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Lingquan Wang, Ph.D. - Publications

Affiliations: 
2009 Electrical Engineering (Applied Physics) University of California, San Diego, La Jolla, CA 
Area:
Electronics and Electrical Engineering
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Lu W, Wang L, Gu S, Aplin DPR, Estrada DM, Yu PKL, Asbeck PM. Analysis of Reverse Leakage Current and Breakdown Voltage in GaN and InGaN/GaN Schottky Barriers Ieee Transactions On Electron Devices. 58: 1986-1994. DOI: 10.1109/Ted.2011.2146254  0.536
2011 Yuan Y, Wang L, Yu B, Shin B, Ahn J, McIntyre PC, Asbeck PM, Rodwell MJW, Taur Y. A distributed model for border traps in Al2O3 - InGaAs MOS devices Ieee Electron Device Letters. 32: 485-487. DOI: 10.1109/Led.2011.2105241  0.498
2010 Lee KM, Wang L, Asbeck PM, Moon JS. Analysis of resistance asymmetry due to p-n junctions in graphene FETs Materials Research Society Symposium Proceedings. 1259: 23-28. DOI: 10.1557/Proc-1259-S08-04  0.461
2010 Asbeck PM, Wang L, Gu S, Taur Y, Yu ET. Tunneling MOSFETs based on III-V staggered heterojunctions Materials Research Society Symposium Proceedings. 1252: 3-9. DOI: 10.1557/Proc-1252-I02-04  0.542
2010 Lu W, Wang L, Gu S, Aplin DPR, Estrada DM, Yu PKL, Asbeck PM. InGaN/GaN Schottky Diodes With Enhanced Voltage Handling Capability for Varactor Applications Ieee Electron Device Letters. 31: 1119-1121. DOI: 10.1109/Led.2010.2058843  0.547
2010 Wang L, Yu E, Taur Y, Asbeck P. Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications Ieee Electron Device Letters. 31: 431-433. DOI: 10.1109/Led.2010.2044012  0.516
2010 Kim EJ, Wang L, Asbeck PM, Saraswat KC, McIntyre PC. Border traps in Al2 O3 / In0.53 Ga 0.47 As (100) gate stacks and their passivation by hydrogen anneals Applied Physics Letters. 96. DOI: 10.1063/1.3281027  0.505
2010 Wang L, Asbeck PM, Taur Y. Self-consistent 1-D Schrödinger-Poisson solver for III-V heterostructures accounting for conduction band non-parabolicity Solid-State Electronics. 54: 1257-1262. DOI: 10.1016/J.Sse.2010.06.018  0.518
2009 Passlack M, Droopad R, Fejes P, Wang L. Electrical Properties of $\hbox{Ga}_{2}\hbox{O}_{3}/ \hbox{GaAs}$ Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs Ieee Electron Device Letters. 30: 2-4. DOI: 10.1109/Led.2008.2007579  0.377
2008 Yu B, Wang L, Yuan Y, Asbeck PM, Taur Y. Scaling of nanowire transistors Ieee Transactions On Electron Devices. 55: 2846-2858. DOI: 10.1109/Ted.2008.2005163  0.516
2006 Wang L, Wang D, Asbeck PM. A numerical Schrödinger-Poisson solver for radially symmetric nanowire core-shell structures Solid-State Electronics. 50: 1732-1739. DOI: 10.1016/J.Sse.2006.09.013  0.494
2004 Neugroschel A, Wang L, Bersuker G. Trapped charge induced gate oxide breakdown Journal of Applied Physics. 96: 3388-3398. DOI: 10.1063/1.1781766  0.343
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