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Hao Meng, Ph.D. - Publications

Affiliations: 
2007 University of Minnesota, Twin Cities, Minneapolis, MN 
Area:
Electronics and Electrical Engineering
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26 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Liu M, Du W, Su H, Liu B, Meng H, Tang XL. A voltage-pulse-modulated giant magnetoresistance switch with four flexible sensing ranges. Nanotechnology. PMID 34479216 DOI: 10.1088/1361-6528/ac2392  0.302
2016 Meng H, Wu J, Wu X, Ren M, Ren Y. Long-range superharmonic Josephson current and spin-triplet pairing correlations in a junction with ferromagnetic bilayers. Scientific Reports. 6: 21308. PMID 26892755 DOI: 10.1038/srep21308  0.386
2015 Han G, Meng H, Huang J, Naik VB, Sim CH, Tran M, Lim ST. Perspectives of electric field controlled switching in perpendicular magnetic random access Ieee Transactions On Magnetics. 51. DOI: 10.1109/Tmag.2014.2354452  0.486
2014 Meng H, Naik VB, Liu R, Han G. Erratum: “Electric field control of spin re-orientation in perpendicular magnetic tunnel junctions—CoFeB and MgO thickness dependence” [Appl. Phys. Lett. 105, 042410 (2014)] Applied Physics Letters. 105: 189901. DOI: 10.1063/1.4901086  0.419
2014 Naik VB, Meng H, Xiao JX, Liu RS, Kumar A, Zeng KY, Luo P, Yap S. Effect of electric-field on the perpendicular magnetic anisotropy and strain properties in CoFeB/MgO magnetic tunnel junctions Applied Physics Letters. 105. DOI: 10.1063/1.4892410  0.353
2014 Meng H, Naik VB, Liu R, Han G. Electric field control of spin re-orientation in perpendicular magnetic tunnel junctions - CoFeB and MgO thickness dependence Applied Physics Letters. 105. DOI: 10.1063/1.4891843  0.464
2014 Naik VB, Meng H, Liu RS, Luo P, Yap S, Han GC. Electric-field tunable magnetic-field-sensor based on CoFeB/MgO magnetic tunnel junction Applied Physics Letters. 104. DOI: 10.1063/1.4882178  0.385
2013 Meng H, Naik VB, Sbiaa R. Tuning of perpendicular exchange bias for magnetic memory applications Physica Status Solidi (a). 210: 391-394. DOI: 10.1002/Pssa.201228487  0.411
2012 Wu G, Khoo KH, Jhon MH, Meng H, Lua SYH, Sbiaa R, Gan CK. First-principles calculations of the magnetic anisotropic constants of Co-Pd multilayers: Effect of stacking faults Epl. 99. DOI: 10.1209/0295-5075/99/17001  0.382
2012 Naik VB, Meng H, Sbiaa R. Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction Aip Advances. 2: 42182. DOI: 10.1063/1.4771996  0.452
2012 Meng H, Sbiaa R, Akhtar MAK, Liu RS, Naik VB, Wang CC. Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy Applied Physics Letters. 100: 122405. DOI: 10.1063/1.3695168  0.44
2011 Guo J, Tan SG, Jalil MBA, Eason K, Lua SYH, Rachid S, Meng H. MRAM device incorporating single-layer switching via rashba-induced spin torque Ieee Transactions On Magnetics. 47: 3868-3871. DOI: 10.1109/Tmag.2011.2158634  0.496
2011 Meng H, Sbiaa R, Lua SYH, Wang CC, Akhtar MAK, Wong SK, Luo P, Carlberg CJP, Ang KSA. Low current density induced spin-transfer torque switching in CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/40/405001  0.462
2011 Meng H, Sbiaa R, Wang CC, Lua SYH, Akhtar MAK. Annealing temperature window for tunneling magnetoresistance and spin torque switching in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junctions Journal of Applied Physics. 110: 103915. DOI: 10.1063/1.3662893  0.502
2011 Meng H, Lum WH, Sbiaa R, Lua SYH, Tan HK. Annealing effects on CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy Journal of Applied Physics. 110: 33904. DOI: 10.1063/1.3611426  0.379
2011 Sbiaa R, Lua SYH, Law R, Meng H, Lye R, Tan HK. Reduction of switching current by spin transfer torque effect in perpendicular anisotropy magnetoresistive devices (invited) Journal of Applied Physics. 109. DOI: 10.1063/1.3540361  0.463
2008 Yao X, Meng H, Zhang Y, Wang J. Improved current switching symmetry of magnetic tunneling junction and giant magnetoresistance devices with nano-current-channel structure Journal of Applied Physics. 103. DOI: 10.1063/1.2837485  0.66
2007 Meng H, Wang J. Asymmetric Spin Torque Transfer in Nano GMR Device With Perpendicular Anisotropy Ieee Transactions On Magnetics. 43: 2833-2835. DOI: 10.1109/Tmag.2007.893528  0.567
2006 Meng H, Wang JP. Composite free layer for high density magnetic random access memory with lower spin transfer current Applied Physics Letters. 89: 152509. DOI: 10.1063/1.2361280  0.433
2006 Meng H, Wang JP. Spin transfer in nanomagnetic devices with perpendicular anisotropy Applied Physics Letters. 88: 172506-172508. DOI: 10.1063/1.2198797  0.535
2006 Meng H, Wang J, Wang J. Low critical current for spin transfer in magnetic tunnel junctions Applied Physics Letters. 88: 082504. DOI: 10.1063/1.2179124  0.579
2005 Meng H, Wang J. Spin transfer effect in magnetic tunnel junction with a nano-current-channel Layer in free layer Ieee Transactions On Magnetics. 41: 2612-2614. DOI: 10.1109/Tmag.2005.855348  0.573
2005 Meng H, Wang J, Wang J. A spintronics full adder for magnetic CPU Ieee Electron Device Letters. 26: 360-362. DOI: 10.1109/Led.2005.848129  0.516
2005 Wang J, Meng H, Wang J. Programmable spintronics logic device based on a magnetic tunnel junction element Journal of Applied Physics. 97. DOI: 10.1063/1.1857655  0.511
2005 Meng H, Wang J, Diao Z, Wang JP. Low resistance spin-dependent magnetic tunnel junction with high breakdown voltage for current-induced-magnetization-switching devices Journal of Applied Physics. 97. DOI: 10.1063/1.1857651  0.555
2005 Ding Y, Pakala M, Nguyen P, Meng H, Huai Y, Wang JP. Fabrication of current-induced magnetization switching devices using etch-back planarization process Journal of Applied Physics. 97. DOI: 10.1063/1.1847971  0.467
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