Letters. 70: 3266-3268. DOI: 10.1063/1.119158 |
0.349 |
|
| 1997 |
Yi H, Rybaltowski A, Diaz J, Wu D, Lane B, Xiao Y, Razeghi M. Stability of far fields in double heterostructure and multiple quantum well InAsSb/lnPAsSb/lnAs midinfrared lasers Applied Physics Letters. 70: 3236-3238. DOI: 10.1063/1.119135 |
0.399 |
|
| 1997 |
Lane B, Wu D, Yi HJ, Diaz J, Rybaltowski A, Kim S, Erdtmann M, Jeon H, Razeghi M. Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure Applied Physics Letters. 70: 1447-1449. DOI: 10.1063/1.118559 |
0.788 |
|
| 1997 |
Walker D, Zhang X, Saxler A, Kung P, Xu J, Razeghi M. AlxGa1−xN (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition Applied Physics Letters. 70: 949-951. DOI: 10.1063/1.118450 |
0.679 |
|
| 1997 |
Jelen C, Slivken S, Hoff J, Razeghi M, Brown GJ. Aluminum free GaInP/GaAs quantum well infrared photodetectors for long wavelength detection Applied Physics Letters. 70: 360-362. DOI: 10.1063/1.118390 |
0.694 |
|
| 1997 |
Lane B, Wu D, Rybaltowski A, Yi H, Diaz J, Razeghi M. Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition Applied Physics Letters. 70: 443-445. DOI: 10.1063/1.118176 |
0.48 |
|
| 1997 |
Razeghi M. The center for quantum devices - Extending the scope of photonics Iii-Vs Review. 10: 36-43. DOI: 10.1016/S0961-1290(97)82542-2 |
0.358 |
|
| 1997 |
Kung P, Zhang X, Saxler A, Walker D, Razeghi M, Qian W, Dravid V. MOCVD growth of high quality GaNAlGaN based structures on Al2O3 substrates with dislocation density less than 107cm− 2 Journal of the European Ceramic Society. 17: 1781-1785. DOI: 10.1016/S0955-2219(97)00076-9 |
0.687 |
|
| 1997 |
Kato T, Kung P, Saxler A, Sun C, Ohsato H, Razeghi M, Okuda T. Morphology of twinned GaN grown on (11·0) sapphire substrates Solid-State Electronics. 41: 227-229. DOI: 10.1016/S0038-1101(96)00205-5 |
0.554 |
|
| 1997 |
Kato T, Ohsato H, Okuda T, Kung P, Saxler A, Sun C, Razeghi M. Simultaneous growth of two different oriented GaN epilayers on (1 1 · 0) sapphire I. Morphology and orientation Journal of Crystal Growth. 173: 244-248. DOI: 10.1016/S0022-0248(96)00908-6 |
0.546 |
|
| 1996 |
Elhamri S, Ahoujja M, Newrock RS, Mast DB, Herbert ST, Mitchel WC, Razeghi M. Electrical properties of undoped GaxIn1-xP/GaAs quantum wells. Physical Review. B, Condensed Matter. 54: 10688-10695. PMID 9984865 DOI: 10.1103/Physrevb.54.10688 |
0.36 |
|
| 1996 |
Zhang X, Walker D, Saxler A, Kung P, Xu J, Razeghi M. Demonstration of an Electronic Grade Ti/AlN/Si Metal-Insulator-Semiconductor Capacitor The Japan Society of Applied Physics. 1996: 230-232. DOI: 10.7567/Ssdm.1996.C-2-4 |
0.658 |
|
| 1996 |
Michel E, Mohseni H, Wojkowski J, Sandven J, Xu J, Razeghi M, Vu P, Bredthauer R, Mitchel W, Ahoujja M. InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al203 Substrates Mrs Proceedings. 450. DOI: 10.1557/Proc-450-79 |
0.822 |
|
| 1996 |
Jelen C, Slivken S, Brown GJ, Razeghi M. GaAs/GaInP Quantum Well Intersubband Photodetectors for Focal Plane Array Infrared Imaging Mrs Proceedings. 450. DOI: 10.1557/Proc-450-195 |
0.698 |
|
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